Patents by Inventor Wen Yong Jiang

Wen Yong Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11766844
    Abstract: Methods and structures are provided for a dunnage system to facilitate efficient coupling together of supply units of pre-configured sheet stock material, such as, for example, separate units of fanfold stacks of pre-configured sheet stock material, in a manner of continuous supply with a continuous pocket extending longitudinally between the separate supply units, so that they can interact with an expander of the dunnage system without disruption as one supply unit is depleted and a next supply unit is fed through the dunnage system. Also, various methods, apparatus, and systems are provided to facilitate smooth operation of a dunnage machine of the dunnage system to reduce a tendency of the pre-configured sheet stock material to jam and to increase the tendency of dunnage product generated to reflect a desired shape and stability.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: September 26, 2023
    Assignee: INTERTAPE POLYMER CORP.
    Inventors: Simon C. S. Chan, Wen Yong Jiang
  • Patent number: 11498304
    Abstract: Methods and structures are provided for a dunnage system to facilitate efficient coupling together of supply units of pre-configured sheet stock material, such as, for example, separate units of fanfold stacks of pre-configured sheet stock material, in a manner of continuous supply with a continuous pocket extending longitudinally between the separate supply units, so that they can interact with an expander of the dunnage system without disruption as one supply unit is depleted and a next supply unit is fed through the dunnage system. Also, various methods, apparatus, and systems are provided to facilitate smooth operation of a dunnage machine of the dunnage system to reduce a tendency of the pre-configured sheet stock material to jam and to increase the tendency of dunnage product generated to reflect a desired shape and stability.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: November 15, 2022
    Assignee: INTERTAPE POLYMER CORP.
    Inventors: Simon C.S. Chan, Wen Yong Jiang
  • Publication number: 20220088896
    Abstract: Methods and structures are provided for a dunnage system to facilitate efficient coupling together of supply units of pre-configured sheet stock material, such as, for example, separate units of fanfold stacks of pre-configured sheet stock material, in a manner of continuous supply with a continuous pocket extending longitudinally between the separate supply units, so that they can interact with an expander of the dunnage system without disruption as one supply unit is depleted and a next supply unit is fed through the dunnage system. Also, various methods, apparatus, and systems are provided to facilitate smooth operation of a dunnage machine of the dunnage system to reduce a tendency of the pre-configured sheet stock material to jam and to increase the tendency of dunnage product generated to reflect a desired shape and stability.
    Type: Application
    Filed: May 4, 2021
    Publication date: March 24, 2022
    Inventors: Simon C.S. Chan, Wen Yong Jiang
  • Patent number: 11217593
    Abstract: Embodiments provide a memory structure and its formation method. In those embodiments, a semiconductor substrate is provided. Discrete active areas arranged in rows and columns can be formed on the substrate. A first groove between two adjacent discrete active areas can be formed. The first groove can be filled with an insulating layer. Two second grooves along a row direction in each of the discrete active areas can be formed to divide the areas into a drain and two sources located on both sides of the drain. A third groove can be formed in part of the insulating layer on both sides of a bottom of the second groove. The third groove can expose a part of a surface of the sidewalls on both sides of the active area at the bottom of the second groove. The memory structure in those embodiment can help reduce current leakage.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: January 4, 2022
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Wen-yong Jiang
  • Patent number: 11189624
    Abstract: A memory structure and formation method are provided. The memory structure can comprise two second grooves along the row direction in each active area. The two second grooves divides each active area into a drain and two sources located on both sides of the drain. The surface of the insulating layer is lower than bottom surface of the second groove. A third groove is formed on the insulating layer between the first anti-etching dielectric layer and the second anti-etching dielectric layer to expose at least part of the surface of the sidewalls on both sides of the active area at the bottom of the second grooves and part of the surface of the sidewalls of the source and drain on both sides of the second grooves. The third groove is in connection with the second groove. A gate structure is formed in the second groove and the third groove.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: November 30, 2021
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Wen-yong Jiang
  • Publication number: 20210313332
    Abstract: A memory structure and formation method are provided. The memory structure can comprise two second grooves along the row direction in each active area. The two second grooves divides each active area into a drain and two sources located on both sides of the drain. The surface of the insulating layer is lower than bottom surface of the second groove. A third groove is formed on the insulating layer between the first anti-etching dielectric layer and the second anti-etching dielectric layer to expose at least part of the surface of the sidewalls on both sides of the active area at the bottom of the second grooves and part of the surface of the sidewalls of the source and drain on both sides of the second grooves. The third groove is in connection with the second groove. A gate structure is formed in the second groove and the third groove.
    Type: Application
    Filed: May 18, 2021
    Publication date: October 7, 2021
    Inventor: Wen-yong Jiang
  • Publication number: 20210242213
    Abstract: Embodiments provide a memory structure and its formation method. In those embodiments, a semiconductor substrate is provided. Discrete active areas arranged in rows and columns can be formed on the substrate. A first groove between two adjacent discrete active areas can be formed. The first groove can be filled with an insulating layer. Two second grooves along a row direction in each of the discrete active areas can be formed to divide the areas into a drain and two sources located on both sides of the drain. A third groove can be formed in part of the insulating layer on both sides of a bottom of the second groove. The third groove can expose a part of a surface of the sidewalls on both sides of the active area at the bottom of the second groove. The memory structure in those embodiment can help reduce current leakage.
    Type: Application
    Filed: April 19, 2021
    Publication date: August 5, 2021
    Inventor: Wen-yong JIANG
  • Patent number: 11027511
    Abstract: Methods and structures are provided for a dunnage system to facilitate efficient coupling together of supply units of pre-configured sheet stock material, such as, for example, separate units of fanfold stacks of pre-configured sheet stock material, in a manner of continuous supply with a continuous pocket extending longitudinally between the separate supply units, so that they can interact with an expander of the dunnage system without disruption as one supply unit is depleted and a next supply unit is fed through the dunnage system. Also, various methods, apparatus, and systems are provided to facilitate smooth operation of a dunnage machine of the dunnage system to reduce a tendency of the pre-configured sheet stock material to jam and to increase the tendency of dunnage product generated to reflect a desired shape and stability.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: June 8, 2021
    Assignee: Nuevopak Technology Company Limited
    Inventors: Simon C. S. Chan, Wen Yong Jiang
  • Publication number: 20200282686
    Abstract: Methods and structures are provided for a dunnage system to facilitate efficient coupling together of supply units of pre-configured sheet stock material, such as, for example, separate units of fanfold stacks of pre-configured sheet stock material, in a manner of continuous supply with a continuous pocket extending longitudinally between the separate supply units, so that they can interact with an expander of the dunnage system without disruption as one supply unit is depleted and a next supply unit is fed through the dunnage system. Also, various methods, apparatus, and systems are provided to facilitate smooth operation of a dunnage machine of the dunnage system to reduce a tendency of the pre-configured sheet stock material to jam and to increase the tendency of dunnage product generated to reflect a desired shape and stability.
    Type: Application
    Filed: March 20, 2020
    Publication date: September 10, 2020
    Inventors: Simon C.S. Chan, Wen Yong Jiang