Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A semiconductor device includes a channel region, a source/drain region adjacent to the channel region, and a source/drain epitaxial layer. The source/drain epitaxial layer includes a first epitaxial layer epitaxially formed on the source/drain region, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer. The first epitaxial layer includes at least one selected from the group consisting of a SiAs layer, a SiC layer and a SiCP layer.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: An antenna structure includes a metal frame. The metal frame includes a first gap, a second gap, a third gap, and a fourth gap to separate a first antenna, a second antenna, a third antenna, and a fourth antenna from the metal frame. The metal frame includes a fifth antenna. The first antenna, the second antenna, the third antenna, and the fourth antenna cooperatively form a first multiple-input multiple-output (MIMO) antenna to provide a 4×4 multiple-input multiple-output function in a second frequency band. The first antenna, the second antenna, the third antenna, and the fifth antenna cooperatively form a second MIMO antenna to provide a 4×4 multiple-input multiple-output function in a third frequency band. The first antenna and the third antenna cooperatively form a third MIMO antenna to provide a 2×2 multiple-input multiple-output function in a first frequency band.

Abstract: An electronic device includes a backup power supply unit, a first power management unit, a switch, a voltage detection unit, a processor and an electronic module. The first power management unit is coupled to the backup power supply unit and an external power supply unit. The switch is coupled to the first power management unit. The voltage detection unit is coupled to the external power supply unit and the switch. The processor is coupled to the voltage detection unit. The electronic module is coupled to the switch and the processor. When a voltage level of the external power supply unit is lower than a first predetermined level, the voltage detection unit outputs a detection signal. The switch is controlled by the detection signal to open to stop supplying power to the electronic module. The processor is controlled by the detection signal to execute a shutdown process.

Abstract: A semiconductor device includes a channel region, a source/drain region adjacent to the channel region, and a source/drain epitaxial layer. The source/drain epitaxial layer includes a first epitaxial layer epitaxially formed on the source/drain region, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer. The first epitaxial layer includes at least one selected from the group consisting of a SiAs layer, a SiC layer and a SiCP layer.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: An antenna structure includes a metal frame. The metal frame includes a first gap, a second gap, a third gap, and a fourth gap to separate a first antenna, a second antenna, a third antenna, and a fourth antenna from the metal frame. The metal frame includes a fifth antenna. The first antenna, the second antenna, the third antenna, and the fourth antenna cooperatively form a first multiple-input multiple-output (MIMO) antenna to provide a 4×4 multiple-input multiple-output function in a second frequency band. The first antenna, the second antenna, the third antenna, and the fifth antenna cooperatively form a second MIMO antenna to provide a 4×4 multiple-input multiple-output function in a third frequency band. The first antenna and the third antenna cooperatively form a third MIMO antenna to provide a 2×2 multiple-input multiple-output function in a first frequency band.

Abstract: A control method, suitable for an electronic device, includes following operations. A first connection is established based on a classic Bluetooth protocol or a Bluetooth Low Energy protocol from the electronic device to a first target device. A Bluetooth identifier of the first target device acquired in the first connection is recorded. The Bluetooth identifier of the first target device is shared. The Bluetooth identifier is utilized to establish a second connection based on the classic Bluetooth protocol or the Bluetooth Low Energy protocol to the first target device. The first connection and the second connection are established based on different protocols.

Abstract: A control method, suitable for an electronic device, includes following operations. A first connection is established based on a classic Bluetooth protocol or a Bluetooth Low Energy protocol from the electronic device to a first target device. A Bluetooth identifier of the first target device acquired in the first connection is recorded. The Bluetooth identifier of the first target device is shared. The Bluetooth identifier is utilized to establish a second connection based on the classic Bluetooth protocol or the Bluetooth Low Energy protocol to the first target device. The first connection and the second connection are established based on different protocols.

Abstract: An antenna structure includes an antenna holder, a feed unit, a grounding unit, a first radiating unit, a second radiating unit, a third radiating unit, a parasitic unit, and a coupling unit. The feed unit and the grounding unit are positioned on the antenna holder and are spaced apart from each other. The first radiating unit and the third radiating unit are both electrically connected to the feed unit. The parasitic unit is electrically connected to the grounding unit. The first radiating unit couples with the second radiating unit and the parasitic unit. The second radiating unit further couples with the coupling unit and is grounded through the coupling unit.

Abstract: Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel.

Abstract: A method of forming an integrated circuit comprises forming a first doped region in a substrate using a first angle ion implantation performed on a first side of a gate structure. The gate structure has a length in a first direction and a width in a second direction. The method also comprises forming a second doped region in the substrate using a second angle ion implantation performed on a second side of the gate structure. The first angle ion implantation has a first implantation angle with respect to the second direction and the second angle ion implantation has a second implantation angle with respect to the second direction. Each of the first implantation angle and the second implantation angle is substantially larger than 0° and less than 90°.

Abstract: Methods and systems for media file management are provided. A music file including music samples is provided. The music file is analyzed to calculate a gain for each music sample. At least one valley point is detected based on the gains of the respective music samples. A first and a second specific valley points are selected from the detected valley point, and respectively setting the first and second specific valley points as a start and an end of a music segmentation. Media data is generated for media files in the electronic device based on the music segmentation.

Abstract: Methods and systems for media file management are provided. A music file is provided. The music file is analyzed to obtain a frequency spectrum corresponding to the music file, and at least one beat point on the time line is detected for the music file based on the frequency spectrum. Media data is generated for a plurality of media files in the electronic device based on the music file and a theme defining effects or transitions between the media files, wherein the sequence of the respective effects or transitions, and the corresponding media files which are selected for the respective effects or transitions are determined according to the at least one beat point of the music file.

Abstract: An antenna structure includes an antenna holder, a feed unit, a grounding unit, a first radiating unit, a second radiating unit, a third radiating unit, a parasitic unit, and a coupling unit. The feed unit and the grounding unit are positioned on the antenna holder and are spaced apart from each other. The first radiating unit and the third radiating unit are both electrically connected to the feed unit. The parasitic unit is electrically connected to the grounding unit. The first radiating unit couples with the second radiating unit and the parasitic unit. The second radiating unit further couples with the coupling unit and is grounded through the coupling unit.

Abstract: Disclosed herein are compositions and methods useful for the treatment of cancer, such as breast cancer. In some embodiments, the methods and compositions include human prolactin, or human prolactin in conjunction with a cytotoxic agent. In other embodiments, the methods and compositions include one or more of human prolactin, growth hormone and placental lactogen, or one or more of human prolactin, growth hormone and placental lactogen in conjunction with a cytotoxic agent. In some embodiments, the cytotoxic agent comprises a chemotherapeutic agent.

Abstract: Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel.

Abstract: A multimedia processing apparatus, method, and non-transitory tangible computer readable medium thereof are provided. The multimedia processing apparatus of the present invention includes an interface and a processing unit. The interface receives an audio stream continuously, wherein the audio stream is defined with a time line. The processing unit performs the following operations every a predetermined time interval: (a) deciding a first portion of the audio stream with reference to a time instant of the time line, (b) calculating an energy of the first portion of the audio stream, and (c) calculating a difference between the energy and a previous energy. The processing unit decides a plurality of second portions of the audio stream and decides a beat point for each of the second portions by selecting the time instant that corresponds to the maximum difference within the second portion.

Abstract: Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity type. The transistor device includes channel composed of a delta-doped layer comprising dopant impurities of the first impurity type, and configured to produce a peak dopant concentration within the channel. The channel further includes a layer of carbon-containing material overlying the delta-doped layer, and configured to prevent back diffusion of dopants from the delta-doped layer and semiconductor substrate. The channel also includes of a layer of substrate material overlying the layer of carbon-containing material, and configured to achieve steep retrograde dopant concentration profile a near a surface of the channel.