Patents by Inventor WEN-SHUO LIU

WEN-SHUO LIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250048678
    Abstract: A semiconductor device includes plurality of fin structures extending in first direction on semiconductor substrate. Fin structure's lower portion is embedded in first insulating layer. First gate electrode and second gate electrode structures extend in second direction substantially perpendicular to first direction over of fin structures and first insulating layer. The first and second gate electrode structures are spaced apart and extend along line in same direction. First and second insulating sidewall spacers are arranged on opposing sides of first and second gate electrode structures. Each of first and second insulating sidewall spacers contiguously extend along second direction. A second insulating layer is in region between first and second gate electrode structures. The second insulating layer separates first and second gate electrode structures. A third insulating layer is in region between first and second gate electrode structures.
    Type: Application
    Filed: October 21, 2024
    Publication date: February 6, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Han LIN, Shih-Chang TSAI, Wen-Shuo HSIEH, Te-Yung LIU
  • Patent number: 11683060
    Abstract: A radio frequency circuit with font routing to replace a resistor includes a routing layer and a ground layer. The routing layer includes a first pad, a second pad and a font routing unit. The second pad is corresponding to the first pad. The font routing unit is connected between the first pad and the second pad, and has a trace width. The trace width is less than a 50 ohm trace width. The ground layer is disposed below the routing layer and is separated from the routing layer by a height. The font routing unit has a second equivalent impedance at the radio frequency, the second equivalent impedance is determined according to the trace width, the height and the radio frequency, and the second equivalent impedance is the same or similar to a first equivalent impedance.
    Type: Grant
    Filed: January 25, 2022
    Date of Patent: June 20, 2023
    Assignee: USI Science and Technology (Shenzhen) Co., Ltd.
    Inventors: Wen-Shuo Liu, Ji-Min Lin, Syuan-Ci Lin, Yu-An Hsieh
  • Publication number: 20230126592
    Abstract: A radio frequency circuit with font routing to replace a resistor includes a routing layer and a ground layer. The routing layer includes a first pad, a second pad and a font routing unit. The second pad is corresponding to the first pad. The font routing unit is connected between the first pad and the second pad, and has a trace width. The trace width is less than a 50 ohm trace width. The ground layer is disposed below the routing layer and is separated from the routing layer by a height. The font routing unit has a second equivalent impedance at the radio frequency, the second equivalent impedance is determined according to the trace width, the height and the radio frequency, and the second equivalent impedance is the same or similar to a first equivalent impedance.
    Type: Application
    Filed: January 25, 2022
    Publication date: April 27, 2023
    Inventors: WEN-SHUO LIU, Ji-Min Lin, Syuan-CI Lin, Yu-An Hsieh