Abstract: An image stabilization control method for a photographing device includes obtaining attitude information of the photographing device and a device parameter of the photographing device, and adjusting an image stabilization strength of the photographing device based on the attitude information and the device parameter. The device parameter indicating a brightness of an environment in which the photographing device is located.

Abstract: Photographing methods and photographing apparatuses are provided. In one exemplary implementation, a photographing method may include automatically triggering a photographing operation of a camera to capture an image using a combination of software and hardware, automatically correcting the captured image to generate a corrected image, and outputting the corrected image. The exemplary photographing method may provide automatic photographing having less or no user operations relative to previous photographing methods and apparatuses.

Abstract: The invention discloses a method for improving bonding of dangling bonds of silicon atoms. A surface of a wafer is oxidized to form a silicon oxide layer. The upper surface of the silicon oxide layer has a dangling bond. A dielectric layer is disposed on the upper surface of the silicon oxide layer, which is then subjected to an oxygen-enriched oxidation treatment at a preset first temperature. A protective layer is disposed on the upper surface of the dielectric layer. The wafer is then subjected to an annealing treatment. By passing oxidizing gas through the surface of the protective layer, oxygen ions in the oxidizing gas penetrate the dielectric layer to reach wafer surface. After high-temperature annealing treatment, the unsaturated bonds of the silicon atoms are bonded to the oxygen ions on the wafer surface, thereby improving the bonding of the dangling bonds on the wafer surface.

Abstract: The present disclosure provides an image stabilization method. The method includes acquiring a frame of an image to be stabilized and a related exposure time; acquiring first attitude data before the exposure time and second attitude data after the exposure time, wherein the number of the first attitude data is one or more, and the number of the second attitude data is one or more; acquiring a target attitude corresponding to the exposure time based on the first attitude data and the second attitude data; and obtaining a stabilized target image by stabilizing the image to be stabilized according to the target attitude.

Abstract: An image data processing method includes obtaining flight state information of an unmanned aerial vehicle (UAV), selecting a target image processing strategy from a plurality of image processing strategies based on the flight state information, and processing image data obtained by an imaging device carried by the UAV based on the target image processing strategy to obtain processed image data. The plurality of image processing strategies include an image stabilization strategy.

Abstract: The present disclosure provides an image stabilization method. The method includes acquiring a frame of an image to be stabilized and a related exposure time; acquiring first attitude data before the exposure time and second attitude data after the exposure time, wherein the number of the first attitude data is one or more, and the number of the second attitude data is one or more; acquiring a target attitude corresponding to the exposure time based on the first attitude data and the second attitude data; and obtaining a stabilized target image by stabilizing the image to be stabilized according to the target attitude.

Abstract: The invention discloses a method for improving bonding of dangling bonds of silicon atoms. A surface of a wafer is oxidized to form a silicon oxide layer. The upper surface of the silicon oxide layer has a dangling bond. A dielectric layer is disposed on the upper surface of the silicon oxide layer, which is then subjected to an oxygen-enriched oxidation treatment at a preset first temperature. A protective layer is disposed on the upper surface of the dielectric layer. The wafer is then subjected to an annealing treatment. By passing oxidizing gas through the surface of the protective layer, oxygen ions in the oxidizing gas penetrate the dielectric layer to reach wafer surface. After high-temperature annealing treatment, the unsaturated bonds of the silicon atoms are bonded to the oxygen ions on the wafer surface, thereby improving the bonding of the dangling bonds on the wafer surface.

Abstract: A fixing apparatus includes a supporting member defining a through hole and an opening, and a sliding member slidably mounted in the supporting member and including an engaging portion. An operating member is slidably mounted in the supporting member and is configured to slide the sliding member. A first pivoting member is pivotably mounted in the supporting member and is configured to be urged by the operating member. A second pivoting member is pivotably mounted in the supporting member and configured to be rotated by the first pivoting member, so extending a pushing plate out of the opening. In a locked position, the engaging portion extends out of the through hole and the pushing plate is located at a first position. In an unlocked position, the engaging portion is received in the supporting member and the pushing plate is located at a second position.