Patents by Inventor Wenyu Gao

Wenyu Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240153472
    Abstract: The present disclosure provides a display device and a display method. The display device includes: a memory for storing at least one pre-stored image; and a controller for: obtaining first and second target images according to the at least one pre-stored image; and controlling a display module, according to a first control instruction, to display the second target image and hide a display of at least one first sub-region in a first region in a frame displayed after switching from the first target image to the second target image. A size of the first target image is different from that of the second target image, and/or a position of the first target image in a display picture is different from that of the second target image. The first region represents a region within an outer contour of the first target image and not overlapping with the second target image.
    Type: Application
    Filed: September 30, 2022
    Publication date: May 9, 2024
    Inventors: Wenyu Li, Jian Zhang, Shou Li, Shuyan Ma, Xiaoning Jiang, Jing Zhang, Yingbo Gao, Zhanchang Bu, Site Cai, Tianyang Han
  • Patent number: 7833817
    Abstract: A method for fabricating an image sensor includes following steps. First, a substrate having semiconductor devices formed thereon is provided. Interlayer insulating films and Interlayer conductive films are formed on the substrate alternately, wherein the interlayer conductive films are electrically connected to the semiconductor devices. Next, isolated photo-diodes are formed on a topmost layer of the interlayer conductive films, wherein one electrode of the isolated photo-diodes is electrically connected to a topmost layer of the interlayer conductive films. A top insulating layer is formed on the topmost layer of the interlayer conductive films, wherein the isolated photo-diodes are covered by the top insulating layer. A top conductive layer is formed in the top insulating layer, wherein the top conductive layer is electrically connected to another electrode of the isolated photo-diodes.
    Type: Grant
    Filed: November 10, 2008
    Date of Patent: November 16, 2010
    Assignee: Hejian Technology (Suzhou) Co., Ltd.
    Inventors: Wenyu Gao, Cedric Lee
  • Publication number: 20090068786
    Abstract: A method for fabricating an image sensor includes following steps. First, a substrate having semiconductor devices formed thereon is provided. Interlayer insulating films and Interlayer conductive films are formed on the substrate alternately, wherein the interlayer conductive films are electrically connected to the semiconductor devices. Next, isolated photo-diodes are formed on a topmost layer of the interlayer conductive films, wherein one electrode of the isolated photo-diodes is electrically connected to a topmost layer of the interlayer conductive films. A top insulating layer is formed on the topmost layer of the interlayer conductive films, wherein the isolated photo-diodes are covered by the top insulating layer. A top conductive layer is formed in the top insulating layer, wherein the top conductive layer is electrically connected to another electrode of the isolated photo-diodes.
    Type: Application
    Filed: November 10, 2008
    Publication date: March 12, 2009
    Applicant: HEJIAN TECHNOLOGY (SUZHOU) CO., LTD.
    Inventors: Wenyu Gao, Cedric Lee
  • Patent number: 7482646
    Abstract: An image sensor including a substrate having a plurality of semiconductor devices formed thereon, an interconnection layer disposed on the substrate, and a plurality of isolated photo-diodes embedded in the interconnection layer is provided. The isolated photo-diodes are located above the semiconductor devices and electrically connected to the semiconductor devices through the interconnection layer. In the above-mentioned image sensor, thickness of the interconnection layer is not limited so as to facilitate fabrication of the SOC CMOS image sensor. In addition, the image sensor is advantageous in relatively high fill-factor, layout area saving and easy being implanted. Furthermore, a method for fabricating the image mentioned above is also provided.
    Type: Grant
    Filed: October 18, 2006
    Date of Patent: January 27, 2009
    Assignee: Hejian Technology (Suzhou) Co., Ltd.
    Inventors: Wenyu Gao, Cedric Lee
  • Publication number: 20080093695
    Abstract: An image sensor including a substrate having a plurality of semiconductor devices formed thereon, an interconnection layer disposed on the substrate, and a plurality of isolated photo-diodes embedded in the interconnection layer is provided. The isolated photo-diodes are located above the semiconductor devices and electrically connected to the semiconductor devices through the interconnection layer. In the above-mentioned image sensor, thickness of the interconnection layer is not limited so as to facilitate fabrication of the SOC CMOS image sensor. In addition, the image sensor is advantageous in relatively high fill-factor, layout area saving and easy being implanted. Furthermore, a method for fabricating the image mentioned above is also provided.
    Type: Application
    Filed: October 18, 2006
    Publication date: April 24, 2008
    Applicant: HEJIAN TECHNOLOGY (SUZHOU) CO., LTD.
    Inventors: Wenyu Gao, Cedric Lee