Abstract: A polyester is formed by reacting a plurality of monomers. The monomers include 7 to 20 parts by mole of (a) aliphatic triol monomer, 40 to 80 parts by mole of (b) first diol monomer, 12 to 40 parts by mole of (c) second diol monomer, and 100 parts by mole of (d) aliphatic diacid monomer or aliphatic anhydride monomer. The (b) first diol monomer has a chemical structure of wherein each R1 is the same. The (c) second diol monomer has a chemical structure of wherein R6 is different from R7.

Abstract: A stackable raising seedling device has a device body and a floating planting board. The device body has raising seeding hole parts disposed at intervals and holes disposed intervals. The raising seeding hole pans and the holes are staggered in parallel and with each other along a first direction, the raising seeding hole part and the holes are staggered in parallel with each other along a second direction, and the holes of the first direction and the raising seeding hole parts of the second direction are adjacently arranged. The raising seeding hole pan can receive a culture medium layer, the culture medium layer has an agar gel, and the agar gel is composed of a plant growth nutrient, agar powder and water. The present disclosure improves the overall seed germination rate and the quality of planted crops when massively planting the planted crops.

Abstract: The present disclosure relates to a culture medium having an agar gel forming by at least one plant growth nutrient, agar powder and water, wherein the agar gel is 100 wt %. A culture medium manufacturing method, a culture medium structure and a culture medium structure usage method are also illustrated in the present disclosure. The culture medium structure has a culture medium of the above culture medium, a seeding board for receiving the culture medium layer, wherein the seeding board has a hollow body which has a top hole, a bottom hole opposite to the top hole and a top base disposed on a top peripheral of the hollow body, and the hollow body and the top base are integrally formed. Via the culture medium of the solid agar gel having the plant growth nutrient, growth health and quality of crops are enhanced.

Abstract: A new method of planarizing an integrated circuit is achieved. The dielectric layers between the conductive layers of an integrated circuit are formed and planarized via A first silicon oxide layer is deposited over the metal layer. This is covered with a spin-on-glass layer. This layer is dried by baking. The spin-on-glass layer is now fully cured. The cured spin-on-glass layer is now ion implanted under the conditions of between about 1E15 to 1E17 atoms/cm.sup.2 and energy between about 50 to 100 KeV. A silicon oxide layer is deposited thereover. Via openings are now made through the silicon oxide layers and the spin-on-glass layer and filled with metal. This results in excellent planarity with no poisoned via problems. Most importantly, this method can be used for submicron technologies having conductor lines which are spaced from one another by submicron feature size and can be processed without the use of an etch-back process for the cured spin on and glass layer.