Abstract: Provided is a graphene-based coating suspension comprising multiple graphene sheets, thin film coating of an anti-corrosive pigment or sacrificial metal deposited on graphene sheets, and a binder resin dissolved or dispersed in a liquid medium, wherein the multiple graphene sheets contain single-layer or few-layer graphene sheets selected from a pristine graphene material having essentially zero % of non-carbon elements, or a non-pristine graphene material having 0.001% to 47% by weight of non-carbon elements wherein the non-pristine graphene is selected from graphene oxide, reduced graphene oxide, graphene fluoride, graphene chloride, graphene bromide, graphene iodide, hydrogenated graphene, nitrogenated graphene, doped graphene, chemically functionalized graphene, or a combination thereof. The invention also provides a process for producing this coating suspension. Also provided is an object or structure coated at least in part with such a coating.

Abstract: A magnetic recording disk for thermally-assisted magnetic recording has a low thermal conductivity multilayered thermal barrier between the substrate and the magnetic recording layer to avoid rapid heat conduction away from the locally heated spot and to reduce the amount of power needed to raise the temperature of the recording media above a required value. The barrier comprises a plurality of alternating layers or bilayers of a metal having an electrical resistivity greater than approximately 100 microOhm-cm and a dielectric selected from the group consisting of oxides, nitrides and oxynitrides of one or more of Al and Si. The large number of metal/dielectric interfaces, each with high thermal resistance, reduces the out-of-plane thermal conductivity of the barrier, and the use of high electrical resistivity metal layers minimizes in-plane heat spreading.

Abstract: A magnetic recording disk for thermally-assisted magnetic recording has a low thermal conductivity multilayered thermal barrier between the substrate and the magnetic recording layer to avoid rapid heat conduction away from the locally heated spot and to reduce the amount of power needed to raise the temperature of the recording media above a required value. The barrier comprises a plurality of alternating layers or bilayers of a metal having an electrical resistivity greater than approximately 100 microOhm-cm and a dielectric selected from the group consisting of oxides, nitrides and oxynitrides of one or more of Al and Si. The large number of metal/dielectric interfaces, each with high thermal resistance, reduces the out-of-plane thermal conductivity of the barrier, and the use of high electrical resistivity metal layers minimizes in-plane heat spreading.

Abstract: A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors and the like. A first semiconductor thin film layer of NiO.sub.x having p type properties is disposed on an arbitrary substrate, such as alumina, glass, silicon dioxide, silicon and the like. A second semiconducting layer of tin oxide or indium oxide or other transparent oxide is joined to the first layer to form a p/n junction. In one method of fabrication, the p/n junction is formed in a sputtering process under a partial oxygen pressure to control the stoichiometry of the films. Gold and Gold Indium contacts are attached to the films to provide electrical contacts. The device is enclosed in a protective coating and connected in parallel with an electronic device subject to electrostatic discharge.

Abstract: Improved processes for making thin film and bulk thallium superconductors are described, as well as Tl superconductors having high critical current densities and low surface impedance. An annealing step in a reduced oxygen atmosphere is used to convert compounds containing thallium, calcium, barium and copper to a Tl-2223 superconducting phase or to convert an oxide having the nominal composition Tl.sub.2 Ca.sub.2 Ba.sub.2 Cu.sub.3 O.sub.x to a crystalline Tl-2223 phase. The oxygen pressure during annealing is controlled to be below the thermodynamic stability limit for conversion of Tl-2223 to Tl-2122 and secondary phases. Temperatures less than 880.degree. C. are used, the oxygen pressure being sufficient to prevent excess thallium loss so that the Tl content in the final Tl-2223 phase is Tl.sub.1.6-2.0. Electrical devices including SQUIDs can be made with these improved superconductors.

Abstract: A method of and structure for optical recording by energy-induced homogenization or fractionation is disclosed. When the method involves fractionation, a film is provided that contains a homogeneous mixture of a matrix material and an incident energy absorbing material. A spot on the film is treated with sufficient energy in the form of electric fields, radiation or heat, or combinations thereof to effect fractionation and/or homogenization of the film which will undergo further physical state transition only under treatment with additional energy. In a preferred embodiment, the fractionation is effected by laser radiation. The laser irradiated spot becomes inhomogeneous and can be detected by the resulting changes in its optical properties. When the method involves homogenization, a film is provided that contains a inhomogeneous mixture. The energy treated spot in this case becomes homogeneous without undergoing a phase transition between the amorphous and crystalline phases.

Abstract: A recording medium comprising a transport substrate, a tellurium recording layer and an overcoat of selenium from 5 to 60.ANG. thick.