Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO2+In2O3) composite containing 9˜11% of (SnO2+In2O3) or an Ag—Cu oxide, composite containing 15˜25% of Cu oxide is used. The electrical contact material has a contact resistance of 5˜60 milliohms (mohm) and an arc erosion resistance capability up to 2*103˜10*103 times provided that the Vickers hardness (Hv) of the material is 100˜150, the measured current is 1˜5 amperes, and the measured voltage is 10˜20 volts. Two electrical contacts maintain an arc erosion resisting capability at the condition of a low contact resistance when the electrical contact material is formed on a surface of a metal substrate of an electric connector.

Abstract: In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO2+In2O3) composite containing 9˜11% of (SnO2+In2O3) or an Ag—Cu oxide, composite containing 15˜25% of Cu oxide is used. The electrical contact material has a contact resistance of 5˜60 milliohms (mohm) and an arc erosion resistance capability up to 2*103˜10*103 times provided that the Vickers hardness (Hv) of the material is 100˜150, the measured current is 1˜5 amperes, and the measured voltage is 10˜20 volts. Two electrical contacts maintain an arc erosion resisting capability at the condition of a low contact resistance when the electrical contact material is formed on a surface of a metal substrate of an electric connector.