Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract: The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract: The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.

Abstract: A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.

Abstract: The present invention relates to a method of forming a nitride semiconductor substrate. This method includes steps of providing a substrate and then forming an epitaxy layer on the substrate. A patterned mask layer is formed on the epitaxy layer, wherein the patterned mask layer exposes a portion of the epitaxy layer. Next, an oxidation process is performed to oxidize the exposed epitaxy layer so as to form a plurality of dislocation blocking structures. The patterned mask layer is then removed. Further, a nitride semiconductor layer is formed on the epitaxy layer having the dislocation blocking structures.

Abstract: A fabricating method of nitride semiconductor substrate is provided. First, a first substrate including a first base material, a nitride semiconductor template layer stacked on the first base material, and a first dielectric layer stacked on the nitride semiconductor template layer is provided. Then, the first dielectric layer and the nitride semiconductor template layer are patterned, and a second substrate including a second base material and a second dielectric layer stacked on the second base material is provided. Next, the nitride semiconductor template layer and the first dielectric layer of the first substrate are transferred onto the second dielectric layer of the second substrate through bonding and transferring processes, and then a nitride semiconductor thick film is grown from the nitride semiconductor template layer through an epitaxy process. After that, the nitride semiconductor thick film and the second substrate are separated.

Abstract: The invention is directed to a group-III nitride vertical-rods substrate. The group-III vertical-rods substrate comprises a substrate, a buffer layer and a vertical rod layer. The buffer layer is located over the substrate. The vertical rod layer is located on the buffer layer and the vertical rod layer is comprised of a plurality of vertical rods standing on the buffer layer.