Patents by Inventor Wen-Tsang Chen

Wen-Tsang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Surface treatment process for enhancing a release rate of metal ions from a sacrificial electrode and a related sacrificial electrode
    Patent number: 7118665
    Abstract: The present invention discloses a surface treatment process for enhancing both the release rate of metal ions from a sacrificial electrode, and the working life of the electrode. A high density of micro pores are formed on the surface of the sacrificial electrode. Chlorine ions are then implanted into the pores. The chlorine ions prevent a passive film from forming on the sacrificial electrode during use, in which an electric current flows through the sacrificial electrode.
    Type: Grant
    Filed: March 1, 2004
    Date of Patent: October 10, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Kon-Tsu Kin, Hong-Shiang Tang, Shu-Fei Chan, Wen-Tsang Chen
  • Method and system for treating wastewater containing hydrogen peroxide
    Publication number: 20060201882
    Abstract: The present invention provides an improvement for H2O2-containing wastewater treatment, wherein activated carbon for reducing the hydrogen peroxide content in the wastewater has an enhanced efficiency and a longer useful lifetime. The method of the present invention monitors a pH value of the H2O2-containing wastewater, and adjusts the pH value to 4 or higher by adding a base, when the pH is lower than 4, prior to causing the wastewater to contact activated carbon.
    Type: Application
    Filed: March 10, 2005
    Publication date: September 14, 2006
    Applicant: Industrial Technology Research Institute
    Inventors: Hsiao-Yu Chen, Kon-Tsu Kin, Hong-Shiang Tang, Wen-Tsang Chen
  • Surface treatment process for enhancing a release rate of metal ions from a sacrificial electrode and a related sacrificial electrode
    Publication number: 20050126918
    Abstract: The present invention discloses a surface treatment process for enhancing both the release rate of metal ions from a sacrificial electrode, and the working life of the electrode. A high density of micro pores are formed on the surface of the sacrificial electrode. Chlorine ions are then implanted into the pores. The chlorine ions prevent a passive film from forming on the sacrificial electrode during use, in which an electric current flows through the sacrificial electrode.
    Type: Application
    Filed: March 1, 2004
    Publication date: June 16, 2005
    Applicant: Industrial Technology Research Institute
    Inventors: Kon-Tsu Kin, Hong-Shiang Tang, Shu-Fei Chan, Wen-Tsang Chen