Patents by Inventor Wen-Tsung Tseng
Wen-Tsung Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10199341Abstract: Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.Type: GrantFiled: August 1, 2016Date of Patent: February 5, 2019Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Fang-Yu Liang, Hung-Hsien Chang, Yi-Che Lai, Wen-Tsung Tseng, Chen-Yu Huang
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Patent number: 10049975Abstract: A substrate structure is provided, including a substrate body having a conductive pad, an insulation layer formed on the substrate body and exposing the conductive pad, a conductive pillar disposed on the conductive pad, and a metal pad disposed on the insulation layer and electrically connected to the conductive pillar. A conductive component can be coupled to the metal pad. During a high-temperature process, the conductive pillar and the metal pad disperse the remaining stress generated due to heat, thereby preventing the conductive component from being cracked.Type: GrantFiled: September 7, 2016Date of Patent: August 14, 2018Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Fang-Yu Liang, Hung-Hsien Chang, Yi-Che Lai, Wen-Tsung Tseng, Chen-Yu Huang
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Patent number: 9899308Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurrence of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.Type: GrantFiled: February 16, 2017Date of Patent: February 20, 2018Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Wen-Tsung Tseng, Yi-Che Lai, Shih-Kuang Chiu, Mao-Hua Yeh
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Publication number: 20170317040Abstract: Provided is a substrate structure, including: a substrate body having a conductive contact; an insulating layer formed on the substrate body with the conductive contact exposed therefrom; and an insulating protection layer formed on a portion of a surface of the insulating layer, and having a plurality of openings corresponding to the conductive contact, wherein at least one of the openings is disposed at an outer periphery of the conductive contact. Accordingly, the insulating protection layer uses the openings to dissipate and disperse residual stresses in a manufacturing process of high operating temperatures.Type: ApplicationFiled: August 1, 2016Publication date: November 2, 2017Inventors: Fang-Yu Liang, Hung-Hsien Chang, Yi-Che Lai, Wen-Tsung Tseng, Chen-Yu Huang
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Publication number: 20170311445Abstract: A substrate structure is provided, which includes a substrate having a plurality of conductors and at least a receiving space formed on a surface of the substrate with the receiving space free from penetrating the substrate. During an encapsulating process, an encapsulant can be filled in the receiving space so as to strengthen the bonding between the substrate and the encapsulant, thereby preventing delamination from occurring therebetween.Type: ApplicationFiled: August 3, 2016Publication date: October 26, 2017Inventors: Hung-Hsien Chang, Jyun-Ling Tsai, Yu-Ling Yeh, Wen-Tsung Tseng, Yi-Che Lai
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Publication number: 20170229387Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.Type: ApplicationFiled: February 16, 2017Publication date: August 10, 2017Inventors: Wen-Tsung Tseng, Yi-Che Lai, Shih-Kuang Chiu, Mao-Hua Yeh
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Publication number: 20170229386Abstract: A substrate structure is provided, including a substrate body having a conductive pad, an insulation layer formed on the substrate body and exposing the conductive pad, a conductive pillar disposed on the conductive pad, and a metal pad disposed on the insulation layer and electrically connected to the conductive pillar. A conductive component can be coupled to the metal pad. During a high-temperature process, the conductive pillar and the metal pad disperse the remaining stress generated due to heat, thereby preventing the conductive component from being cracked.Type: ApplicationFiled: September 7, 2016Publication date: August 10, 2017Inventors: Fang-Yu Liang, Hung-Hsien Chang, Yi-Che Lai, Wen-Tsung Tseng, Chen-Yu Huang
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Publication number: 20170148761Abstract: The present invention provides a semiconductor package and a method of fabricating the same, including: placing in a groove of a carrier a semiconductor element having opposing active and non-active surfaces, and side surfaces abutting the active surface and the non-active surface; applying an adhesive material in the groove and around a periphery of the side surfaces of the semiconductor element; forming a dielectric layer on the adhesive material and the active surface of the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second portion of the carrier on a side wall of the groove intact for the second portion to function as a supporting member. The present invention does not require formation of a silicon interposer, and therefore the overall cost of a final product is much reduced.Type: ApplicationFiled: January 6, 2017Publication date: May 25, 2017Inventors: Guang-Hwa Ma, Shih-Kuang Chiu, Shih-Ching Chen, Chun-Chi Ke, Chang-Lun Lu, Chun-Hung Lu, Hsien-Wen Chen, Chun-Tang Lin, Yi-Che Lai, Chi-Hsin Chiu, Wen-Tsung Tseng, Tsung-Te Yuan, Lu-Yi Chen, Mao-Hua Yeh
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Patent number: 9607939Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.Type: GrantFiled: April 23, 2014Date of Patent: March 28, 2017Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Wen-Tsung Tseng, Yi-Che Lai, Shih-Kuang Chiu, Mao-Hua Yeh
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Patent number: 8987012Abstract: A method of testing a semiconductor package is provided, including: disposing at least an interposer on a top surface of an adhesive layer, the interposer having a first surface and a second surface opposite to the first surface, a plurality of conductive elements disposed between the second surface of the interposer and the adhesive layer; disposing at least a semiconductor chip on the first surface of the interposer, and performing an electrical test on the semiconductor chip via the conductive elements, wherein if there are a plurality of semiconductor chips that are disposed on the first surface of the interposer, the step of disposing the semiconductor chip and performing the electrical test on the semiconductor chip is iterated; and removing the adhesive layer. By using the method, the fabrication cost and equipment cost of the semiconductor package are reduced, and product yield is increased.Type: GrantFiled: March 18, 2013Date of Patent: March 24, 2015Assignee: Siliconwave Precision Industries Co., Ltd.Inventors: Pin-Cheng Huang, Chun-Tang Lin, Wen-Tsung Tseng, Yi-Che Lai
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Publication number: 20150069628Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.Type: ApplicationFiled: April 23, 2014Publication date: March 12, 2015Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Wen-Tsung Tseng, Yi-Che Lai, Shih-Kuang Chiu, Mao-Hua Yeh
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Publication number: 20150035164Abstract: The present invention provides a semiconductor package and a method of fabricating the same, including: placing in a groove of a carrier a semiconductor element having opposing active and non-active surfaces, and side surfaces abutting the active surface and the non-active surface; applying an adhesive material in the groove and around a periphery of the side surfaces of the semiconductor element; forming a dielectric layer on the adhesive material and the active surface of the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second portion of the carrier on a side wall of the groove intact for the second portion to function as a supporting member. The present invention does not require formation of a silicon interposer, and therefore the overall cost of a final product is much reduced.Type: ApplicationFiled: August 28, 2013Publication date: February 5, 2015Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Guang-Hwa Ma, Shih-Kuang Chiu, Shih-Ching Chen, Chun-Chi Ke, Chang-Lun Lu, Chun-Hung Lu, Hsien-Wen Chen, Chun-Tang Lin, Yi-Che Lai, Chi-Hsin Chiu, Wen-Tsung Tseng, Tsung-Te Yuan, Lu-Yi Chen, Mao-Hua Yeh
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Publication number: 20150035163Abstract: The present invention provides a semiconductor package and a method of fabricating the same, including: placing a semiconductor element in a groove of a carrier; forming a dielectric layer on the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second of the carrier on a sidewall of the groove intact for the second portion to function as a supporting part. The present invention does not require formation of a silicon interposer, therefore the overall cost of the final product is much reduced.Type: ApplicationFiled: August 28, 2013Publication date: February 5, 2015Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Guang-Hwa Ma, Shih-Kuang Chiu, Shih-Ching Chen, Chun-Chi Ke, Chang-Lun Lu, Chun-Hung Lu, Hsien-Wen Chen, Chun-Tang Lin, Yi-Che Lai, Chi-Hsin Chiu, Wen-Tsung Tseng, Tsung-Te Yuan, Lu-Yi Chen, Mao-Hua Yeh
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Patent number: 8895366Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.Type: GrantFiled: February 26, 2014Date of Patent: November 25, 2014Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Wen-Home Huang, Wen-Tsung Tseng, Chang-Fu Lin, Ho-Yi Tsai, Cheng-Hsu Hsiao
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Publication number: 20140179067Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.Type: ApplicationFiled: February 26, 2014Publication date: June 26, 2014Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Wen-Home Huang, Wen-Tsung Tseng, Chang-Fu Lin, Ho-Yi Tsai, Cheng-Hsu Hsiao
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Publication number: 20140127838Abstract: A method of testing a semiconductor package is provided, including: disposing at least an interposer on a top surface of an adhesive layer, the interposer having a first surface and a second surface opposite to the first surface, a plurality of conductive elements disposed between the second surface of the interposer and the adhesive layer; disposing at least a semiconductor chip on the first surface of the interposer, and performing an electrical test on the semiconductor chip via the conductive elements, wherein if there are a plurality of semiconductor chips that are disposed on the first surface of the interposer, the step of disposing the semiconductor chip and performing the electrical test on the semiconductor chip is iterated; and removing the adhesive layer. By using the method, the fabrication cost and equipment cost of the semiconductor package are reduced, and product yield is increased.Type: ApplicationFiled: March 18, 2013Publication date: May 8, 2014Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Pin-Cheng Huang, Chun-Tang Lin, Wen-Tsung Tseng, Yi-Che Lai
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Patent number: 8698326Abstract: A semiconductor package and a fabrication method thereof are disclosed. The fabrication method includes the steps of providing a semiconductor chip having an active surface and a non-active surface opposing to the active surface, roughening a peripheral portion of the non-active surface so as to divide the non-active surface into the peripheral portion formed with a roughened structure and a non-roughened central portion, mounting the semiconductor chip on a chip carrier via a plurality of solder bumps formed on the active surface, forming an encapsulant on the chip carrier to encapsulate the semiconductor chip. The roughened structure formed on the peripheral portion of the non-active surface of the semiconductor chip can reinforce the bonding between the semiconductor chip and the encapsulant, and the non-roughened central portion of the non-active surface of the semiconductor chip can maintain the structural strength of the semiconductor chip.Type: GrantFiled: September 10, 2007Date of Patent: April 15, 2014Assignee: Silconware Precision Industries Co., Ltd.Inventors: Wen-Home Huang, Wen-Tsung Tseng, Chang-Fu Lin, Ho-Yi Tsai, Cheng-Hsu Hsiao
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Publication number: 20110287588Abstract: A heat-dissipating semiconductor package structure and a method for manufacturing the same is disclosed. The method includes: disposing on and electrically connecting to a chip carrier at least a semiconductor chip and a package unit; disposing on the top surface of the package unit a heat-dissipating element having a flat portion and a supporting portion via the flat portion; receiving the package unit and semiconductor chip in a receiving space formed by the flat portion and supporting portion of the heat-dissipating element; and forming on the chip carrier encapsulant for encapsulating the package unit, semiconductor chip, and heat-dissipating element. The heat-dissipating element dissipates heat generated by the package unit, provides EMI shielding, prevents delamination between the package unit and the encapsulant, decreases thermal resistance, and prevents cracking.Type: ApplicationFiled: August 1, 2011Publication date: November 24, 2011Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.Inventors: Wen-Tsung Tseng, Ho-Yi Tsai, Chien-Ping Huang, Cheng-Hsu Hsiao
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Patent number: 8008769Abstract: A heat-dissipating semiconductor package structure and a method for manufacturing the same is disclosed. The method includes: disposing on and electrically connecting to a chip carrier at least a semiconductor chip and a package unit; disposing on the top surface of the package unit a heat-dissipating element having a flat portion and a supporting portion via the flat portion; receiving the package unit and semiconductor chip in a receiving space formed by the flat portion and supporting portion of the heat-dissipating element; and forming on the chip carrier encapsulant for encapsulating the package unit, semiconductor chip, and heat-dissipating element. The heat-dissipating element dissipates heat generated by the package unit, provides EMI shielding, prevents delamination between the package unit and the encapsulant, decreases thermal resistance, and prevents cracking.Type: GrantFiled: April 23, 2008Date of Patent: August 30, 2011Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Wen-Tsung Tseng, Ho-Yi Tsai, Chien-Ping Huang, Cheng-Hsu Hsiao
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Patent number: 7889511Abstract: An electronic carrier board is provided, including a carrier, at least two paired bond pads formed on the carrier, and a protective layer covering the carrier. The protective layer is formed with openings corresponding in position to the two bond pads. The openings are aligned in the same direction and expose at least a first sidewall and a second sidewall of each of the two bond pads. The first sidewall is perpendicular to an alignment direction of the bond pads and the second sidewall is parallel to the alignment direction of the bond pads. A distance between the first sidewall of at least one of the bond pads and a corresponding side of a corresponding one of the openings is at least about 50 ?m greater than a distance between the second sidewall of the at least one bond pad and a corresponding side of the corresponding opening.Type: GrantFiled: August 4, 2009Date of Patent: February 15, 2011Assignee: Siliconware Precision Industries Co., Ltd.Inventors: Fang-Lin Tsai, Ho-Yi Tsai, Wen-Tsung Tseng, Chih-Ming Huang