Abstract: A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate has a first region and a second region. A stacked structure is formed on the substrate in the first region. The stacked structure includes a first dielectric layer, a charge storage layer, a second dielectric layer, a first conductive layer, and a first hard mask layer. A dielectric material layer is formed on the substrate in the second region. A second conductive layer is formed on the dielectric material layer in the second region. A first patterned photoresist layer is formed. The first hard mask layer exposed by the first patterned photoresist layer and a portion of the dielectric material layer exposed by the first patterned photoresist layer are removed by using the first patterned photoresist layer as a mask.

Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method of the semiconductor structure includes the following steps: providing a semiconductor substrate, wherein the semiconductor substrate has a first region and a second region surrounding the first region; forming a gate stack and a dummy gate stack in the first region, wherein the dummy gate stack surrounds the gate stack; forming an oxide layer on an exterior wall and a top surface of the dummy gate stack; forming a dummy conductive layer on the gate stack, the dummy gate stack and the oxide layer, wherein the dummy conductive layer has a concave bowl-shaped top surface in the first region; and performing a chemical mechanical polishing (CMP) process on the dummy conductive layer.