Patents by Inventor Wen-Yu Shiao

Wen-Yu Shiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110175126
    Abstract: A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.
    Type: Application
    Filed: January 18, 2011
    Publication date: July 21, 2011
    Inventors: Hung-Chih YANG, Ming-Chi Hsu, Ta-Cheng Hsu, Chih-Chung Yang, Tsung-Yi Tang, Yung-Sheng Chen, Wen-Yu Shiao, Che-Hao Liao, Yu-Jiun Shen, Sheng-Horng Yen
  • Publication number: 20080157056
    Abstract: A producing method of poly-wavelength light-emitting diode of utilizing nano-crystals and the light-emitting device thereof includes growing and processing a multiple-quantum-well layer based on stacking the mixture of at least two kinds of quantum wells to produce a two-wavelength light-emitting diode. Then, attaching nano-crystals on the two-wavelength light-emitting diode to transfer one of the wavelengths of the two-wavelength light-emitting diode to produce a poly-wavelength light-emitting diode. The device of the present invention can emit blue, green and red lights to produce white light.
    Type: Application
    Filed: June 26, 2007
    Publication date: July 3, 2008
    Inventors: Dong-Ming Yeh, Horng-Shyang Chen, Chih-Feng Lu, Chi-Feng Huang, Wen-Yu Shiao, Jian-Jang Huang, Yen-Cheng Lu, Chih-Chung Yang
  • Publication number: 20080124827
    Abstract: A method and structure for manufacturing long-wavelength visible light-emitting diode (LED) using the prestrained growth effect comprises the following steps: Growing a strained low-indium-content InGaN layer on the N-type GaN layer, and then growing a high-indium-content InGaN/GaN single- or multiple-quantum-well light-emitting structure on the low-indium-content InGaN layer to enhance the indium content of the high-indium quantum wells and hence to elongate the emission wavelength of the LED. The method of the invention can elongate emission wavelength of the LED by more than 50 nm (nanometer) such that an originally designated green LED can emit red light or orange light without influencing other electrical properties.
    Type: Application
    Filed: June 28, 2007
    Publication date: May 29, 2008
    Inventors: Chi-Feng Huang, Tsung-Yi Tang, Jeng-Jie Huang, Wen-Yu Shiao, Horng-Shyang Chen, Chih-Feng Lu, Jian-Jang Huang, Chih-Chung Yang