Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.

Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a second dielectric layer on the high resistance layer, a low-k dielectric layer over the second dielectric layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.

Abstract: A memory device includes a resistor and a controller chip. The controller chip includes a first controller, a second controller, a first set of input/output (I/O) circuits, a second set of I/O circuits, a first calibration circuit, a second calibration circuit, and an arbitration circuit. The first controller transmits a first controller calibration request. The second controller transmits a second controller calibration request. The arbitration circuit instructs the first calibration circuit to perform a first controller calibration on the first set of I/O circuits using the resistor in response to the first controller calibration request, and instructs the second calibration circuit to perform a second controller calibration on the second set of I/O circuits using the resistor in response to the second controller calibration request. A first time interval of performing the first controller calibration and a second time interval of performing the second controller calibrations are non-overlapping.

Abstract: The present invention provides a thermoplastic polyurethane (TPU) having a glass transition temperature between an ambient temperature and normal body temperature, wherein the TPU contains dicarboxyphenyl polyester structure represented by Formula 1 or 10-(2,3-dicarboxypropyl)-9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide n(DOPO-ITA) polyester structure represented by Formula 2. The present invention also provides a polyester polyol containing DOPO-ITA polyester structure represented by Formula 2, a molar percentage of the 10-(2,3-dicarboxypropyl)-9,10-dihydro-9-oxa-10-oxide polyester structure in the whole polyester polyol ranges from 30% to 70%. The present invention further provides an article thereof. in Formula 1, R is C2 to C8 alkylene group or CH2CH2OCH2CH2; in Formula 2, R is C2 to C8 alkylene group or CH2CH2OCH2CH2.

Abstract: The present invention provides a thermoplastic elastomer composition for foaming. The thermoplastic elastomer composition comprises: (A) an ethylene-based copolymer; (B) an olefin block copolymer; (C) an unsaturated aliphatic rubber; and (D) a crosslinking agent. The olefin block copolymer is different from the ethylene-based copolymer. The weight ratio of the unsaturated aliphatic rubber (C) to the olefin block copolymer (B) is 1:1.5 to 1:5.

Abstract: The present invention provides a thermoplastic polyurethane (TPU) having a glass transition temperature between an ambient temperature and normal body temperature, wherein the TPU contains dicarboxyphenyl polyester structure represented by Formula 1 or 10-(2,3-dicarboxypropyl)-9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide n(DOPO-ITA) polyester structure represented by Formula 2. The present invention also provides a polyester polyol containing DOPO-ITA polyester structure represented by Formula 2, a molar percentage of the 10-(2,3-dicarboxypropyl)-9,10-dihydro-9-oxa-10-oxide polyester structure in the whole polyester polyol ranges from 30% to 70%. The present invention further provides an article thereof. in Formula 1, R is C2 to C8 alkylene group or CH2CH2OCH2CH2; in Formula 2, R is C2 to C8 alkylene group or CH2CH2OCH2CH2.

Abstract: A polyolefin elastomer composite includes a copolymer, an unsaturated aliphatic polyolefin, an organic peroxide, and an acrylic acid metallic salt mixture. The copolymer is an ethylene copolymer, an olefin block copolymer, or a combination thereof. The ratio of the amount of unsaturated aliphatic polyolefin and the copolymer is 1:3 to 3:1. Based on the total amount of the unsaturated aliphatic polyolefin and the copolymer as 100 parts by weight, the amount of the organic peroxide is 0.1 to 1 part by weight and the amount of the acrylic acid metallic salt mixture is 0.1 to 5 parts by weight. The polyolefin elastomer composite can produce a foamed elastomer having high rebound resilience and low compression set.

Abstract: A metallic acrylate composition comprises a metallic acrylate and a dispersant, wherein the content of the dispersant is in the range from 0.1 weight percent to 5 weight percent based on the total weight of the metallic acrylate composition, and the metallic acrylate has the structure represented by Formula (I) or Formula (II) as follows: wherein in Formula (I) and Formula (II), X is larger than 0 and less than 2, and M2+ is zinc ion (Zn2+), magnesium ion (Mg2+) or calcium ion (Ca2+); R1 is a hydrogen group or a saturated alkyl group; and R2 is and the dispersant is polytetrafluoroethylene (PTFE) wax or PTFE-modified polyethylene wax.

Abstract: A polyolefin elastomer composite includes a copolymer, an unsaturated aliphatic polyolefin, an organic peroxide, and an metallic acrylate. The copolymer is an ethylene copolymer, an olefin block copolymer, or a combination thereof. The usage ratio of the unsaturated aliphatic polyolefin and the copolymer is 1:3 to 3:1. Based on the total amount of the unsaturated aliphatic polyolefin and the copolymer as 100 parts by weight, the usage of the organic peroxide is 0.1 to 1 part by weight and the usage of the metallic acrylate is 0.1 to 5 parts by weight. The polyolefin elastomer composite can produce a foamed elastomer having high rebound resilience and low compression set.

Abstract: A metallic acrylate composition comprises a metallic acrylate and a dispersant, wherein the content of the dispersant is in the range from 0.1 weight percent to 5 weight percent based on the total weight of the metallic acrylate composition, and the metallic acrylate has the structure represented by Formula (I) or Formula (II) as follows: wherein in Formula (I) and Formula (II), X is larger than 0 and less than 2, and M2+ is zinc ion (Zn2+), magnesium ion (Mg2+) or calcium ion (Ca2+); R1 is a hydrogen group or a saturated alkyl group; and R2 is and the dispersant is polytetrafluoroethylene (PTFE) wax or PTFE-modified polyethylene wax.

Abstract: Provided are a metallic crosslinking coagent, preparation methods thereof, and a resin composition comprising the metallic crosslinking coagent. With the active-hydrogen containing organic phosphorus compound group and metallophilic acrylate group, the metallic crosslinking coagent provides both stabilizer and flame-retardant effects, enhances the crosslinking efficiency of the resin composition, and improves the compatibility between flame retardant and the polymer. Accordingly, the metallic crosslinking coagent is effective to improve the mechanical properties of the application material and to develop a safe and environmentally friendly flame retardant material.

Abstract: Provided are a metallic crosslinking coagent, preparation methods thereof, and a resin composition comprising the metallic crosslinking coagent. With the active-hydrogen containing organic phosphorus compound group and metallophilic acrylate group, the metallic crosslinking coagent provides both stabilizer and flame-retardant effects, enhances the crosslinking efficiency of the resin composition, and improves the compatibility between flame retardant and the polymer. Accordingly, the metallic crosslinking coagent is effective to improve the mechanical properties of the application material and to develop a safe and environmentally friendly flame retardant material.

Abstract: A surface pattern detecting method includes: capturing a surface image of a sample element to be detected, wherein the surface image containing N grayscale pixels and wherein the N is a positive integer; selecting f×N pixels with small grayscale value based on a selection ratio f in order to define a pattern zone and further calculating a pattern mean of the pattern zone based on pixel amount and grayscale value of the pattern zone; selecting f×N pixels with big grayscale value in order to define a background zone and further calculating a background mean of the background zone based on pixel amount and grayscale value of the background zone; and determining whether the surface image has a defect based on the pattern means of the pattern zone and the background mean of the background zone.

Abstract: A surface pattern detecting method includes: capturing a surface image of a sample element to be detected, wherein the surface image containing N grayscale pixels and wherein the N is a positive integer; selecting f×N pixels with small grayscale value based on a selection ratio f in order to define a pattern zone and further calculating a pattern mean of the pattern zone based on pixel amount and grayscale value of the pattern zone; selecting f×N pixels with big grayscale value in order to define a background zone and further calculating a background mean of the background zone based on pixel amount and grayscale value of the background zone; and determining whether the surface image has a defect based on the pattern means of the pattern zone and the background mean of the background zone.