Abstract: Updating a user social network profile of a user based on relevant activities posted by other users in a same social network.

Abstract: A method for recognizing a human face and a license plate includes the following steps: providing a wearable device comprising an image capturing device; capturing an image through the image capturing device; determining whether a human face or a license plate is in the image; analyzing the human face or the license plate and generating recognized human face data or recognized license plate data when a human face or a license plate is in the image; comparing the recognized human face data or the recognized license plate data with a plurality of human face data and a plurality of license plate data saved in a database; and displaying the recognized human face data or the recognized license plate data when the recognized human face data or the recognized license plate data matches the human face data or the license plate data.

Abstract: A wearable device capable of recognizing a human face and a license plate includes a camera, an image capturing unit, a database, a central processing unit and a display unit. The camera receives external light to generate an image, and the image is captured by the image capturing unit. The captured image is transmitted to the central processing unit and recognized whether the image includes human faces or license plate of a car. The recognized data of human faces or license plate are compared with pre-stored data of human faces and license plate in the data base. When the recognized data matches the pre-stored data, the recognized data is shown in the display unit.

Abstract: A method for assisting a user with one or more desired tasks is disclosed. For example, an executable, generic language understanding module and an executable, generic task reasoning module are provided for execution in the computer processing system. A set of run-time specifications is provided to the generic language understanding module and the generic task reasoning module, comprising one or more models specific to a domain. A language input is then received from a user, an intention of the user is determined with respect to one or more desired tasks, and the user is assisted with the one or more desired tasks, in accordance with the intention of the user.

Abstract: A VPN tunnel policy is defined on a per-application basis. The VPN tunnel policy may specify that a particular application is permitted to transmit data on a specific VPN tunnel. Subsequently, the specified application is delivered to one or more virtual machines and an application tunnel manager creates a new virtual network interface card (NIC) on the VM, corresponding to the delivered application. The newly created virtual NIC is attached to a specified subnet. The subnet may be a VPN transition network with a connection to a VPN gateway device. The subnet may have been previously defined or generated at the time of assigning the application to the VPN tunnel. Once the virtual NIC has been created on the VM, an OS script is executed to force the delivered application to use the newly created virtual NIC and to prevent users from changing the application and virtual NIC linkage.

Abstract: A method for forming a semiconductor device structure includes providing a substrate having a first fin structure and a second fin structure that are capped by a patterned hard mask structure. A liner layer and an overlying insulating layer are formed between the first and second fin structures. A multi-step etching process including a first step of selectively removing the patterned hard mask structure and a second step of in-situ and selectively removing a portion of the insulating layer to form an isolation feature is performed. The process gas used in the multi-step etching process includes a first etching gas and a second etching gas. The flow rate of the first etching gas is greater than that of the second etching gas in the first step and the flow rate of the first etching gas is less than that of the second etching gas in the second step.

Abstract: An apparatus and method of three dimensional conductive lines comprising a first memory column segment in a first tier, a second memory column segment in a second tier, and conductive lines connecting the first memory column segment to the second memory column segment. In some embodiments a conductive line is disposed in the first tier on a first side of the memory column and in the second tier on a second side of the memory column.

Abstract: For a metal gate replacement integration scheme, the present disclosure describes removing a polysilicon gate electrode with a highly selective wet etch chemistry without damaging surrounding layers. For example, the wet etch chemistry can include one or more alkaline solvents with a steric hindrance amine structure, a buffer system that includes tetramethylammonium hydroxide (TMAH) and monoethanolamine (MEA), one or more polar solvents, and water.

Abstract: A method for fabricating a bonding pad structure includes forming a dielectric layer on a substrate; forming a first metal pattern layer in the dielectric layer. The first metal pattern layer includes a first body portion having a plurality of first openings in a central region of the first body portion and a plurality of second openings arranged along a peripheral region of the first body portion and surrounding the plurality of first openings; and a plurality of first island portions correspondingly disposed in the plurality of second openings and spaced apart from the first body portion. The method further includes forming a plurality of first interconnect structures in the dielectric layer and corresponding to the plurality of first island portions; and forming a bonding pad on the dielectric layer and directly above the first metal pattern layer.

Abstract: The technology relates to a prophylactic bandage contact lens that prevents microbial infections in an eye as well as treats infection by dispensing antimicrobial medication at controlled rates. In one embodiment, the invention provides a bandage with nanostructures, and provides a continuous treatment over 10 days and shields the eye from the environment, significantly diminishing the risk of infection while allowing damaged tissues to heal.

Abstract: A circuit includes a column of memory cells, a first read data line coupled exclusively with a first subset of memory cells of the column of memory cells, a second read data line coupled exclusively with a second subset of memory cells of the column of memory cells, and a plurality of read word lines. Each read word line of the plurality of read word lines is coupled with a memory cell of the first subset of memory cells and with a memory cell of the second subset of memory cells.

Abstract: An improved high temperature resistant backside metallization for compound semiconductors comprises a front-side metal layer formed on a compound semiconductor substrate; at least one via hole penetrating the compound semiconductor substrate, a top of an inner surface of the via hole is defined by the front-side metal layer; at least one seed metal layer, at least one backside metal layer and at least one diffusion barrier layer sequentially formed on a bottom surface of the compound semiconductor substrate and the inner surface of the via hole, the seed metal layer and the front-side metal layer are electrically connected through the via hole; a die attachment metal layer formed on a bottom surface of the diffusion barrier layer other than the via hole and an adjacent area near the via hole. The diffusion barrier layer prevents the backside metal layer from diffusing into the die attachment metal layer.

Abstract: A dual-axis hinge assembly including a first rotating shaft, a second rotating shaft, torque components, a rotating shaft sleeve, a first bracket, a second bracket, and two bracket sleeves is provided. The second rotating shaft is disposed side-by-side to the first rotating shaft. The torque components are disposed at the first rotating shaft and the second rotating shaft. The rotating shaft sleeve covers the first rotating shaft, the second rotating shaft, and the torque components. The first bracket is connected to the first rotating shaft. The second bracket is connected to the second rotating shaft. The two bracket sleeves are respectively coaxial with the first rotating shaft and the second rotating shaft and respectively cover the first bracket and the second bracket. The two bracket sleeves and the rotating shaft sleeve are sleeved together. The invention further provides a plurality of electronic devices.

Abstract: In various aspects, the present disclosure is directed to methods and compositions for the simultaneous production of carbon nanotubes and hydrogen gas from lower hydrocarbon comprises methane, ethane, propane, butane, or a combination thereof utilizing the disclosed catalysts. In various aspects, the disclosure relates to methods for COx-free production of hydrogen with concomitant production of carbon nanotubes. Also disclosed are methods and compostions for selective base grown carbon nanotubes over a disclosed catalyst composition. In a further aspect, the disclosure relates to mono, bimetallic, and trimetallic catalysts comprising a 3d transition metal (e.g., Ni, Fe, Co, Mn, Cr, Mo, and combinations thereof) over a support material selected from a silica, an alumina, a zeolite, titatnium dioxide, and combinations thereof. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: An opening is formed within a dielectric material overlying a semiconductor substrate. The opening may comprise a via portion and a trench portion. During the manufacturing process a treatment chemical is placed into contact with the exposed surfaces in order to release charges that have built up on the surfaces. By releasing the charges, a surface change potential difference is reduced, helping to prevent galvanic corrosion from occurring during further manufacturing.

Abstract: The present disclosure provides a computer implemented method. The method includes using a computer processor to perform the operations of constructing a nucleic acid mutation interaction network based upon nucleic acid pair-level interactions of a genetic sample scored under at least one disease model. The method further includes performing a thresholding and binarization process on the nucleic acid pair interactions to derive an interaction network. The method further includes testing pairs of pathways of the interaction network for either between pathway model (BPM) or within pathway model (WPM) enrichment of nucleic acid-nucleic acid mutation pair interaction. The method additionally includes outputting nucleic acid-nucleic acid mutation pair interaction data.

Abstract: Embodiments of wafer bonding method and structures thereof are disclosed. The wafer bonding method can include performing a plasma activation treatment on a front surface of a first and a front surface of a second wafer; performing a silica sol treatment on the front surfaces of the first and the second wafers; performing a preliminary bonding process of the first and second wafer; and performing a heat treatment of the first and the second wafers to bond the front surface of the first wafer to the front surface of the second wafers.

Abstract: A voltmeter of the present disclosure includes a multimeter, a first option switch, a second option switch, a control module, an adjusting power source and a button. The multimeter has a positive probe and a negative probe. The first option switch has two binding posts S1, S2, and a connection pin T1. The second option switch also has two binding posts S3, S4 and a connection pin T2. The positive probe of the multimeter is coupled with the connection pin T1 of the first option switch, the negative probe of the multimeter is coupled with the connection pin T2 of the second option switch. The control module can control the first option switch and the second option switch, and read a value of the multimeter, the multimeter and test a voltage of a circuit by the adjusting power source being equivalent to the voltage of the circuit.

Abstract: A non-volatile memory device includes a semiconductor substrate, a control gate electrode, a first oxide-nitride-oxide (ONO) structure, a selecting gate electrode, a second ONO structure, and a spacer structure. The control gate electrode and the selecting gate electrode are disposed on the semiconductor substrate. The first ONO structure is disposed between the control gate electrode and the semiconductor substrate. The second ONO structure is disposed between the control gate electrode and the selecting gate electrode in a first direction. The spacer structure is disposed between the control gate electrode and the second ONO structure in the first direction. A distance between the control gate electrode and the selecting gate electrode in the first direction is smaller than or equal to a sum of a width of the second ONO structure and a width of the spacer structure in the first direction.

Abstract: A wearable device of the invention includes a first display device, a second display device near the first device, a camera module catching a visible image in a view angle and transmitting the visible image to the first display device, wherein the visible image is displayed on the first display device, a thermal graphic camera catching a thermal image in the view angle and transmitting the thermal image to the second display device, wherein the thermal image is displayed on the second display device.