Abstract: A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.

Abstract: A manufacturing process of a vertical type solid state light emitting device is provided. A substrate is provided. M metal nitride buffer layer is formed on the substrate, and a breakable structure containing M metal droplet structures is formed on the buffer layer. A first type semiconductor layer, an active layer and a second type semiconductor layer are sequentially formed on the breakable structure. A second type electrode is formed on the second type semiconductor layer. The first type semiconductor layer, the active layer, the second type semiconductor layer and the second type electrode are stacked to form a light emitting stacking structure. The breakable structure is damaged to separate from the light emitting stacking structure, so that a surface of the first type semiconductor layer of the light emitting stacking structure is exposed. A first type electrode is formed on the surface of the first type semiconductor layer.

Abstract: A method for making a solid state light emitting device includes: (a) forming a first cladding layer on a substrate; (b) forming a matrix layer above the first cladding layer, the matrix layer having a top surface and being formed with a plurality of isolated spaces; (c) epitaxially forming a quantum cluster in each of the spaces such that the top surface of the matrix layer and top surfaces of the quantum clusters cooperatively define a coplanar surface, the quantum clusters cooperating with the matrix layer to form a light emitting layer; (d) forming a second cladding layer on the light emitting layer; and (e) forming an electrode unit electrically connected to the first and second cladding layers.