Abstract: The present invention discloses an anti-aging composition, which includes: (a) isolated lactic acid bacterial strains or a fermented product thereof; and (b) an excipient, a diluent, or a carrier; wherein the isolated lactic acid bacterial strains include: Bifidobacterium bifidum VDD088 strains, Bifidobacterium breve Bv-889 strains, and Bifidobacterium longum BLI-02 strains. The present invention further provides a method for preventing aging by administering the foregoing anti-aging composition to a subject in need thereof.

Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).

Abstract: A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.

Abstract: A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.

Abstract: A method of making tungsten plug of integrated circuit is disclosed. The present invention is structured to deposit W metal by CVD onto the wafer which has Ti/TiN sputtered on as its top layer by employing quartz clamp rings of different sizes in two CVD chambers. The method can eliminate the Volcano phenomena in Ti, TiN or W metals and prevent peeling.

Abstract: A method of fabricating bonding pad structure for improving bonding pad surface quality. A substrate has a bonding pad thereon. A passivation is formed on the bonding pad to expose the bonding pad. A sacrificial layer is formed on the passivation and an opening is formed within the sacrificial layer to expose the bonding pad. A Cu/Al alloy is formed on the passivation to at least cover the bonding pad. The sacrificial layer and the Cu/Al alloy thereon are removed, such that the Cu/Al alloy remains on the bonding pad.

Abstract: A method of forming a CVD nitride (e.g., titanium nitride) film on a substrate. The as-deposited nitride film is treated by a plasma of a high power density (preferably between approximately 200 W and 300 W) for a prolonged duration of time (preferably between approximately 32 s and 52 s) to reduce the tendency of the resistance and thickness of the as-deposited film to change because of either time of exposure to atmosphere or subsequent processing steps.

Abstract: The present invention is a chemical vapor deposition of tungsten(W-CVD)process for growing low stress and void free interconnect. The method of this invention utilizes two steps W-CVD process by two chambers. The first step, filling tungsten metal completely in the contact hole, is performed in the first chamber. The second step, forming a tungsten layer for interconnect, is performed in the second chamber. Because of using two different chambers, the method of this invention can adjust the temperature of the process and the gas flow of the WF.sub.6 vapor of the process for different required the two steps. The second step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow has reduced greatly the stress of the second conductive layer. Moreover, the first step of chemical vapor deposition of tungsten by adjusting the temperature and the gas flow prevents voids in the contact hole or in the via hole.

Abstract: A method of reducing tungsten plug loss in processes for fabrication for silicon-based semiconductor devices that include a tungsten plug in a high aspect ratio contact hole. The invention provides a barrier layer prepared by first forming a conformal layer of titanium nitride by chemical vapor deposition. Afterward, another film of titanium nitride is supplied by plasma vapor deposition. The barrier layer comprises at least these two films, and tungsten is then deposited to at least fill the high aspect ratio film-coated contact hole. Upon removal of excess tungsten as by wet etch back, the tungsten plug remains essentially intact, and any plug loss is insignificant in comparison with the prior art.

Abstract: The present invention provides a method for stabilizing the crystal structure of a silicon substrate after an ion implantation process including the step of exposing the substrate to a temperature not higher than 200.degree. C. for a time period of not less than 10 seconds, and preferably to a temperature between about 100.degree. C. and about 200.degree. C. for a time period of between about 10 seconds and about 10,000 seconds.