Patents by Inventor Wen-Yang Huang

Wen-Yang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12261133
    Abstract: A method is provided for forming an integrated circuit (IC) chip package structure. The method includes: providing an interposer having a front surface and a back surface, the interposer comprising a substrate, at least one routing region, and at least one non-routing region; forming at least one warpage-reducing trench in the at least one non-routing region, wherein the at least one warpage-reducing trench extends from the front surface of the interposer to a first depth, the first depth smaller than a thickness between the front surface and the back surface of the interposer; depositing a warpage-relief material in the at least one warpage-reducing trench; and bonding the group of IC dies to the front surface of the interposer.
    Type: Grant
    Filed: April 8, 2024
    Date of Patent: March 25, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Yang Hsieh, Chien-Chang Lee, Chia-Ping Lai, Wen-Chung Lu, Cheng-Kang Huang, Mei-Shih Kuo, Chih-Ai Huang
  • Patent number: 12218186
    Abstract: A device structure according to the present disclosure includes a metal-insulator-metal (MIM) stack that includes a plurality of conductor plate layers interleaved by a plurality of insulator layers. The MIM stack includes a first region and a second region and the first region and the second region overlaps in a third region. The MIM stack further includes a first via passing through the first region and electrically coupled to a first subset of the plurality of conductor plate layers, a second via passing through the second region and electrically coupled to a second subset of the plurality of conductor plate layers, and a ground via passing through the third region and electrically coupled to a third subset of the plurality of conductor plate layers.
    Type: Grant
    Filed: February 7, 2022
    Date of Patent: February 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Chiung Tu, Hsiang-Ku Shen, Yuan-Yang Hsiao, Tsung-Chieh Hsiao, Chen-Chiu Huang, Dian-Hau Chen
  • Patent number: 12057521
    Abstract: This disclosure relates to a superlattice structure, an LED epitaxial structure, a display device, and a method for manufacturing the LED epitaxial structure. The superlattice structure includes at least two superlattice units which are grown in stacking layers. Each of the at least two superlattice units includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer which are grown in stacking layers. The first n-type GaN layer has a doping concentration which is constant along a growth direction, the second n-type GaN layer has a doping concentration which gradually increases along the growth direction, the first n-type GaInN layer has a doping concentration which gradually decreases along the growth direction, and the second n-type GaInN layer has a doping concentration which is constant along the growth direction.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: August 6, 2024
    Assignee: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
    Inventors: Wen Yang Huang, Ya-Wen Lin, Kuo-Tung Huang, Chia-Hung Huang, Shun-Kuei Yang
  • Publication number: 20210367100
    Abstract: This disclosure relates to a superlattice structure, an LED epitaxial structure, a display device, and a method for manufacturing the LED epitaxial structure. The superlattice structure includes at least two superlattice units which are grown in stacking layers. Each of the at least two superlattice units includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer which are grown in stacking layers. The first n-type GaN layer has a doping concentration which is constant along a growth direction, the second n-type GaN layer has a doping concentration which gradually increases along the growth direction, the first n-type GaInN layer has a doping concentration which gradually decreases along the growth direction, and the second n-type GaInN layer has a doping concentration which is constant along the growth direction.
    Type: Application
    Filed: June 14, 2021
    Publication date: November 25, 2021
    Inventors: Wen Yang HUANG, Ya-Wen LIN, Kuo-Tung HUANG, Chia-Hung HUANG, Shun-Kuei YANG
  • Publication number: 20170275349
    Abstract: The present invention provides a recombinant chicken interleukin-1? protein for producing antibody early and retaining for a longer period of time, which has a sequence of SEQ ID NO:2 or SEQ ID NO:3. The recombinant chicken interleukin-1? protein is created by using point mutation in a genetic engineering method; it can significantly improve the original vaccine efficacy to enhance antibody responses, produce antibody one week earlier and extend the protective effect until chickens sold off. Therefore, the recombinant chicken interleukin-1? protein of the present invention can produce significant higher antibody responses than the with-type chicken interleukin-1? protein, it helps to develop avian interleikin-1? vaccine adjuvant and uses in medical application and livestock production.
    Type: Application
    Filed: May 12, 2016
    Publication date: September 28, 2017
    Inventors: Hsien-Sheng Yin, Wen-Ting Chen, Wen-Yang Huang