Patents by Inventor Wen-Yu Lin

Wen-Yu Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11911421
    Abstract: Disclosed herein is a probiotic composition that includes Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9, which are deposited at the China Center for Type Culture Collection (CCTCC) respectively under accession numbers CCTCC M 2011127, CCTCC M 2011128, and CCTCC M 2014588. A number ratio of Lactobacillus salivarius subsp. salicinius AP-32, Lactobacillus johnsonii MH-68, and Bifidobacterium animalis subsp. lactis CP-9 ranges from 1:0.1:0.1 to 1:1:8. Also disclosed herein is use of the probiotic composition for alleviating type 1 diabetes mellitus (T1DM).
    Type: Grant
    Filed: November 18, 2021
    Date of Patent: February 27, 2024
    Assignee: GLAC BIOTECH CO., LTD.
    Inventors: Hsieh-Hsun Ho, Wen-Yang Lin, Yi-Wei Kuo, Yen-Yu Huang, Jia-Hung Lin
  • Publication number: 20240055181
    Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, where a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from inside to outside; a first metal winding, wound around the magnetic core and comprising a first winding segment formed in the first wiring layer and a second winding segment formed in the second wiring layer; and a second metal winding, wound around the magnetic core and comprising a third winding segment formed in the first wiring layer and a fourth winding segment formed in the second wiring; where at least part of the first metal winding and the second metal winding are wound around the magnetic core in a foil structure.
    Type: Application
    Filed: October 24, 2023
    Publication date: February 15, 2024
    Inventors: Chaofeng CAI, Xiaoni XIN, Jianhong ZENG, Shouyu HONG, Rui WU, Haoyi YE, Yiqing YE, Jinping ZHOU, Zhiheng FU, Min ZHOU, YU-CHING KUO, TONG-SHENG PAN, WEN-YU LIN
  • Publication number: 20240055182
    Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, a first wiring layer, a first insulating layer and a second wiring layer, where the first wiring layer, the first insulating layer and the second wiring layer are sequentially disposed on the magnetic core from outside to inside; a first metal winding, formed in the first wiring layer, where at least part of the first metal winding is wound around the magnetic core in a foil structure; the first insulating layer, at least partially covered by the first metal winding; a second metal winding, formed in the second wiring layer and wound around the magnetic core, where the second metal winding is at least partially covered by the first insulating layer, and at least partially covered by the first metal winding.
    Type: Application
    Filed: October 25, 2023
    Publication date: February 15, 2024
    Inventors: Chaofeng CAI, Xiaoni XIN, Jianhong ZENG, Shouyu HONG, Rui WU, Haoyi YE, Yiqing YE, Jinping ZHOU, Zhiheng FU, Min ZHOU, YU-CHING KUO, TONG-SHENG PAN, WEN-YU LIN
  • Publication number: 20240047135
    Abstract: The present disclosure provides a manufacturing process of a metal winding, where the manufacturing process includes: cutting a first metal copper foil to form a connector and a pin; performing insulation processing on a surface of at least one of the first metal copper foil and a second metal copper foil; bending the first metal copper foil to form a first metal winding to cover on a magnetic core; and covering the second metal copper foil at least partially on a surface of the first metal copper foil to form a second metal winding, and a pin of the first metal winding passes through the second metal winding.
    Type: Application
    Filed: October 16, 2023
    Publication date: February 8, 2024
    Inventors: Chaofeng CAI, Xiaoni XIN, Jianhong ZENG, Shouyu HONG, Rui WU, Haoyi YE, Yiqing YE, Jinping ZHOU, Zhiheng FU, Min ZHOU, YU-CHING KUO, TONG-SHENG PAN, WEN-YU LIN
  • Patent number: 11870010
    Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: January 9, 2024
    Assignee: Xiamen San'An Optoelectronics Co., Ltd.
    Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
  • Patent number: 11842847
    Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, where a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from inside to outside; a first metal winding, wound around the magnetic core in a foil structure, and comprising a first winding segment formed in the first wiring layer and a second winding segment formed in the second wiring layer; and a second metal winding, wound around the magnetic core in a foil structure, comprising a third winding segment formed in the first wiring layer and a fourth winding segment formed in the second wiring.
    Type: Grant
    Filed: August 11, 2022
    Date of Patent: December 12, 2023
    Assignee: DELTA ELECTRONICS (SHANGHAI) CO., LTD.
    Inventors: Chaofeng Cai, Xiaoni Xin, Jianhong Zeng, Shouyu Hong, Rui Wu, Haoyi Ye, Yiqing Ye, Jinping Zhou, Zhiheng Fu, Min Zhou, Yu-Ching Kuo, Tong-Sheng Pan, Wen-Yu Lin
  • Publication number: 20230268256
    Abstract: An electronic package structure and manufacturing method thereof. The electronic package structure includes a circuit board, an interposer, a chip, a circuit structure, and a coaxial conductive element. The interposer is disposed on the circuit board. The interposer has a through groove. The chip is disposed in the through groove and located on the circuit board to electrically connect with the circuit board. The circuit structure is disposed on the interposer. The coaxial conductive element penetrates the interposer to electrically connect the circuit structure and the circuit board. The coaxial conductive element includes a first conductive structure, a second conductive structure, and a first insulating structure. The second conductive structure surrounds the first conductive structure. The first insulating structure is disposed between the first conductive structure and the second conductive structure.
    Type: Application
    Filed: August 18, 2022
    Publication date: August 24, 2023
    Applicant: Unimicron Technology Corp.
    Inventors: Chin-Sheng Wang, Ra-Min Tain, Wen-Yu Lin, Tse-Wei Wang, Jun-Ho Chen, Guang-Hwa Ma
  • Publication number: 20230268257
    Abstract: An electronic package structure and its manufacturing method are provided. The electronic package structure includes an interposer, a circuit board, a chip, and a circuit structure. The interposer includes an interposer substrate and a coaxial conductive element located in the interposer substrate. The interposer substrate includes a cavity. The coaxial conductive element includes a first conductive structure, a second conductive structure surrounding the first conductive structure, and a first insulation structure. The first insulation structure is disposed between the first and second conductive structures. The circuit board is disposed on a lower surface of the interposer substrate and electrically connected to the coaxial conductive element. The chip is disposed in the cavity and located on the circuit board, so as to be electrically connected to the circuit board.
    Type: Application
    Filed: September 5, 2022
    Publication date: August 24, 2023
    Applicant: Unimicron Technology Corp.
    Inventors: Chin-Sheng Wang, Ra-Min Tain, Wen-Yu Lin, Tse-Wei Wang, Jun-Ho Chen, Guang-Hwa Ma
  • Publication number: 20230240023
    Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.
    Type: Application
    Filed: March 2, 2022
    Publication date: July 27, 2023
    Applicant: Unimicron Technology Corp.
    Inventors: Wen-Yu Lin, Kai-Ming Yang, Chen-Hao Lin, Pu-Ju Lin, Cheng-Ta Ko, Chin-Sheng Wang, Guang-Hwa Ma, Tzyy-Jang Tseng
  • Publication number: 20230215772
    Abstract: The invention discloses a glass carrier having a protection structure, comprising a glass body and a protection layer. The glass body has a top surface, a bottom surface, and a lateral surface. The protection layer covers the lateral surface of the glass body. The protection layer is a hard material with a stiffness coefficient higher than a stiffness coefficient of the glass body. The invention further discloses a manufacturing method of a glass carrier having a protection structure, comprising the following steps: covering the protection layer around the lateral surface of the glass body, wherein the protection layer is the hard material with the stiffness coefficient higher than the stiffness coefficient of the glass body.
    Type: Application
    Filed: January 27, 2022
    Publication date: July 6, 2023
    Inventors: WEN YU LIN, KAI-MING YANG, PU-JU LIN
  • Publication number: 20230187598
    Abstract: A light-emitting diode package structure includes a heat dissipation substrate, a redistribution layer, and multiple light-emitting diodes. The heat dissipation substrate includes multiple copper blocks and a heat-conducting material layer. The copper blocks penetrate the heat-conducting material layer. The redistribution layer is disposed on the heat dissipation substrate and electrically connected to the copper blocks. The light-emitting diodes are disposed. on the redistribution layer and are electrically connected to the redistribution layer. A side of the light-emitting diodes away from the redistribution layer is not in contact with any component.
    Type: Application
    Filed: January 25, 2022
    Publication date: June 15, 2023
    Applicant: Unimicron Technology Corp.
    Inventors: Wen-Yu Lin, Kai-Ming Yang
  • Publication number: 20230178520
    Abstract: A light-emitting diode package includes a redistribution layer, a light-emitting diode, a first dielectric layer, a plurality of wavelength conversion structures, and a transparent encapsulant. The light-emitting diode is disposed on and electrically connected to the redistribution layer. The light-emitting diode includes a first light-emitting diode, a second light-emitting diode, and a third light-emitting diode. The first dielectric layer is disposed on the redistribution layer and covers the light-emitting diode. The wavelength conversion structures are disposed on the first dielectric layer and respectively in contact with the second light-emitting diode and the third light-emitting diode. The transparent encapsulant is disposed on the first dielectric layer and covers the plurality of wavelength conversion structures. In addition, a manufacturing method of the light-emitting diode package is provided.
    Type: Application
    Filed: January 10, 2022
    Publication date: June 8, 2023
    Applicant: Unimicron Technology Corp.
    Inventors: Wen-Yu Lin, Kai-Ming Yang, Chen-Hao Lin
  • Publication number: 20230143466
    Abstract: A magnetic component includes a magnetic body and a coil. The magnetic body includes an inner leg, at least one outer leg, a first bottom portion and a second bottom portion. The inner leg and the at least one outer leg protrude from the first bottom portion and the second bottom portion. A cross-sectional area of the inner leg is larger than a total cross-sectional area of the at least one outer leg. The coil is wound around the inner leg.
    Type: Application
    Filed: November 9, 2021
    Publication date: May 11, 2023
    Applicant: CYNTEC CO., LTD.
    Inventors: Wen-Yu Lin, Mo-Yang Lu, Kai-Yi Fong
  • Publication number: 20230122025
    Abstract: A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.
    Type: Application
    Filed: December 16, 2022
    Publication date: April 20, 2023
    Inventors: Wen-Yu LIN, Meng-Hsin YEH, Yun-Ming LO, Chien-Yao TSENG, Chung-Ying CHANG
  • Patent number: 11538960
    Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: December 27, 2022
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD
    Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
  • Publication number: 20220384095
    Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, where a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from inside to outside; a first metal winding, wound around the magnetic core in a foil structure, and comprising a first winding segment formed in the first wiring layer and a second winding segment formed in the second wiring layer; and a second metal winding, wound around the magnetic core in a foil structure, comprising a third winding segment formed in the first wiring layer and a fourth winding segment formed in the second wiring.
    Type: Application
    Filed: August 11, 2022
    Publication date: December 1, 2022
    Inventors: Chaofeng CAI, Xiaoni XIN, Jianhong ZENG, Shouyu HONG, Rui WU, Haoyi YE, Yiqing YE, Jinping ZHOU, Zhiheng FU, Min ZHOU, YU-CHING KUO, TONG-SHENG PAN, WEN-YU LIN
  • Patent number: 11450480
    Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, a first metal winding and a second metal winding. A first wiring layer, a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from the outside to the inside; the first metal winding is formed on the first wiring layer and winded around the magnetic core in a foil structure; the first insulating layer is at least partially covered by the first metal winding; a second metal winding is formed on the second wiring layer and winded around the magnetic core in a foil structure, wherein the second metal winding is at least partially covered by the first insulating layer, and is at least partially covered by the first metal winding.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: September 20, 2022
    Assignee: Delta Electronics (Shanghai) Co., Ltd.
    Inventors: Chaofeng Cai, Xiaoni Xin, Jianhong Zeng, Shouyu Hong, Rui Wu, Haoyi Ye, Yiqing Ye, Jinping Zhou, Zhiheng Fu, Min Zhou, Yu-Ching Kuo, Tong-Sheng Pan, Wen-Yu Lin
  • Publication number: 20220223758
    Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has a sub-layer made of a nitride-based semiconductor material including Al, and having an energy band gap greater than that of said electron-blocking layer. The P-type electron-blocking layer is made of a nitride-based semiconductor material including Al, and has an energy band gap greater than that of the P-type cladding layer.
    Type: Application
    Filed: March 31, 2022
    Publication date: July 14, 2022
    Inventors: Wen-Yu LIN, Meng-Hsin YEH, Yun-Ming LO, Chien-Yao TSENG, Chung-Ying CHANG
  • Patent number: 11296256
    Abstract: A light-emitting diode includes an N-type cladding layer, and a superlattice structure, an active layer, a P-type electron-blocking layer, and a P-type cladding layer disposed on the N-type cladding layer in such order. The superlattice structure includes at least one first layered element which has first, second, and third sub-layers that are stacked on one another in a direction away from the N-type cladding layer. The first, second, and third sub-layers have energy band gaps Eg1, Eg2, and Eg3 which satisfy a relationship of Eg1<Eg2<Eg3. In addition, Eg3 is greater than an energy band gap of the P-type electron-blocking layer.
    Type: Grant
    Filed: May 26, 2020
    Date of Patent: April 5, 2022
    Assignee: Xiamen San'An Optoelectronics Co., Ltd.
    Inventors: Wen-Yu Lin, Meng-Hsin Yeh, Yun-Ming Lo, Chien-Yao Tseng, Chung-Ying Chang
  • Publication number: 20220013685
    Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.
    Type: Application
    Filed: November 12, 2020
    Publication date: January 13, 2022
    Inventors: WEN-YU LIN, MENG-HSIN YEH, YUN-MING LO, CHIEN-YAO TSENG, CHUNG-YING CHANG