Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a molded memory device may include multiple stacked NAND dies electrically coupled to one another via multiple wire bonds. The molded memory device may include a molded casing surrounding the multiple stacked NAND dies and encapsulating the multiple wire bonds, with the molded casing including a first mold surrounding a first portion of a first NAND die, of the multiple stacked NAND dies, and a second mold partially surrounding a second portion of the first NAND die and each additional NAND die, of the multiple NAND dies. The molded memory device may include multiple copper contacts configured to couple the molded memory device to a substrate associated with a system in package, with the plurality of copper contacts being disposed in the first mold.

Abstract: A microelectronic device package includes a microelectronic device, a masking material defined (MMD) contact, and a non-masking material defined (NMMD) contact. The microelectronic device is supported on, and electrically connected to, one of a package substrate and a redistribution layer. The MMD contact is located in a first region of the one of the package substrate and the redistribution layer and facilitates a first electrical connection between the microelectronic device and the one of the package substrate and the redistribution layer. The NMMD contact is located in a second, different region of the one of the package substrate and the redistribution layer and facilitates a second electrical connection between the microelectronic device and the one of the package substrate and the redistribution layer. Related methods and systems are also disclosed.

Abstract: Implementations described herein relate to various apparatuses and integrated assemblies. In some implementations, an apparatus may include a substrate having a first surface and a second surface that is on an opposite side of the substrate with respect to the first surface. The apparatus may include an integrated circuit disposed on the substrate. The apparatus may include a decoupling capacitor configured to stabilize an input voltage supplied to the integrated circuit, wherein all electrodes of the decoupling capacitor are entirely within a region between the first surface and the second surface.

Abstract: A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Abstract: Over-molded IC package assemblies including an in-mold capacitor. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more capacitors are fabricated within the molding compound. The capacitors may include two or more metal plates separated by an intervening dielectric material, all of which are embedded within a trench in the molding compound. Individual ones of the capacitor plates may physically contact a conductive land of the package redistribution layer or package substrate, for example to tie the plates to a ground plane and power plane, or two supply rails, in a decoupling capacitor application.

Abstract: A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Abstract: A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Abstract: Over-molded IC package assemblies including an embedded voltage reference plane and/or heat spreader. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more conductive layers are embedded within the molding compound. The conductive layers may include an interior portion located over the IC chip and a peripheral portion located over the redistribution layers or package substrate. The interior portion may comprise one or more heat conductive features, which may physically contact a surface of the IC chip. In some further embodiments, the peripheral portion comprises one or more electrically conductive features, which may physically contact a surface of the package redistribution layers or package substrate to convey a reference voltage.

Abstract: A stacked-die and stacked-capacitor package vertically arranged capacitors to mirror a semiconductive-device stack. The stacked capacitor can be electrically coupled to one or more semiconductive devices in the stacked architecture.

Abstract: Over-molded IC package assemblies including an embedded voltage reference plane and/or heat spreader. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more conductive layers are embedded within the molding compound. The conductive layers may include an interior portion located over the IC chip and a peripheral portion located over the redistribution layers or package substrate. The interior portion may comprise one or more heat conductive features, which may physically contact a surface of the IC chip. In some further embodiments, the peripheral portion comprises one or more electrically conductive features, which may physically contact a surface of the package redistribution layers or package substrate to convey a reference voltage.

Abstract: Over-molded IC package assemblies including an in-mold capacitor. In some embodiments, an over-molded package assembly includes a IC chip or die coupled to one or more metal distribution layer or package substrate. A molding compound encapsulates at least the IC chip and one or more capacitors are fabricated within the molding compound. The capacitors may include two or more metal plates separated by an intervening dielectric material, all of which are embedded within a trench in the molding compound. Individual ones of the capacitor plates may physically contact a conductive land of the package redistribution layer or package substrate, for example to tie the plates to a ground plane and power plane, or two supply rails, in a decoupling capacitor application.