Patents by Inventor Wen-Yaw Chung
Wen-Yaw Chung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180312791Abstract: A reaction device for a tiny organism includes a chamber, a first support plate, a second support plate and a separation plate. The tiny organism and a culture medium are added in the chamber. The first support plate is disposed on an opening of the chamber. The second support plate is disposed on one side opposite to the side on which the first support plate is disposed, and a third hole and a fourth hole separately correspond to a first hole and a second hole of the first support plate. A first end of the separation plate is located inside the chamber, the first end of the separation plate is spaced from the bottom of the chamber by a predetermined distance, a second end of the separation plate passes through the first support plate to connect to the second support plate.Type: ApplicationFiled: December 5, 2017Publication date: November 1, 2018Inventors: Yu-Tzu Huang, Wen-Yaw Chung, Bo-Wei Wu, Jyun-Ting Lai, Jie-Ru Xu
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Patent number: 8137520Abstract: A chloride ion-selective electrode comprises: a reference electrode in contact with a reference solution; and a chloride ion-selective membrane as the interface of a sample and the reference solution, wherein the chloride-ion selective membrane comprises a chloride ion ionophore, a chloride ion-exchange resin, a plasticizer, and a polymer matrix.Type: GrantFiled: December 15, 2010Date of Patent: March 20, 2012Assignee: Chung Yuan Christian UniversityInventors: Chean-Yeh Cheng, Wen-Yaw Chung, Zhu-Ming Huang
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Patent number: 7919959Abstract: A signal readout circuit comprises a first amplifier, a second amplifier and first to fourth transistors. The signal readout circuit has a first electrode, a second electrode, and a third electrode. The signal readout circuit applied in a wide current-sensing range of amperometric chemical sensing. The readout circuit may be applied in electrochemical sensing such as glucose, so as to read out a current signal of an amperometric sensor. Through a design of low input impedance, sensing signals in a wide current range can be sensed in the readout circuit. Also, a current mirror structure is used to copy the input current to an output current, such that an output signal range of the output signals of the current circuit is not limited by a supplied voltage.Type: GrantFiled: December 1, 2009Date of Patent: April 5, 2011Assignee: Chung Yuan Christian UniversityInventors: Wen-Yaw Chung, Shao-Chun Cheng, Chiung-Cheng Chuang, Febus-Reidj Guinto Cruz, Dorota Genowefa Pijanowska
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Publication number: 20100308796Abstract: A signal readout circuit comprises a first amplifier, a second amplifier and first to fourth transistors. The signal readout circuit has a first electrode, a second electrode, and a third electrode. The signal readout circuit applied in a wide current-sensing range of amperometric chemical sensing. The readout circuit may be applied in electrochemical sensing such as glucose, so as to read out a current signal of an amperometric sensor. Through a design of low input impedance, sensing signals in a wide current range can be sensed in the readout circuit. Also, a current mirror structure is used to copy the input current to an output current, such that an output signal range of the output signals of the current circuit is not limited by a supplied voltage.Type: ApplicationFiled: December 1, 2009Publication date: December 9, 2010Applicant: CHUNG YUAN CHRISTIAN UNIVERSITYInventors: Wen Yaw Chung, Shao Chun Cheng, Chiung Cheng Chuang, Febus Reidj Guinto Cruz, Pijanowska Genowefa Dorota
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Patent number: 7663357Abstract: A signal readout circuit for amperometric sensor for reading a readout signal of a sensor includes an amplifier, a first transistor, a second transistor, and a first resistor. A negative input end of the amplifier receives an input voltage, and a positive input end of the amplifier is connected to a reference electrode of the sensor. Gates of the first transistor and the second transistor are connected to an output end of the amplifier, a drain of the first transistor is connected to a counter electrode of the sensor, and a drain of the second transistor is connected to the first resistor.Type: GrantFiled: November 27, 2007Date of Patent: February 16, 2010Assignee: Chung Yuan Christian UniversityInventors: Wen-Yaw Chung, Tsai-Tseng Kuo, Ying-Hsian Wang, Dorota Genowefa Pijanowska, Wladyslaw Torbicz
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Patent number: 7638157Abstract: A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A ?-D-glucose oxidase and polyvinyl alcohol bearing styrylpyridinium groups are placed in 100 ?l of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.Type: GrantFiled: September 19, 2006Date of Patent: December 29, 2009Assignee: Chung Yuan Christian UniversityInventors: Shen-Kan Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Li-Te Yin, Chung-We Pan
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Publication number: 20090039922Abstract: A multi-level comparator with fixed power consumption is disclosed. By using the switch character of differential pair and parallelizing single side of common source amplifier with multi-level input, the power of the multi-level comparator can be fixed by the current bias. This result shows that the multi-level comparator is able to heighten input stages at fixed power. Therefore, the multi-level comparator has the functionalities of several different comparators while maintaining fixed power consumption.Type: ApplicationFiled: March 28, 2008Publication date: February 12, 2009Applicant: CHUNG YUAN CHRISTIAN UNIVERSITYInventors: Ying-Hsiang WANG, Wen-Yaw CHUNG, Chiung-Cheng CHUANG, Chien-Yi KAO
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Publication number: 20080169800Abstract: A signal readout circuit for amperometric sensor for reading a readout signal of a sensor includes an amplifier, a first transistor, a second transistor, and a first resistor. A negative input end of the amplifier receives an input voltage, and a positive input end of the amplifier is connected to a reference electrode of the sensor. Gates of the first transistor and the second transistor are connected to an output end of the amplifier, a drain of the first transistor is connected to a counter electrode of the sensor, and a drain of the second transistor is connected to the first resistor.Type: ApplicationFiled: November 27, 2007Publication date: July 17, 2008Inventors: Wen-Yaw Chung, Tsai-Tseng Kuo, Ying-Hsian Wang, Dorota Genowefa Pijanowska, Wladyslaw Torbicz
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Patent number: 7368917Abstract: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.Type: GrantFiled: June 12, 2006Date of Patent: May 6, 2008Assignee: Chung Yuan Christian UniversityInventors: Wen-Yaw Chung, Chung-Huang Yang, Dorota Genowefa Pijanowska, Piotr Grabiec, Bohdan Jaroszewicz, Wladyslaw Torbicz
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Publication number: 20070089988Abstract: An electronic circuit for ion sensor with the body effect reduction includes a bridge-type floating source circuit provided with an input terminal, an output terminal reflecting the change in the potential dependent on ion concentration, and an ion-sensitive field effect transistor (ISFET) wherein one terminal of the ISFET is coupled with the output terminal; a current mirror for providing a current to the bridge-type circuit; a third transistor for receiving the operating current provided by the current mirror, identical to the current provided to the ISFET; a differential amplifying circuit, wherein one input terminal of the amplifying circuit is input with a reference voltage, and the other input terminal is coupled with the output of the bridge-type readout circuit; and a third amplifier to generate a differential output voltage compensated for the body effect, temperature and time drift effects.Type: ApplicationFiled: June 12, 2006Publication date: April 26, 2007Inventors: Wen-Yaw Chung, Chung-Huang Yang, Dorota Genowefa Pijanowska, Piotr Grabiec, Bohdan Jaroszewicz, Wladyslaw Torbicz
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Publication number: 20070023286Abstract: A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A ?-D-glucose oxidase and polyvinylalchol bearing styrylpyridinium groups are placed in 100 ?l of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.Type: ApplicationFiled: September 19, 2006Publication date: February 1, 2007Applicant: CHUNG YUAN CHRISTIAN UNIVERSITYInventors: Shen-Kan Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Li-Te Yin, Chung-We Pan
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Patent number: 6974716Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.Type: GrantFiled: March 17, 2004Date of Patent: December 13, 2005Assignee: Chung Yuan Christian UniversityInventors: Stephen S. K. Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Yuan-Lung Chin, Lei Zhen Ce
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Patent number: 6906524Abstract: An ion sening circuit comprises a bridge sensing circuit and a differential amplifying circuit. The bridge sensing circuit detects the ion concentration of the solution in the operation mode of constant voltage and constant current. The differential amplifying circuit compares the output of the bridge sensing circuit and a floating reference voltage, thereby the delivered voltage to the bridge sensing circuit, such that the opeation mode of constant voltage and constant current is formed accordingly. The main features of the disclosed circuit are that it grounds the reference electrode and floats the source terminal. The drawbacks of not being manufactured with intergrated circuits by CMOS technology and low benefits when applied to sensor arrays are avoided by the disclosed circuit.Type: GrantFiled: August 26, 2003Date of Patent: June 14, 2005Assignee: Chung-Yuan Christian UniversityInventors: Wen-Yaw Chung, Alfred Krzyskow, Yeong-Tsair Lin, Dorota Genowefa Pijanowska, Chung-Huang Yang, Wladyslaw Torbicz
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Patent number: 6897081Abstract: A method for fabricating a monolithic chip including multi-sensors that can detect pH, temperature, photo-intensity simultaneously and a readout circuit. As such, as well as the multi-sensors, the readout circuit also has a reduced chip area at low cost since selection switches are used to sequentially read pH, temperature and photo-intensity detecting values, wherein the readout action is completed within a clock cycle. The entire structure is fabricated with standard 0.5 ?m CMOS IC, Double Poly Double Metal (DPDM), n-well technology and allows the integration of the on-chip signal conditioning circuitry. The chip fabricated by the method can not only sense the Ph, temperature, photo values but also apply the extended gate field effect transistor (EGFET) on the temperature and light compensation to produce realistic pH values.Type: GrantFiled: January 23, 2003Date of Patent: May 24, 2005Assignee: Chung Yuan Christian UniversityInventors: Stephen S. K. Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Yuan-Lung Chin, Chung-We Pan
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Publication number: 20040223287Abstract: An ion sening circuit comprises a bridge sensing circuit and a differential amplifying circuit. The bridge sensing circuit detects the ion concentration of the solution in the operation mode of constant voltage and constant current. The differential amplifying circuit compares the output of the bridge sensing circuit and a floating reference voltage, thereby the delivered voltage to the bridge sensing circuit, such that the opeation mode of constant voltage and constant current is formed accordingly. The main features of the disclosed circuit are that it grounds the reference electrode and floats the source terminal. The drawbacks of not being manufactured with intergrated circuits by CMOS technology and low benefits when applied to sensor arrays are avoided by the disclosed circuit.Type: ApplicationFiled: August 26, 2003Publication date: November 11, 2004Inventors: Wen-Yaw Chung, Alfred Krzyskow, Yeong-Tsair Lin, Dorota Genowefa Pijanowska, Chung-Huang Yang, Wladyslaw Torbicz
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Publication number: 20040185591Abstract: A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.Type: ApplicationFiled: March 17, 2004Publication date: September 23, 2004Inventors: Stephen S.K. Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Yuan-Lung Chin, Lei Zhen Ce
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Publication number: 20040077116Abstract: A method for fabricating a monolithic chip including multi-sensors that can detect pH, temperature, photo-intensity simultaneously and a readout circuit. As such, as well as the multi-sensors, the readout circuit also has a reduced chip area at low cost since selection switches are used to sequentially read pH, temperature and photo-intensity detecting values, wherein the readout action is completed within a clock cycle. The entire structure is fabricated with standard 0.5 &mgr;m CMOS IC, Double Poly Double Metal (DPDM), n-well technology and allows the integration of the on-chip signal conditioning circuitry. The chip fabricated by the method can not only sense the Ph, temperature, photo values but also apply the extended gate field effect transistor (EGFET) on the temperature and light compensation to produce realistic pH values.Type: ApplicationFiled: January 23, 2003Publication date: April 22, 2004Inventors: Stephen S. K. Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen-Yaw Chung, Yuan-Lung Chin, Chung-We Pan
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Publication number: 20040035699Abstract: In this invention, a potentiometric electrochemical sensor and biosensor based on an uninsulated solid-state material was presented.Type: ApplicationFiled: November 5, 2002Publication date: February 26, 2004Inventors: Shen-Kan Hsiung, Jung Chuan Chou, Tai-Ping Sun, Wen Yaw Chung, Yin Li-Te, Chung We Pan
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Patent number: 6236075Abstract: The present invention discloses a method of forming a metal layer by thermal evaporation or RF reactive sputtering in order to fabricate a light shielding layer for an ion sensitive field effect transistor. The multi-layered construction of the ion sensitive field effect transistor with a metal thin film as a light shielding layer is SnO2/metal/SiO2 or SnO2/metal/Si3N4/SiO2, and is able to lower the effect of light successfully.Type: GrantFiled: March 10, 1999Date of Patent: May 22, 2001Assignee: National Science CouncilInventors: Shen-Kan Hsiung, Jung-Chuan Chou, Tai-Ping Sun, Wen Yaw Chung, Hung-Kwei Liao, Chung-Lin Wu
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Patent number: 6218208Abstract: A sensitive material-tin oxide (SnO2) obtained by thermal evaporation or by r.f. reactive sputtering is used as a high-pH-sensitive material for a Multi-Structure Ion Sensitive Field Effect Transistor. The multi-structure of this Ion Sensitive Field Effect Transistor (ISFET) includes SnO2/SiO2 gate ISFET or SnO2/Si3N4/SiO2 gate ISFET respectively, and which have high performances such as a linear pH sensitivity of approximately 56˜58 mV/pH in a concentration range between pH2 and pH10. A low drift characteristics of approximately 5 mv/day, response time is less than 0.1 second, and an isothermal point of this ISFET sensor can be obtained if the device operates with an adequate drain-source current. In addition, this invention has other advantages, such as the inexpensive fabrication system, low cost, and mass production characteristics. Based on these characteristics, a disposal sensing device can be achieved. Thus, this invention has a high feasibility in Ion Sensitive Field Effect Transistor.Type: GrantFiled: July 2, 1999Date of Patent: April 17, 2001Assignee: National Science CouncilInventors: Jung-Chuan Chou, Wen-Yaw Chung, Shen-Kan Hsiung, Tai-Ping Sun, Hung-Kwei Liao