Abstract: An automated optical inspection system for the runout tolerance of circular saw blades comprises a rotating device, a first and a second optical inspection module, and a computing device. The rotating device is used to rotate a circular saw blade. The circular saw blade includes multiple teeth, and each tooth has a side and a back. The first/second optical inspection module is used to capture a side/back image of the tooth. The computing device activates the rotating device to rotate the circular saw blade, and activates the first and the second optical inspection module to capture the side image and the back image of each tooth upon rotation of the circular saw blade. The computing device performs a radial-position-calculating procedure according to the side images, to obtain an amount of radial runout, and performs an axial-position-calculating procedure according to the back images, to obtain an amount of axial runout.

Abstract: A destructive web thickness measuring system of microdrills includes a computer device, a dual-axis motion platform module, a drill grinding module, a positioning vision module, and a web thickness measuring vision module. When the computer device controls the dual-axis motion platform module to move a microdrill to a first locating position, the computer device performs a positioning procedure according to a first image captured by the positioning vision module, and then performs a grinding procedure, so that the drill grinding module grinds the microdrill to a sectional position to be inspected. When the ground microdrill moves to an image measuring position, the computer device performs an image computing procedure according to a second image captured by the web thickness measuring vision module, so as to obtain a web thickness value. Therefore, the destructive web thickness measuring system of microdrills can automatically measure the web thickness value.

Abstract: A semiconductor wafer includes a plurality of active circuit die areas, each of which being bordered by a dicing line region through which the plurality of active circuit die areas are separated from each other by mechanical wafer dicing. Each of the plurality of active circuit die areas has four sides. An overcoat covers both the active circuit die areas and the dicing line region. An inter-layer dielectric layer is disposed underneath the overcoat. A reinforcement structure includes a plurality of holes formed within the dicing line region. The plurality of holes are formed by etching through the overcoat into the inter-layer dielectric layer and are disposed along the four sides of each active circuit die area. A die seal ring is disposed in between the active circuit chip area and the reinforcement structure.

Abstract: A semiconductor wafer includes a plurality of active circuit die areas, each of which being bordered by a dicing line region through which the plurality of active circuit die areas are separated from each other, wherein each of the plurality of active circuit die areas has substantially four corners. An overcoat is deposited to cover both the active circuit die areas and the dicing line region. A first trench is formed by etching through the overcoat and disposed merely around the four corners of each active circuit die area. A reinforcing second trench is etched into the overcoat and is disposed in proximity to the first trench. A die seal ring is disposed in between the active circuit chip area and the first trench.

Abstract: A semiconductor wafer includes a plurality of active circuit die areas, each of which being bordered by a dicing line region through which the plurality of active circuit die areas are separated from each other by mechanical wafer dicing. Each of the plurality of active circuit die areas has four sides. An overcoat covers both the active circuit die areas and the dicing line region. An inter-layer dielectric layer is disposed underneath the overcoat. A reinforcement structure includes a plurality of holes formed within the dicing line region. The plurality of holes are formed by etching through the overcoat into the inter-layer dielectric layer and are disposed along the four sides of each active circuit die area. A die seal ring is disposed in between the active circuit chip area and the reinforcement structure.

Abstract: A method of preparing a test sample for electron microscopy analysis is disclosed. First, a chip segment is attached to a holder of a sample polisher, and a first polishing end of the chip segment is polished by using the sample polisher to generate a first polished cross section. Thereafter, the chip segment is detached from the holder. Further, a carrier segment is attached to the first cross section of the chip segment and the conjoined carrier segment and the chip segment are attached to a pad segment so as to form a stacked structure. Finally, the stacked structure is attached to the holder, and a second polishing end of the chip segment is polished to generate a second polished cross section.

Abstract: A method of sample preparation for transmission electron microscope analysis is disclosed. The method renders a typical TEM analysis on a sample having a photoresist layer practical. The method uses a conductive layer and a dielectric layer to protect a photoresist layer of the TEM sample from slicing damage and ion bombardment. The conductive layer and the dielectric layer can also isolate the photoresist layer from moisture and oxygen containing environments and prevent the photoresist layer from shrinking. Moreover, the entire TEM sample preparation process need not use any organic solvent or water to clean the sample.

Abstract: A fabrication method for a transmission electron microscope (TEM) slide is described. A die having device structures formed thereon is provided. A thermal adhesive fills the surface of device structures formed on the die. The thermal adhesive is covered by a glass piece. A polishing step is performed to a non-device side of the die to form a thin sheet from the die. The glass piece is removed to expose the thermal adhesive. A sacrificial layer is then formed above the exposed thermal adhesive on the thin sheet. A slicing step is performed to form a TEM slide from the thin sheet.

Abstract: A method of sample preparation for transmission electron microscope analysis is disclosed. The method renders a typical TEM analysis on a sample having a photoresist layer practical. The method uses a conductive layer and a dielectric layer to protect a photoresist layer of the TEM sample from slicing damages and ion bombardments. The conductive layer and the dielectric layer can also isolate the photoresist layer from moisture and oxygen-contained environments and prevent the photoresist layer from shrinking. Moreover, the entire TEM sample preparation process need not use any organic solvent or water to clean the sample.

Abstract: A fabrication method for a transmission electron microscope (TEM) slideis described. A die having device structures formed thereon is provided A thermal adhesive fills the surface of device structures formed on the die. The thermal adhesive is covered by a glass piece. A polishing step is performed to form a slide from the die. The glass piece is removed to expose the thermal adhesive. A sacrificial layer is then formed above the exposed thermal adhesive on the slide. A slicing step is performed to form a TEM slide.

Abstract: A method for protecting a specific region in the sample applied in preparing an ultra-thin specimen is disclosed. The method includes the steps of (a) forming a first concavity on a first side of the specific region by a focus ion beam (FIB) technique, (b) forming a second concavity on a second side of the specific region opposite to the first side by the focus ion beam technique, (c) filling the first concavity and the second concavity with a first metallic packing and a second metallic packing respectively, and (d) forming a third metallic packing on the specific region and extending to connecting with the first metallic packing and the second metallic packing to define a protecting device for protecting the specific region.

Abstract: A method for distinguishing a specific region in a sample to be observed by a microscope is disclosed. The method includes the steps of (a) forming a first concavity on a first side of the specific region by a focus ion beam (FIB) technique, (b) forming a second concavity on a second side of the specific region opposite to the first side by the focus ion beam technique, and (c) filling the first concavity and the second concavity with a first metallic packing and a second metallic packing respectively for defining the specific region to be observed.

Abstract: An apparatus for preparing an ultra-thin specimen with a polishing wheel is developed. The apparatus includes a base, a holding unit mounted on the base and having a movable part for supporting the specimen, and an adjusting assembly attached to the base for adjusting an orientation of the specimen relative to a top surface of the polishing wheel by providing a fine movement during polishing. The movable part of the holding unit is advantageously moved away from the adjusting assembly to enlarge the latitudinal cross-section of the apparatus so as to increase the precision of the orientation.