Patents by Inventor Wen-Yuan Hsieh

Wen-Yuan Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240120203
    Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.
    Type: Application
    Filed: March 8, 2023
    Publication date: April 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Te-Chih HSIUNG, Yun-Hua CHEN, Bing-Sian WU, Yi-Hsuan CHIU, Yu-Wei CHANG, Wen-Kuo HSIEH, Chih-Yuan TING, Huan-Just LIN
  • Publication number: 20240030329
    Abstract: A semiconductor device includes a substrate, a first and a second nitride-based semiconductor layers, a doped nitride-based semiconductor layer, a gate electrode, a first and a second dielectric protection layers. The second nitride-based semiconductor layer has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The first and the second dielectric protection layers include oxygen. The first dielectric protection layer is conformal with a profile collectively constructed by the gate electrode, the doped nitride-based semiconductor layer, and the second nitride-based semiconductor layer. The second dielectric protection layer is in contact with the first dielectric protection layer. The first dielectric protection layer has an oxygen concentration less than that of the second dielectric protection layer.
    Type: Application
    Filed: August 17, 2021
    Publication date: January 25, 2024
    Inventors: Pan WANG, Wen-Yuan HSIEH, Hung-Yu CHEN
  • Publication number: 20240000978
    Abstract: A method of tracking immune cells to detect immune response. The method including steps of identifying a patient having a disease associated with an organ; administering biocompatible magnetic nanoparticles into the blood stream of the patient; and obtaining a magnetic resonance image of the organ. The presence of hyperintense or hypointense spots in the magnetic resonance image indicates immune response in the patient.
    Type: Application
    Filed: August 7, 2023
    Publication date: January 4, 2024
    Inventors: Chih-Lung Chen, Wen-Yuan Hsieh, Chen-Hsuan Lin, Shian-Jy Wang
  • Publication number: 20230078391
    Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.
    Type: Application
    Filed: November 16, 2022
    Publication date: March 16, 2023
    Inventors: Ming-Cheng Wei, Yuan-Hung Hsu, Wen-Yuan Hsieh, Chia-Wen Huang, Chih-Lung Chen, Jhih-Yun Jian, Shian-Jy Wang
  • Publication number: 20230031662
    Abstract: A III-nitride-based semiconductor wafer is provided that includes a substrate with a central region and a peripheral edge region. One or more intermediate layers may be optionally provided selected from a buffer layer, a seed layer, or a transition layer. A peripheral edge feature is formed in or on a peripheral edge region of the substrate or the transition layer, with one or more peripheral edge passivation layers or peripheral edge surface texturing. The peripheral edge feature extends only around the peripheral edge and not in the central region. One or more III-nitride-based layers is positioned over the central region. In the central region, the III-nitride layer is an epitaxial layer while in the peripheral edge region, it is a polycrystalline layer. Stress due to lattice mismatches and differences in the coefficient of thermal expansion between the III-nitride layer and the substrate is relieved, minimizing defects.
    Type: Application
    Filed: April 2, 2021
    Publication date: February 2, 2023
    Inventors: Kye Jin LEE, Ke WANG, Wen-Yuan HSIEH, Xinhua LI
  • Patent number: 11541007
    Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: January 3, 2023
    Assignee: MegaPro Biomedical Co., Ltd.
    Inventors: Ming-Cheng Wei, Yuan-Hung Hsu, Wen-Yuan Hsieh, Chia-Wen Huang, Chih-Lung Chen, Jhih-Yun Jian, Shian-Jy Wang
  • Publication number: 20220080057
    Abstract: A biocompatible magnetic material containing an iron oxide nanoparticle and one or more biocompatible polymers, each having formula (I) below, covalently bonded to the iron oxide nanoparticle: in which each of variables R, L, x, and y is defined herein, the biocompatible magnetic material contains 4-15% Fe(II) ions relative to the total iron ions. Also disclosed in a method of preparing the biocompatible magnetic material.
    Type: Application
    Filed: November 24, 2021
    Publication date: March 17, 2022
    Inventors: Wen-Yuan Hsieh, Yuan-Hung Hsu, Chia-Wen Huang, Ming-Cheng Wei, Chih-Lung Chen, Shian-Jy Wang
  • Publication number: 20210120987
    Abstract: A cup structure comprises an inner cup and an outer cup. A groove is formed on an outer surface of the inner cup and concaved from the outer surface to an inner surface. The inner cup is completely or partly wrapped by the outer cup. The groove of the inner cup and a portion of the outer cup form a fluid channel. Suction holes are formed at two ends of the fluid channel. Thereby, the user can suck the material inside the cup structure. Further, the cup structure can be disassembled conveniently for cleaning.
    Type: Application
    Filed: October 28, 2020
    Publication date: April 29, 2021
    Inventors: YU-YU KAO, WEN-YUAN HSIEH
  • Publication number: 20200360287
    Abstract: A pharmaceutical composition containing a mixed polymeric micelle and a drug enclosed in the micelle, in which the mixed polymeric micelle, 1 to 1000 nm in size, includes an amphiphilic block copolymer and a lipopolymer. Also disclosed are preparation of the pharmaceutical composition and use thereof for treating cancer.
    Type: Application
    Filed: May 16, 2019
    Publication date: November 19, 2020
    Inventors: Ming-Cheng Wei, Yuan-Hung Hsu, Wen-Yuan Hsieh, Chia-Wen Huang, Chih-Lung Chen, Jhih-Yun Jian, Shian-Jy Wang
  • Publication number: 20190247522
    Abstract: A biocompatible magnetic material containing an iron oxide nanoparticle and one or more biocompatible polymers, each having formula (I) below, covalently bonded to the iron oxide nanoparticle: in which each of variables R, L, x, and y is defined herein, the biocompatible magnetic material contains 4-15% Fe(II) ions relative to the total iron ions. Also disclosed in a method of preparing the biocompatible magnetic material.
    Type: Application
    Filed: November 29, 2018
    Publication date: August 15, 2019
    Inventors: Wen-Yuan Hsieh, Yuan-Hung Hsu, Chia-Wen Huang, Ming-Cheng Wei, Chih-Lung Chen, Shian-Jy Wang
  • Patent number: 9633920
    Abstract: The present disclosure relates to a structure and method of forming a low damage passivation layer for III-V HEMT devices. In some embodiments, the structure has a bulk buffer layer disposed over a substrate and a device layer of III-V material disposed over the bulk buffer layer. A source region, a drain region and a gate region are disposed above the device layer. The gate region comprises a gate electrode overlying a gate separation layer. A bulk passivation layer is arranged over the device layer, and an interfacial layer of III-V material is disposed between the bulk passivation layer and the device layer in such a way that the source region, the drain region and the gate region extend through the bulk passivation layer and the interfacial layer, to abut the device layer.
    Type: Grant
    Filed: February 12, 2015
    Date of Patent: April 25, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Han-Chin Chiu, Cheng-Yuan Tsai, Ming-Wei Tsai, Yao-Wen Chang, Wen-Yuan Hsieh
  • Patent number: 9492399
    Abstract: A method of treating a condition related to iron deficiency. The method includes steps of identifying a patient having a condition related to iron deficiency and administering an effective amount of biocompatible iron oxide nanoparticles to the patient. The biocompatible iron oxide nanoparticles each contains an iron oxide core that is covered by one or more biocompatible polymers, each of which has a polyethylene glycol group, a silane group, and a linker linking, via a covalent bond, the polyethylene glycol group and the silane group.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: November 15, 2016
    Assignee: MegaPro Biomedical Co., Ltd.
    Inventors: Chih-Lung Chen, Wen-Yuan Hsieh, Chen-Hsuan Lin, Su-Yo Lin, Shin-Yi Huang, Yuan-Hung Hsu, Shian-Jy Wang, Hsin Jung Huang
  • Publication number: 20160240646
    Abstract: The present disclosure relates to a structure and method of forming a low damage passivation layer for III-V HEMT devices. In some embodiments, the structure has a bulk buffer layer disposed over a substrate and a device layer of III-V material disposed over the bulk buffer layer. A source region, a drain region and a gate region are disposed above the device layer. The gate region comprises a gate electrode overlying a gate separation layer. A bulk passivation layer is arranged over the device layer, and an interfacial layer of III-V material is disposed between the bulk passivation layer and the device layer in such a way that the source region, the drain region and the gate region extend through the bulk passivation layer and the interfacial layer, to abut the device layer.
    Type: Application
    Filed: February 12, 2015
    Publication date: August 18, 2016
    Inventors: Han-Chin Chiu, Cheng-Yuan Tsai, Ming-Wei Tsai, Yao-Wen Chang, Wen-Yuan Hsieh
  • Publication number: 20160008292
    Abstract: A method of treating a condition related to iron deficiency. The method includes steps of identifying a patient having a condition related to iron deficiency and administering an effective amount of biocompatible iron oxide nanoparticles to the patient. The biocompatible iron oxide nanoparticles each contains an iron oxide core that is covered by one or more biocompatible polymers, each of which has a polyethylene glycol group, a silane group, and a linker linking, via a covalent bond, the polyethylene glycol group and the silane group.
    Type: Application
    Filed: July 10, 2015
    Publication date: January 14, 2016
    Inventors: Chih-Lung Chen, Wen-Yuan Hsieh, Chen-Hsuan Lin, Su-Yo Lin, Shin-Yi Huang, Yuan-Hung Hsu, Shian-Jy Wang, Hsin Jung Huang
  • Publication number: 20160008491
    Abstract: A method of tracking immune cells to detect immune response. The method including steps of identifying a patient having a disease associated with an organ; administering biocompatible magnetic nanoparticles into the blood stream of the patient; and obtaining a magnetic resonance image of the organ. The presence of hyperintense or hypointense spots in the magnetic resonance image indicates immune response in the patient.
    Type: Application
    Filed: July 10, 2015
    Publication date: January 14, 2016
    Inventors: Chih-Lung Chen, Wen-Yuan Hsieh, Chen-Hsuan Lin, Shian-Jy Wang
  • Patent number: 5971373
    Abstract: A buffer device has a plurality of positioning seats, a base seat disposed on the positioning seats, and a main cylinder and a plurality of auxiliary cylinders disposed on the base seat. The base seat has a main oil channel, a plurality of oil inlet channels communicating with the main oil channel, and a plurality of oil return channels communicating with the main oil channel. The main oil channel communicates with the auxiliary cylinders. The oil inlet channels communicate with the main cylinder. Each oil inlet channel has a one-way valve. The oil return channels communicate with the main cylinder. A release valve blocks each oil return channel. A compression spring is disposed in the main cylinder. A piston rod extends from the main cylinder. Each auxiliary cylinder has a coiled spring and a piston.
    Type: Grant
    Filed: January 29, 1998
    Date of Patent: October 26, 1999
    Inventor: Wen-Yuan Hsieh