Abstract: A method for fabricating a multi-layer, crown-shaped MIM capacitor is provided. A base having therein a conductive region within a capacitor-forming region is formed. An IMD layer is deposited on the base to cover the capacitor-forming region. A capacitor trench is formed within the capacitor-forming region. The capacitor trench penetrates through the IMD layer, thereby exposing a portion of the conductive region. A concentric capacitor lower electrode structure is formed within the capacitor trench. The concentric capacitor lower electrode structure includes a first electrode and a second electrode surrounded by the first electrode. The first electrode is in direct contact with the conductive region. A conductive supporting pedestal is formed within the capacitor trench for fixing and electrically connecting bottom portions of the first and second electrodes. A capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal is formed.

Abstract: A method for fabricating a multi-layer, crown-shaped MIM capacitor is provided. A base having therein a conductive region within a capacitor-forming region is formed. An IMD layer is deposited on the base to cover the capacitor-forming region. A capacitor trench is formed within the capacitor-forming region. The capacitor trench penetrates through the IMD layer, thereby exposing a portion of the conductive region. A concentric capacitor lower electrode structure is formed within the capacitor trench. The concentric capacitor lower electrode structure includes a first electrode and a second electrode surrounded by the first electrode. The first electrode is in direct contact with the conductive region. A conductive supporting pedestal is formed within the capacitor trench for fixing and electrically connecting bottom portions of the first and second electrodes. A capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal is formed.

Abstract: A multi-layer, crown-shaped MIM capacitor includes a base having therein conductive region, an inter-metal dielectric (IMD) layer on the base, a capacitor trench penetrating through the IMD layer and exposing the conductive region, a capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting the bottom portions of the first and second electrodes, a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal, and a capacitor upper electrode on the capacitor dielectric layer.

Abstract: A multi-layer, crown-shaped MIM capacitor includes a base having therein conductive region, an inter-metal dielectric (IMD) layer on the base, a capacitor trench penetrating through the IMD layer and exposing the conductive region, a capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting the bottom portions of the first and second electrodes, a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal, and a capacitor upper electrode on the capacitor dielectric layer.

Abstract: A method of forming a pattern including following steps is provided. A wafer is provided, wherein the wafer includes a plurality of wafer interior dies and a plurality of wafer edge dies. A first pattern is formed on each of the wafer interior dies, and a second pattern is formed on each of the wafer edge dies. A method of forming the first patterns includes performing at least two exposure processes, and a method of forming the second patterns includes performing at least one of the at least two exposure processes, wherein a number of the exposure processes performed for forming the second patterns is less than a number of the exposure processes performed for forming the first patterns.