Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.

Abstract: A biaxially stretched polyester film and a method for producing the same are provided. The biaxially stretched polyester film includes a polyester resin base layer and a matte layer. The polyester resin base layer includes: (1) 50 to 95 wt % of a polyester resin base material, and an intrinsic viscosity of the polyester resin base material being between 0.5 and 0.8 dL/g; and (2) 0.01 to 5 wt % of a high viscosity polyester resin material, and an intrinsic viscosity of the high viscosity polyester resin material being between 0.9 and 1.1 dL/g. The matte layer includes: (1) 50 to 95 wt % of a polyester resin matrix material, and an intrinsic viscosity of the polyester resin matrix material being between 0.5 and 0.8 dL/g; and (2) 0.3 to 40 wt % of a plurality of filler particles, and the filler particles having an average particle size of between 0.15 ?m and 10 ?m.

Abstract: Disclosed are methods and systems for a WLAN device operating on DFS channels to calibrate the PRI as well as delays between partial pulses of received radar pulses that are impaired due to channel and filtering effects. The calibrated PRI may approximate the PRI of the transmitted pulses. The calibrated delay between the partial pulses estimates the interval between two partial pulses that originally belong to the same transmitted pulse. Using the calibrated PRI and the calibrated delay between partial pulses, the WLAN device may reconstruct the original pulses from received impaired pulses even when the impaired pulses are delayed and partial pulses of the original pulses. The WLAN device may use the calibrated results to correct the shortened PW and varying PRI of the impaired pulses to restore the partial pulses to their full PW with a relatively uniform PRI, increasing the probability of detecting the radar signals.

Abstract: Disclosed are methods and systems for a WLAN device operating on DFS channels to calibrate the PRI as well as delays between partial pulses of received radar pulses that are impaired due to channel and filtering effects. The calibrated PRI may approximate the PRI of the transmitted pulses. The calibrated delay between the partial pulses estimates the interval between two partial pulses that originally belong to the same transmitted pulse. Using the calibrated PRI and the calibrated delay between partial pulses, the WLAN device may reconstruct the original pulses from received impaired pulses even when the impaired pulses are delayed and partial pulses of the original pulses. The WLAN device may use the calibrated results to correct the shortened PW and varying PRI of the impaired pulses to restore the partial pulses to their full PW with a relatively uniform PRI, increasing the probability of detecting the radar signals.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask layer to form a first opening, where in a plan view a major axis of the opening extends in a direction that is perpendicular to a major axis of a spacer of the plurality of spacers. The method also includes depositing a sacrificial material in the opening, patterning the sacrificial material, etching the first mask layer using the plurality of spacers and the patterned sacrificial material, etching the target layer using the etched first mask layer to form second openings in the target layer, and filling the second openings in the target layer with a conductive material.

Abstract: A viewing angle control device including a plurality of first polarizing portions and a plurality of transmissive portions is provided. The first polarizing portions are arranged along a first direction and extended in a second direction. The transmissive portions and the first polarizing portions are alternately arranged. Each of the first polarizing portions has a width in the first direction and a height in a direction perpendicular to the first direction and the second direction. A ratio of the height to the width of the first polarizing portion is greater than 1. A display apparatus adopting the viewing angle control device is also provided. The viewing angle control device and the display apparatus provided herein have a filter effect at a large viewing angle, improved light transmittance in the viewing angle direction, and excellent anti-peeping performance.

Abstract: A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.

Abstract: A biaxially stretched polyester film and a method for producing the same are provided. The biaxially stretched polyester film includes a polyester resin base layer and a matte layer formed on the polyester resin base layer. The matte layer has a total weight of 100 wt %, and the matte layer includes: (1) 50 to 95 wt % of a polyester resin matrix, an intrinsic viscosity of the polyester resin matrix being between 0.5 and 0.8 dL/g; (2) 0.01 to 5 wt % of a high viscosity polyester resin, an intrinsic viscosity of the high viscosity polyester resin being between 0.9 and 1.1 dL/g; (3) 0.3 to 40 wt % of a plurality of filler particles, the filler particles having an average particle size of between 0.15 and 10 ?m.

Abstract: A view angle control structure and a display apparatus are provided. The display apparatus at least includes the view angle control structure, which includes first and second polarizing layers, first and second substrates and a polarization adjusting layer. The first and second polarizing layers are sequentially disposed on a transmission path of a light beam. The first and second substrates are sequentially disposed on the transmission path of the light beam and located between the first and second polarizing layers. At least one of the first and second substrates has a birefringence. The polarization adjusting layer is disposed on the transmission path of the light beam and located between the first and second substrates for changing a polarization state of the light beam according to an applied voltage. The view angle control structure and the display apparatus of the invention are excellent in anti-peeping effect, slimness and image quality.

Abstract: An eye tracking apparatus and an image capture module thereof for capturing an iris image are provided. The image capture module includes a carrier, a light source and an image sensing unit. The light source and the image sensing unit are both disposed on the carrier and fastened ahead of the eye by carrier. The light source emits a light beam to the eye, and the image sensing unit receives the light beam reflected from the eye to capture the iris image. The light source and the image sensing unit are arranged at two different sides of a longitudinal reference plane.

Abstract: A touch display panel includes a touch circuit, a touch electrode layer and a plurality of multiplexers. The touch electrode layer includes a plurality of first electrodes. Each of the multiplexers is electrically connected to the touch circuit and the first electrodes. Each of the multiplexers is configured to output a touch sensing signal, a first guarding signal and a second guarding signal according to a first guarding control signal, a second guarding control signal, a first touch control signal, and a second touch control signal.

Abstract: A method for preparing a wear-resistant hybrid, includes (A) providing nano-silica with hydroxyl groups on its surface to react with an isocyanate-based silane to form silica with silyl groups; (B) subjecting the silica with silyl groups to a hydrolytic condensation reaction by using a sol-gel technology to form highly bifurcated Si-HB nanoparticles with hydroxyl groups; (C) providing a diisocyanate to react with a polyol to form a urethane pre-polymer; and (D) subjecting the Si-HB nanoparticles with hydroxyl groups to an addition reaction with the urethane pre-polymer and with a chain-extending reagent to form a hybrid of Si-polyurethane (PU/Si-HB), whereby a wear-resistant hybrid of Si-polyurethane is prepared.

Abstract: A support structure for a medicament container is disclosed that is arranged to accommodate an elongated plunger rod, where the support structure has at least one flexible element arranged to be moved in contact with, and to exert a force, on a distal end surface of the medicament container, wherein the at least one flexible element is provided with a contact member arranged to contact an outer surface of the plunger rod and to be moved out of contact with the plunger rod when moved in contact with the medicament container.

Abstract: A method for preparing a wear-resistant hybrid, includes (A) providing nano-silica with hydroxyl groups on its surface to react with an isocyanate-based silane to form silica with silyl groups; (B) subjecting the silica with silyl groups to a hydrolytic condensation reaction by using a sol-gel technology to form highly bifurcated Si-HB nanoparticles with hydroxyl groups; (C) providing a diisocyanate to react with a polyol to form a urethane pre-polymer; and (D) subjecting the Si-HB nanoparticles with hydroxyl groups to an addition reaction with the urethane pre-polymer and with a chain-extending reagent to form a hybrid of Si-polyurethane (PU/Si-HB), whereby a wear-resistant hybrid of Si-polyurethane is prepared.

Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask layer to form a first opening, where in a plan view a major axis of the opening extends in a direction that is perpendicular to a major axis of a spacer of the plurality of spacers. The method also includes depositing a sacrificial material in the opening, patterning the sacrificial material, etching the first mask layer using the plurality of spacers and the patterned sacrificial material, etching the target layer using the etched first mask layer to form second openings in the target layer, and filling the second openings in the target layer with a conductive material.

Abstract: A semiconductor device includes a substrate having a first region and a second region and a gate structure on the first region and the second region of the substrate. The gate structure includes a first bottom barrier metal (BBM) layer on the first region and the second region, a first work function metal (WFM) layer on the first region; and a diffusion barrier layer on a top surface and a sidewall of the first WFM layer on the first region and the first BBM layer on the second region. Preferably, a thickness of the first BBM layer on the second region is less than a thickness of the first BBM layer on the first region.