Patents by Inventor Wen-Yang Huang

Wen-Yang Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12057521
    Abstract: This disclosure relates to a superlattice structure, an LED epitaxial structure, a display device, and a method for manufacturing the LED epitaxial structure. The superlattice structure includes at least two superlattice units which are grown in stacking layers. Each of the at least two superlattice units includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer which are grown in stacking layers. The first n-type GaN layer has a doping concentration which is constant along a growth direction, the second n-type GaN layer has a doping concentration which gradually increases along the growth direction, the first n-type GaInN layer has a doping concentration which gradually decreases along the growth direction, and the second n-type GaInN layer has a doping concentration which is constant along the growth direction.
    Type: Grant
    Filed: June 14, 2021
    Date of Patent: August 6, 2024
    Assignee: CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
    Inventors: Wen Yang Huang, Ya-Wen Lin, Kuo-Tung Huang, Chia-Hung Huang, Shun-Kuei Yang
  • Publication number: 20210367100
    Abstract: This disclosure relates to a superlattice structure, an LED epitaxial structure, a display device, and a method for manufacturing the LED epitaxial structure. The superlattice structure includes at least two superlattice units which are grown in stacking layers. Each of the at least two superlattice units includes a first n-type GaN layer, a second n-type GaN layer, a first n-type GaInN layer, and a second n-type GaInN layer which are grown in stacking layers. The first n-type GaN layer has a doping concentration which is constant along a growth direction, the second n-type GaN layer has a doping concentration which gradually increases along the growth direction, the first n-type GaInN layer has a doping concentration which gradually decreases along the growth direction, and the second n-type GaInN layer has a doping concentration which is constant along the growth direction.
    Type: Application
    Filed: June 14, 2021
    Publication date: November 25, 2021
    Inventors: Wen Yang HUANG, Ya-Wen LIN, Kuo-Tung HUANG, Chia-Hung HUANG, Shun-Kuei YANG
  • Publication number: 20170275349
    Abstract: The present invention provides a recombinant chicken interleukin-1? protein for producing antibody early and retaining for a longer period of time, which has a sequence of SEQ ID NO:2 or SEQ ID NO:3. The recombinant chicken interleukin-1? protein is created by using point mutation in a genetic engineering method; it can significantly improve the original vaccine efficacy to enhance antibody responses, produce antibody one week earlier and extend the protective effect until chickens sold off. Therefore, the recombinant chicken interleukin-1? protein of the present invention can produce significant higher antibody responses than the with-type chicken interleukin-1? protein, it helps to develop avian interleikin-1? vaccine adjuvant and uses in medical application and livestock production.
    Type: Application
    Filed: May 12, 2016
    Publication date: September 28, 2017
    Inventors: Hsien-Sheng Yin, Wen-Ting Chen, Wen-Yang Huang