Abstract: An interleaved flyback converter device with leakage energy recycling includes: two flyback converters and an input power. Each flyback converter includes a capacitor, a switch, two diodes, and a transformer. The input power is connected to the capacitors of the two flyback converters respectively. By using the capacitors as input voltage, the two flyback converters are provided with lower voltage rating. The diodes are used to recycle leakage energy directly, and to clamp voltage on power components. Therefore, in addition to enhancing efficiency via recycling leakage energy, the two flyback converters have lower switching losses due to lower switching voltage.

Abstract: An interleaved flyback converter device with leakage energy recycling includes: two flyback converters and an input power. Each flyback converter includes a capacitor, a switch, two diodes, and a transformer. The input power is connected to the capacitors of the two flyback converters respectively. By using the capacitors as input voltage, the two flyback converters are provided with lower voltage rating. The diodes are used to recycle leakage energy directly, and to clamp voltage on power components. Therefore, in addition to enhancing efficiency via recycling leakage energy, the two flyback converters have lower switching losses due to lower switching voltage.

Abstract: The present invention relates to a circuit providing frequency-doubling function. More particularly, the present invention relates to a frequency doubler circuit comprising dual Gilbert mixers in replace with the single mixer scheme in the conventional direct conversion transceiver circuit. CMOS technology is preferred in order to lower size and power consumption of the specific IC. With a balanced output load, either is resistor-capacitor (RC) load, resistor-inductor (RL) load, or a combination of the three (RLC), symmetrical output waveforms are obtained thereby. Notice that two quadrature inputs and their inverse-phase signals are provided to the purposed dual Gilbert mixer circuit, and two outputs in inverse-phase are obtained accordingly as meditated in this invention.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.

Abstract: A method for fabricating a low temperature polysilicon thin film transistor incorporating a channel passivation step is described. The method achieves dopant ion activation in a polysilicon gate by using laser irradiation, however, with an additional insulating material layer such as SiOx or SixNy overlying and protecting the channel portion of the polysilicon gate. Any possible contamination by residual photoresist material after a photoresist removal step on the channel portion of the polysilicon gate can thus be avoided. Furthermore, deficiencies such as dopant ions out-diffusion and lateral diffusion can be avoided. The leakage current of the thin film transistors formed by the present invention method is significantly reduced when compared to those formed by a conventional method.