Patents by Inventor Wen-Yuan Fan

Wen-Yuan Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9876145
    Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.
    Type: Grant
    Filed: November 9, 2015
    Date of Patent: January 23, 2018
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Shiou-Yi Kuo, Wen-Yuan Fan
  • Publication number: 20160197239
    Abstract: A flip-chip light emitting diode chip includes a first semiconductor structure, which includes a P-type semiconductor layer, a N-type semiconductor layer, openings, a reflective layer, a barrier layer, a passivation layer, and an electrical contact layer. The openings penetrate the P-type semiconductor layer and a part of the N-type semiconductor layer so as to partially expose the N-type semiconductor layer. The reflective layer is disposed on the P-type semiconductor layer. The barrier layer is disposed on the reflective layer, and the area of the barrier layer is smaller than that of the reflective layer therefore the reflective layer is exposed from the barrier layer. The passivation layer is disposed on the barrier layer and partially fills in the openings. The electrical contact layer disposed on the passivation layer partially penetrates through the passivation layer to contact the exposed part of the N-type semiconductor layer.
    Type: Application
    Filed: November 9, 2015
    Publication date: July 7, 2016
    Inventors: Shiou-Yi Kuo, Wen-Yuan Fan
  • Patent number: 9231165
    Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: January 5, 2016
    Assignee: Lextar Electronics Corporation
    Inventors: Wen-Yuan Fan, Nai-Wei Hsu
  • Publication number: 20150187997
    Abstract: A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.
    Type: Application
    Filed: May 5, 2014
    Publication date: July 2, 2015
    Applicant: LEXTAR ELECTRONICS CORPORATION
    Inventors: Wen-Yuan Fan, Nai-Wei Hsu
  • Patent number: 4716634
    Abstract: The present disclosure is concerned with a two piece reinforced clothes peg which is mounted on the transverse rod of a clothes horse, and consists of a pair of jaw members, joined together along one common edge thereof, and a J-shaped clamping member which is detachably engaged with the paired jaw members on the surface of which there are defined properly shaped niches for receiving the legs of the clamping member so that the jaw members can become closely and tightly clamped together for holding a piece of hanged clothes firmly in place with the help of a plurality of projecting stripes defined on the inner surface thereof; and the clamped jaw members can be released by simply pushing upward the front enlarged flange of the J-shaped clamping member.
    Type: Grant
    Filed: May 5, 1987
    Date of Patent: January 5, 1988
    Inventor: Wen-Yuan Fan
  • Patent number: D297484
    Type: Grant
    Filed: September 18, 1986
    Date of Patent: September 6, 1988
    Inventor: Wen-Yuan Fan