Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses an electrostatic discharge (ESD) protection device and a manufacturing method thereof. The ESD protection device includes: a P-type well, a gate structure, an N-type source, an N-type drain, and a P-type lightly doped drain. The P-type lightly doped drain is formed in the P-type well, and at least part of the P-type lightly doped drain is beneath a spacer of the gate structure to reduce a trigger voltage of the electrostatic discharge protection device.

Abstract: The present invention discloses a double diffused drain metal oxide semiconductor (DDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes: a drift region, a gate, a source, a drain, a dielectric layer, and a conductive layer. The drift region includes a first region and a second region. The gate is formed on the substrate, and overlaps the first region from top view. The source and drain are formed at both sides of the gate respectively, and the drain is located in the second region. The drain and the gate are separated by a portion of the second region from top view. The dielectric layer is formed by dielectric material on the gate and the second region. The conductive layer is formed by conductive material on the dielectric layer, and overlaps at least part of the second region from top view.

Abstract: The present invention discloses a double diffused drain metal oxide semiconductor (DDMOS) device and a manufacturing method thereof. The DDDMOS device is formed in a substrate, and includes: a drift region, a gate, a source, a drain, a dielectric layer, and a conductive layer. The drift region includes a first region and a second region. The gate is formed on the substrate, and overlaps the first region from top view. The source and drain are formed at both sides of the gate respectively, and the drain is located in the second region. The drain and the gate are separated by a portion of the second region from top view. The dielectric layer is formed by dielectric material on the gate and the second region. The conductive layer is formed by conductive material on the dielectric layer, and overlaps at least part of the second region from top view.