Abstract: A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Abstract: A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

Abstract: The present invention provides a photomask comprising a substrate and a plurality of shielding patterns. The substrate comprising a plurality of shielding regions and a plurality of transparent regions, while each transparent region is disposed between two adjacent shielding regions and has one depression. The depression and the shielding region share a same edge and a sidewall of the depression is aligned with a sidewall of the shielding pattern.

Abstract: A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

Abstract: A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Abstract: The present invention relates to a photolithography process using hybrid chromeless phase shift masks. A mask having a gate pattern formed on a base plate is provided. A 180-degree shifter layer is formed at critical dimension locations of the base plate. The mask of the present invention can be used for transferring the gate pattern to a photoresist layer in the exposure process.

Abstract: The method includes performing phase shift mask correction to the main feature through the wafer. The method utilized an assistant feature such as a mixed of chromeless pattern and chrome pattern to correct the pattern. In one case, the assistant feature with chrome utilized to correct the feature pattern to simplify the CAD manufacturing. On the other hand, the feature pattern with chrome is used to replace the feature pattern with chromeless to correct the pattern with large critical dimensional such that the small chromeless pattern will not be used during the mask manufacturing and the occurring probability of defect will be improved.