Abstract: The invention is directed to a process and more particularly, to utilizing polymer solutions to make thick film compositions. In one embodiment the process is directed to the formation of photoimageable thick film compositions for use in photo-patterning methods to make photoimageable electrodes in flat panel display applications, including plasma display panels (PDP). Polymer solutions are obtained by directly polymerizing desired monomers in a desired solvent to form a desired polymer, rather than by dissolving a pre-made polymer in a desired solvent. Other ingredients are added to the polymer solution to directly form thick film pastes, including photoimageable thick film pastes.

Abstract: A method of manufacturing an N-channel metal-oxide-semiconductor (NMOS) transistor with a P-type gate is provided. A substrate is provided and then a gate dielectric layer is formed over the substrate. An indium doped polysilicon layer is formed over the gate dielectric layer in an in-situ deposition process. The indium doped polysilicon layer and the gate dielectric layer are patterned to form a gate structure. An N-doped source/drain region is formed in the substrate beside the gate structure to form the P-type gate NMOS transistor. Since the indium doped polysilicon layer is formed in an in-situ deposition process instead of boron implantation, lattice defects in the gate are minimized the problem of penetration for boron ions is solved.