Patents by Inventor Wen-xia ZUO

Wen-xia ZUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating IGZO layer and TFT
    Patent number: 9368602
    Abstract: Methods for fabricating an IGZO layer and fabricating TFT are provided in the present invention. The method for fabricating TFT includes the following steps: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer; (2) coating the IGZO layer with a photoresist, and then subjecting the photoresist to an exposing and developing process to form a photoresist pattern; and (3) subjecting the IGZO layer to an etching process, and then removing the photoresist. By forming an oxidizing gas protective layer, the present methods for fabricating an IGZO layer and fabricating TFT can effectively reduce the effect of hydrogen atom on IGZO layer and avoid the change of IGZO layer from semiconductor to conductor, thereby improving the stability of the IGZO layer and thus the TFT, and reducing the negative bias of threshold voltage generated by the long-term continuous use of the device.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: June 14, 2016
    Assignee: EverDisplay Optronics (Shanghai) Limited
    Inventors: Chia-chi Huang, Min-ching Hsu, Hsueh-ming Tsai, Wen-xia Zuo
  • METHOD FOR FABRICATING IGZO LAYER AND TFT
    Publication number: 20150011047
    Abstract: Methods for fabricating an IGZO layer and fabricating TFT are provided in the present invention. The method for fabricating TFT includes the following steps: (1) depositing an IGZO layer and forming a surface oxidizing gas protective layer on the IGZO layer; (2) coating the IGZO layer with a photoresist, and then subjecting the photoresist to an exposing and developing process to form a photoresist pattern; and (3) subjecting the IGZO layer to an etching process, and then removing the photoresist. By forming an oxidizing gas protective layer, the present methods for fabricating an IGZO layer and fabricating TFT can effectively reduce the effect of hydrogen atom on IGZO layer and avoid the change of IGZO layer from semiconductor to conductor, thereby improving the stability of the IGZO layer and thus the TFT, and reducing the negative bias of threshold voltage generated by the long-term continuous use of the device.
    Type: Application
    Filed: June 27, 2014
    Publication date: January 8, 2015
    Inventors: Chia-chi HUANG, Min-ching HSU, Hsueh-ming TSAI, Wen-xia ZUO