Patents by Inventor Wen-Ting Chung-Shi

Wen-Ting Chung-Shi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ONE TRANSISTOR AND ONE RESISTIVE (1T1R) RANDOM ACCESS MEMORY (RAM) STRUCTURE WITH DUAL SPACERS
    Publication number: 20150147864
    Abstract: The present disclosure provides methods of making resistive random access memory (RRAM) cells. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer on the bottom electrode having a width that is same as a width of the top portion of the bottom electrode; a capping layer over the bottom electrode, a first spacer surrounding the capping layer and a top electrode, a second spacer surround the top portion of the bottom electrode and the first spacer, and the top electrode. The RRAM cell further includes a conductive material connecting the top electrode of the RRAM structure to a metal layer.
    Type: Application
    Filed: January 28, 2015
    Publication date: May 28, 2015
    Inventors: Yu-Wen Liao, Wen-Ting Chung-Shi, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang, Hsia-Wei Chen, Ching-Pei Hsieh