Abstract: A fusion protein is disclosed. The fusion protein of the invention comprises an Fc fragment of an immunoglobulin G and a bioactive molecule, wherein the Fc is a single chain Fc. The amino acids in the hinge of the Fc is mutated, substituted, or deleted so that the hinge of Fc cannot form disulfide bonds. Methods for producing and using the fusion protein of the invention are also provided.

Abstract: A chassis with built-in handles which do not add to dimensional clearance required for the chassis to be placed in a cavity includes a side plate, a mounting unit, and a handle. A mounting groove is defined on the side plate. The mounting unit is coupled to the side plate. The handle is partially clamped by the side plate and the mounting unit, and rotatably coupled with the side plate. By rotating the handle, the handle can be stored at least flush in the mounting groove.

Abstract: A locking assembly can lock a workpiece. The workpiece includes a locking hole. The locking assembly includes a housing, a movable component, and an unlocking handle. The movable component includes a sleeve, a pin, and an unlocking cover. The sleeve is mounted on the housing. The pin is accommodated in the sleeve, and a portion of the pin protrudes from the housing and accommodated in the locking hole. The unlocking cover is fixed to the pin. The unlocking handle is disposed between the unlocking cover and the sleeve. The unlocking cover can be pulled from a first direction to move the pin out of the locking hole; or the unlocking handle can be pulled from a second direction intersecting with the first direction, and the unlocking handle can abut against the unlocking cover to drive the pin to move out of the locking hole.

Abstract: Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.

Abstract: The present application relates to the field of semiconductor manufacturing technologies, and in particular to a method and an apparatus for automatically processing wafers. The method for automatically processing the wafers includes the following steps: providing several wafers, wherein the wafers operate on a primary path, and the primary path is a path for forming semiconductor structures on the surfaces of the wafers; determining whether there is a need for detecting defects of the wafers, and if yes, automatically switching an operating path of the wafers to a secondary path; detecting the defects of the wafers in the secondary path; and determining whether the defect detection on the wafers is finished, and if yes, automatically switching the operating path of the wafers to the primary path. The application makes it possible to automatically detect the defects of the wafers with different SWR conditions, thereby improving the automation degree of machines.

Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.

Abstract: A probe head includes upper, middle and lower dies having upper, middle and lower guiding holes respectively, and a plurality of spring probes. The spring probe includes upper and lower abutting sections disposed in the upper and lower guiding holes, a spring section connecting the upper and lower abutting sections, and a barrel disposed on the periphery of the spring section and inserted in the middle guiding hole. The spring probes include adjacent first and second probes whose barrels has first and second outer diameters and are accommodated in first and second middle guiding holes having first and second widths. The difference between the first width and outer diameter and/or the difference between the second width and outer diameter is larger than or equal to 10 micrometers, and/or the difference between the first and second outer diameters is larger than or equal to 5 ?m.

Abstract: A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.

Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: The application relates to a polymerization vessel and a method for manufacturing the same. An interior surface of the polymerization vessel has a specific structure, so that the polymerization vessel has better heat transfer efficiency. Closed cooling channels are constructed from the specific structure, and therefore cooling fluid flows in the closed cooling channels. Furthermore, there won't be any by-pass defects in the cooling channels of the polymerization vessel, thereby improving cooling efficiency of the cooling fluid.

Abstract: An electronic device includes a metal back cover, a metal frame, a first antenna module and a second antenna module. The metal frame includes a first and a second disconnection portion, a first and a second connection portion. The first and the second connection portion are connected to the metal back cover. The first disconnection portion is separated from the first connection portion, the metal back cover and the second disconnection portion to form a first slot. The second disconnection portion is connected to the second connection portion and is separated from the metal back cover to form a second slot. The first antenna module is connected to the first disconnection portion, and forms a first antenna path. The second antenna module is connected to the second disconnection portion, and forms a second and a third antenna path with the second disconnection portion and the metal back cover.

Abstract: The present application relates to the field of semiconductor manufacturing technologies, and in particular to a method and an apparatus for automatically processing wafers. The method for automatically processing the wafers includes the following steps: providing several wafers, wherein the wafers operate on a primary path, and the primary path is a path for forming semiconductor structures on the surfaces of the wafers; determining whether there is a need for detecting defects of the wafers, and if yes, automatically switching an operating path of the wafers to a secondary path; detecting the defects of the wafers in the secondary path; and determining whether the defect detection on the wafers is finished, and if yes, automatically switching the operating path of the wafers to the primary path. The application makes it possible to automatically detect the defects of the wafers with different SWR conditions, thereby improving the automation degree of machines.

Abstract: A touch inductive unit includes a receiving electrode pattern and a driving electrode pattern. The receiving electrode pattern includes a first main stem, a first branch portion and a second branch portion. The first branch portion and the second branch portion are extended from the first main stem. The driving electrode pattern includes a second main stem, a third branch portion and a fourth branch portion. The third branch portion and the fourth branch portion are extended from the second main stem. The receiving electrode pattern and the driving electrode pattern are interdigitated and physically spaced apart from each other.

Abstract: A touch inductive unit includes a receiving electrode pattern and a driving electrode pattern. The receiving electrode pattern includes a first main stem, a first branch portion and a second branch portion. The first branch portion and the second branch portion are extended from the first main stem. The driving electrode pattern includes a second main stem, a third branch portion and a fourth branch portion. The third branch portion and the fourth branch portion are extended from the second main stem. The receiving electrode pattern and the driving electrode pattern are interdigitated and physically spaced apart from each other.

Abstract: A display having a frame, a touch display, and a method of manufacturing a frame are provided. The display includes a first frame, a second frame, and a display panel. The first frame includes a bottom surface, a sidewall, and a strengthened structure. The sidewall connects the bottom surface to define an accommodation space. The strengthened structure connects a terminal of the sidewall away from the bottom surface, is located at a side of the sidewall facing the accommodation space, and is substantially parallel to the sidewall. The strengthened structure has a contact surface. The contact surface faces the bottom surface and is substantially parallel to the bottom surface. The second frame is configured in the accommodation space and has a locking portion that has a locking surface leaning against the contact surface of the strengthened structure. The display panel is accommodated in the second frame.

Abstract: A magnetic roller sleeve for toner cartridge of printer, wherein the cylinder surface of the sleeve is covered with a coating layer comprising: one or more resins highly adhesive to the sleeve base material, one or more electric conducting materials, a plurality of additive agents capable of evenly distributing electric conducting materials and resins and enhancing the bond between the two, and more than one additive agents and diluting solvents that can control the adhesive time during coating in separate stage; with the unique coating of the surface layer on the magnetic roller sleeve, the life cycle and print quality of the magnetic roller sleeve can be effectively enhanced.

Abstract: A method for coating a thick spin-on-glass layer on a semiconductor structure without cracking problems and with improved planarization is disclosed. In the method, a pre-processed semiconductor structure that has a plurality of metal lines on top is first provided. After a first conformal layer of silicon oxide is deposited on top to insulate the metal lines, a first and a second layer of SOG are coated on top to a total thickness of at least 2500 Å. On top of the second SOG layers, is then deposited a second layer of silicon oxide by a plasma enhanced oxide deposition technique to a thickness of at least 1000 Å. A third and a fourth SOG layer are then coated on top of the stress buffer layer to a total thickness of at least 2500 Å.

Abstract: A method for coating a thick spin-on-glass layer on a semiconductor structure without cracking problems and with improved planarization is disclosed. In the method, a pre-processed semiconductor structure that has a plurality of metal lines on top is first provided. After a first conformal layer of silicon oxide is deposited on top to insulate the metal lines, a first and a second layer of SOG are coated on top to a total thickness of at least 2500 Å. On top of the second SOG layers, is then deposited a second layer of silicon oxide by a plasma enhanced oxide deposition technique to a thickness of at least 1000 Å. A third and a fourth SOG layer are then coated on top of the stress buffer layer to a total thickness of at least 2500 Å.

Abstract: The present invention relates to a type of plant tissue culture vessels which comprises a container and a cover, wherein the container is made of transparent synthetic polymers and has a opening, a stress concentration seams which be formed on the circumferential surface and/or bottom of the container and which can be focused the distribution of stresses in certain way that can be safely and easily avulsion before seedlings are removed from the culture vessel.