Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a stack of semiconductor layers comprising a plurality of first semiconductor layers and a plurality of second semiconductor layers over a semiconductor substrate. A first stack of masking layers is formed over the stack of semiconductor layers with a first width and a second stack of masking layers is formed laterally offset from the stack of semiconductor layers with a second width less than the first width. A patterning process is performed on the semiconductor substrate and the stack of semiconductor layers, thereby defining a first fin structure laterally adjacent to a second fin structure. The first fin structure has the first width and the second fin structure has the second width. The stack of semiconductor layers directly overlies the first fin structure and has the first width.

Abstract: A semiconductor transistor device includes a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The gate structure wraps around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are disposed on opposite endings of the channel structure. The gate contact is disposed on the gate structure. The back-side source/drain contact is disposed under the first source/drain epitaxial structure. The first source/drain epitaxial structure has a concave bottom surface contacting the back-side source/drain contact.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.

Abstract: A method for in vitro activation and/or expansion of immune cells is provided, including the steps of: a) providing magnetic particles having multi-protrusive surface modified with at least one type of immuno-inducing substance, in which each magnetic particle includes a copolymer core, a polymer layer, a magnetic substance layer, and a silicon-based layer from the inside to the outside; b) providing a cell solution including at least one type of immune cell in the cell solution; and c) bringing the magnetic particles in contact with the cell solution, in which the at least one type of immuno-inducing substance on the surface of the magnetic particle activates and/or expands the at least one type of immune cell in the cell solution.

Abstract: A detection method of multiple analytes includes the following. A microparticle is provided. The microparticle is coupled with at least one first ligand, and includes a body and a plurality of first protrusions formed on a surface of the body. Next, the microparticle is mixed with a variety of analytes to form a first complex. Thereafter, the first complex is mixed with a variety of second ligands carrying a variety of first labels, such that the variety of second ligands bind to the variety of analytes in the first complex and form a second complex. Lastly, the variety of first labels in the variety of second ligands in the second complex are detected.

Abstract: A method for in vitro activation and/or expansion of immune cells is provided, including the steps of: a) providing magnetic particles having multi-protrusive surface modified with at least one type of immuno-inducing substance, in which each magnetic particle includes a copolymer core, a polymer layer, a magnetic substance layer, and a silicon-based layer from the inside to the outside; b) providing a cell solution including at least one type of immune cell in the cell solution; and c) bringing the magnetic particles in contact with the cell solution, in which the at least one type of immuno-inducing substance on the surface of the magnetic particle activates and/or expands the at least one type of immune cell in the cell solution.

Abstract: A static image presentation method is disclosed. The static image mentioned above has as least one human face pattern. The static image presentation method includes: firstly, identifying the human face pattern on the static image to obtain a human face pattern center and a human face pattern range; and then, presenting the static image by zooming in the static image according to the human face pattern center and the human face pattern range.