Patents by Inventor Wen-Yang Hsu

Wen-Yang Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Oscillator circuit and related method
    Patent number: 9306495
    Abstract: A device includes a first pin configured to connect to a first terminal of a resonator, a second pin configured to connect to a second terminal of a resonator, a gain stage having a first terminal electrically connected to the first pin, and a voltage drop circuit. The voltage drop circuit includes a first transistor having an input terminal electrically connected to a second terminal of the gain stage, and a second transistor having an input terminal electrically connected to an output terminal of the first transistor, and an output terminal electrically connected to the second pin.
    Type: Grant
    Filed: January 31, 2014
    Date of Patent: April 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Guan-Yu Chen, Wen-Yang Hsu
  • Oscillator Circuit and Related Method
    Publication number: 20150222229
    Abstract: A device includes a first pin configured to connect to a first terminal of a resonator, a second pin configured to connect to a second terminal of a resonator, a gain stage having a first terminal electrically connected to the first pin, and a voltage drop circuit. The voltage drop circuit includes a first transistor having an input terminal electrically connected to a second terminal of the gain stage, and a second transistor having an input terminal electrically connected to an output terminal of the first transistor, and an output terminal electrically connected to the second pin.
    Type: Application
    Filed: January 31, 2014
    Publication date: August 6, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Guan-Yu Chen, Wen-Yang Hsu
  • HIGH VOLTAGE PROTECTION APPARATUS AND METHOD
    Publication number: 20140268457
    Abstract: An apparatus includes first and second switches. The first switch is for coupling a first node to a second node responsive to a first control signal having a first value, and for decoupling these nodes responsive to the first control signal having a second value. The second switch is for coupling the first node to a third node responsive to a second control signal having the first value, and for decoupling these nodes responsive to the second control signal having the second value. A load is coupled between the second and third nodes. A detection circuit coupled to the first node is configured to generate a signal indicating whether voltage at the first node exceeds a threshold. First and second modules are configured to set the first and second control signals to the second value responsive to the signal indicating that the voltage at the first node exceeds the threshold.
    Type: Application
    Filed: March 14, 2013
    Publication date: September 18, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Yang HSU, Chien-Yuan LEE
  • High voltage protection apparatus and method
    Patent number: 8829947
    Abstract: An apparatus includes first and second switches. The first switch is for coupling a first node to a second node responsive to a first control signal having a first value, and for decoupling these nodes responsive to the first control signal having a second value. The second switch is for coupling the first node to a third node responsive to a second control signal having the first value, and for decoupling these nodes responsive to the second control signal having the second value. A load is coupled between the second and third nodes. A detection circuit coupled to the first node is configured to generate a signal indicating whether voltage at the first node exceeds a threshold. First and second modules are configured to set the first and second control signals to the second value responsive to the signal indicating that the voltage at the first node exceeds the threshold.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: September 9, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Wen-Yang Hsu, Chien-Yuan Lee