Abstract: An ophthalmic laser system and related method for forming a lenticular incision in a corneal lenticule extraction procedure. The lenticular incision is formed by multiple sweeps of a laser scan line along meridians of longitude of the lenticular incision, where the end point of each sweep is connected to the start point of the next sweep by a smooth turning trajectory. The trajectory includes a first circular arc tangentially connected to the first sweep at its end point, a second circular arc tangentially connected to the next sweep at its start point, and a straight line segment tangentially connected to both circular arcs. The smooth trajectory is determined with the given limits of velocity, acceleration and jerk of the XY scanning motors, without using high frequency filters to smooth the trajectory, thereby avoiding unknown changes to the original trajectory and achieving high precision lenticule shapes.

Abstract: An ophthalmic surgical laser system and method for forming a lenticule in a subject's eye using “fast-scan-slow-sweep” scanning scheme. A high frequency scanner forms a fast scanline, which is placed tangential to a parallel of latitude of the surface of the lenticule and then moved in a slow sweep trajectory along a meridian of longitude of the surface of the lenticule in one sweep. Multiple sweeps are performed along different meridians to form the entire lenticule surface, with the orientation of the scanline rotated between successive sweeps. To reduce acceleration and jerk in the XY stage motion, especially during transition from one sweep to the next, the sweeping speed profile is a sigmoid function.

Abstract: A method implemented in an ophthalmic surgical laser system that employs a resonant scanner, scan line rotator, and XY- and Z-scanners, for forming a corneal flap in a patient's eye with improved bubble management during each step of the flap creation process. A pocket cut is formed first below bed level, followed by the bed connected to the pocket cut, then by a side cut extending from the bed to the anterior corneal surface. The pocket cut includes a pocket region located below the bed level and a ramp region connecting the pocket region to the bed. The bed is formed by a bed cut, including multiple overlapping parallel raster scan passes, and a ring cut. The side cut is formed by multiple side-cut layers at different depths which are joined together. All cuts are formed by scanning a laser scan line generated by the resonant scanner.

Abstract: An ophthalmic laser system and related method for forming a lenticular incision in a corneal lenticule extraction procedure. The lenticular incision is formed by multiple sweeps of a laser scan line along meridians of longitude of the lenticular incision, where the end point of each sweep is connected to the start point of the next sweep by a smooth turning trajectory. The trajectory includes a first circular arc tangentially connected to the first sweep at its end point, a second circular arc tangentially connected to the next sweep at its start point, and a straight line segment tangentially connected to both circular arcs. The smooth trajectory is determined with the given limits of velocity, acceleration and jerk of the XY scanning motors, without using high frequency filters to smooth the trajectory, thereby avoiding unknown changes to the original trajectory and achieving high precision lenticule shapes.

Abstract: Mechanical condition monitoring of robots can be used to detect unexpected failure of robots. Data taken from a robot operation is processed and compared against a health baseline. Features extracted during the monitoring stage of robot operation are aligned with features extracted during the training stage in which the health baseline is established by projecting both onto a common subspace. A classifier which can include a distance assessment such as an L2-norm is used within the common subspace to assess the condition of the robot. Excursions of the distance assessment from a criteria indicate a failure or potential failure.

Abstract: Mechanical condition monitoring of robots can be used to detect unexpected failure of robots. Data taken from a robot operation is processed and compared against a health baseline. Features extracted during the monitoring stage of robot operation are aligned with features extracted during the training stage in which the health baseline is established by projecting both onto a common subspace. A classifier which can include a distance assessment such as an L2-norm is used within the common subspace to assess the condition of the robot. Excursions of the distance assessment from a criteria indicate a failure or potential failure.

Abstract: Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of a first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.

Abstract: Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of an first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.

Abstract: An integrated circuit system that includes: providing a substrate including an active device with a gate and a gate dielectric; forming a first liner, a first spacer, a second liner, and a second spacer adjacent the gate; forming a material layer over the integrated circuit system; forming an opening between the material layer and the first spacer by removing a portion of the material layer, the second spacer, and the second liner to expose the substrate; and forming a source/drain extension and a halo region through the opening.

Abstract: An integrated circuit system that includes: providing a substrate; depositing a dielectric on the substrate; depositing an isolation dielectric on the dielectric; forming a trench through the isolation dielectric and the dielectric to expose the substrate; depositing a dielectric liner over the integrated circuit system; processing the dielectric liner to form a trench spacer; and depositing an epitaxial growth within the trench that includes a crystalline orientation that is substantially identical to the substrate.

Abstract: A method for manufacturing an integrated circuit system that includes: providing a substrate; forming a mask layer over the substrate; implanting a first well through an opening in the mask layer into the substrate; and implanting a second well through the mask layer and the opening via a single implant into the substrate.

Abstract: An integrated circuit system that includes: providing a substrate including an active device with a gate and a gate dielectric; forming a first liner, a first spacer, a second liner, and a second spacer adjacent the gate; forming a material layer over the integrated circuit system; forming an opening between the material layer and the first spacer by removing a portion of the material layer, the second spacer, and the second liner to expose the substrate; and forming a source/drain extension and a halo region through the opening.

Abstract: An integrated circuit system that includes: providing a substrate; depositing a dielectric on the substrate; depositing an isolation dielectric on the dielectric; forming a trench through the isolation dielectric and the dielectric to expose the substrate; depositing a dielectric liner over the integrated circuit system; processing the dielectric liner to form a trench spacer; and depositing an epitaxial growth within the trench that includes a crystalline orientation that is substantially identical to the substrate.

Abstract: An improved method for applying stress proximity technique process on a semiconductor device and the improved device is disclosed. In one embodiment, the method utilizes an additional set of sidewall spacers on one or more NFET devices during the fabrication process. This protects the one or more of the NFET devices during the activation of a compressive PFET stress liner, thereby reducing the compressive forces on the one or more NFET devices, and creating a semiconductor device with improved performance.

Abstract: An improved method for applying stress proximity technique process on a semiconductor device and the improved device is disclosed. In one embodiment, the method utilizes an additional set of sidewall spacers on one or more NFET devices during the fabrication process. This protects the one or more of the NFET devices during the activation of a compressive PFET stress liner, thereby reducing the compressive forces on the one or more NFET devices, and creating a semiconductor device with improved performance.

Abstract: Methods for source/drain implantation and strain transfer to a channel of a semiconductor device and a related semiconductor device are disclosed. In one embodiment, the method includes using a first size spacer for deep source/drain implantation adjacent a gate region of a semiconductor device; and using a second, smaller size spacer for silicide formation adjacent the gate region and transferring strain from a stress liner to a channel underlying the gate region. One embodiment of a semiconductor device may include a gate region atop a substrate; a spacer including a spacer core and an outer spacer member about the spacer core; a deep source/drain region within the substrate and distanced from the spacer; and a silicide region within the substrate and overlapping and extending beyond the deep source/drain region, the silicide region aligned to the spacer.

Abstract: Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of an first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.