Abstract: A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.

Abstract: A method for forming a liquid crystal display is disclosed. A substrate comprising a thin film transistor area and a pixel area is provided. A gate line, a gate dielectric layer, an active layer and a doped layer are formed overlying the substrate sequentially. A metal layer is formed overlying the doped layer. The metal layer, doped layer and the active layer in the thin film transistor area are defined to form a thin film transistor. The metal layer in the pixel area is defined to form a first metal portion of a first thickness and a second metal portion of a second portion, wherein the first metal portion acts as a contact region, the first thickness exceeds the second thickness, and the second thickness is sufficient to partially reflect and partially transmit incident light to form a transflective region in the pixel area.

Abstract: A liquid crystal display comprises a substrate comprising a thin film transistor area and a pixel area, a gate line formed on the substrate, a gate dielectric layer formed on the gate line and the substrate, an active layer formed on the gate dielectric layer, a doped layer formed on the active layer, a metal layer formed on the doped layer, a passivation layer overlaying the thin film transistor area and the pixel area, and a pixel electrode layer formed on the passivation layer. The gate line, the gate dielectric layer, the active layer, the doped layer and the metal layer in the thin film transistor area constitute a thin film transistor. The metal layer in the pixel area comprises a contact portion and a metal portion which is thick enough to partially transmit and partially reflect incident light to form a transflective region.

Abstract: A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.

Abstract: A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.

Abstract: A method for forming a liquid crystal display is disclosed. A substrate comprising a thin film transistor area and a pixel area is provided. A gate line, a gate dielectric layer, an active layer and a doped layer are formed overlying the substrate sequentially. A metal layer is formed overlying the doped layer. The metal layer, doped layer and the active layer in the thin film transistor area are defined to form a thin film transistor. The metal layer in the pixel area is defined to form a first metal portion of a first thickness and a second metal portion of a second portion, wherein the first metal portion acts as a contact region, the first thickness exceeds the second thickness, and the second thickness is sufficient to partially reflect and partially transmit incident light to form a transflective region in the pixel area.

Abstract: A liquid crystal display comprises a substrate comprising a thin film transistor area and a pixel area, a gate line formed on the substrate, a gate dielectric layer formed on the gate line and the substrate, an active layer formed on the gate dielectric layer, a doped layer formed on the active layer, a metal layer formed on the doped layer, a passivation layer overlaying the thin film transistor area and the pixel area, and a pixel electrode layer formed on the passivation layer. The gate line, the gate dielectric layer, the active layer, the doped layer and the metal layer in the thin film transistor area constitute a thin film transistor. The metal layer in the pixel area comprises a contact portion and a metal portion which is thick enough to partially transmit and partially reflect incident light to form a transflective region.

Abstract: A thin film transistor array substrate is disclosed. A gate electrode is disposed overlying a substrate. A gate dielectric layer covers the substrate and the gate electrode. A semiconductor layer is disposed overlying the gate dielectric layer, wherein the semiconductor layer comprises a channel. A source electrode electrically connects a portion of the semiconductor layer on one side of the channel, and a drain electrode electrically connects a portion of the semiconductor layer on the other side of the channel, in which the drain electrode does not overlap the gate electrode.