Abstract: A power device includes a substrate, a drift layer disposed on the substrate, a terminal region and an active region disposed in the drift layer, an electrode layer disposed on the active region, a Schottky contact layer disposed between the electrode layer and the active region, a passivation layer including a first portion that is disposed on the drift layer, and a second portion that is connected to the first portion and that has an end surface distal from the drift layer. The end surface of the second portion is flush with a top surface of the electrode layer distal from the drift layer. Another two power devices are also provided.

Abstract: An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0<x?0.2, and 0?y?0.035, and when y is not 0, x=3y. The second base layer is made of a material InmGa(1-m)As, in which 0.03?m?0.2. The emitter unit is formed on the second base layer 12 opposite to the first base layer 11, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Abstract: A power device includes a substrate, a drift layer disposed on the substrate, a terminal region and an active region disposed in the drift layer, an electrode layer disposed on the active region, a Schottky contact layer disposed between the electrode layer and the active region, a passivation layer disposed on the drift layer, and an isolation layer disposed between the passivation layer and the electrode layer so that the passivation layer and the electrode layer are at least partially separated from each other. The isolation layer, the electrode layer, and the passivation layer each respectively has a thermal expansion coefficient a, b, c, and a>b>c.

Abstract: The present invention relates to data processing technology and discloses a method for visualizing a personal resume, including: acquiring a personal resume information set, constructing an individual resume visualization graph based on an entity relationship of personal resume experience in the personal resume information set, performing person portrait modeling on different persons in the personal resume information set based on the individual resume visualization graph to obtain person portrait data, performing entity clustering on different persons in the personal resume information set based on the person portrait data, constructing an entity distribution visualization graph according to a clustering result, and constructing a person relationship visualization graph based on an entity relationship between different persons in the personal resume information set. The present invention also provides an apparatus, a device, and a computer-readable storage medium for visualizing a personal resume.

Abstract: The present invention relates to a data analysis technology and discloses a method for entity relationship recognition. The method for entity relationship recognition includes: performing sentence segmentation on a to-be-recognized text to obtain a statement text; performing entity recognition on the statement text, and screening all statement texts to obtain a target statement text; performing text fuzzing on the target statement text to obtain a to-be-recognized fuzzy text; acquiring all optional entity relationships and an example sentence text corresponding to each of the optional entity relationships, and likewise performing text fuzzing on the example sentence text to obtain a corresponding example sentence fuzzy text; and screening the example fuzzy text similar to the target statement text, and determining the optional entity relationship corresponding to the screened example sentence text as an entity relationship recognition result.

Abstract: The present disclosure discloses a method for identifying entity relationship pairs, including: acquiring a service text set, classifying service texts in the service text set based on text categories of the service texts to obtain a classified text set; performing entity identification and relationship identification on the classified texts in the classified text set to obtain an entity set and a relationship set; constructing a positive example sample set and a negative example sample set based on the entity set and the relationship set; and re-sampling the negative example sample set based on the positive example sample set to obtain a target entity relationship pair. The present disclosure also discloses an electronic device, an electronic apparatus, and a computer readable storage medium for identifying entity relationship pairs. The present disclosure can improve the accuracy of entity relationship identification.

Abstract: The present invention relates to artificial intelligence and discloses an entity relation mining method, including steps of acquiring enterprise text information, and extracting an enterprise relation instance in the enterprise text information; performing key entity extraction on the enterprise relation instance to obtain a key entity set; identifying an entity relation between key entities in the key entity set and a first relation weight corresponding to the entity relation, and performing weight calculation on the enterprise text information after deletion of the entity relation instance to obtain a second relation weight; and, using an entity relation having the first relation weight or the second relation weight satisfying a preset reference condition as a standard entity relation. The present invention further provides an entity relation mining apparatus, an electronic device and a storage medium. The present invention can improve the accuracy of entity relation mining.

Abstract: An integrated semiconductor structure includes a silicon substrate, a silicon-based semiconductor device, and a nitride-based semiconductor device. The silicon substrate has a first area and a second area. The first area is formed with a trench that has a trench surface with a (111) orientation. The second area has an area surface with a (100) orientation. The silicon-based semiconductor device is disposed on the area surface with the (100) orientation. The nitride-based semiconductor device is disposed on the trench surface with the (111) orientation. A method for making the integrated semiconductor structure includes: a) providing a silicon substrate having first and second areas each having an area surface; b) forming a silicon-based semiconductor device on the area surface of the second area; c) wet etching the first area to form a trench having a trench surface; and d) forming a nitride-based semiconductor device on the trench surface.

Abstract: The present disclosure relates to an artificial intelligence technology, and discloses a method, an apparatus, a device, and a storage medium for clustering extraction of entity relationships. The method includes: capturing social relationship data of a user, performing entity recognition operation on the social relationship data to obtain an entity recognition result, and performing reverse marking operation on the social relationship data according to the entity recognition result to obtain a data marking sequence set; performing entity relationship recognition on various data marking sequences in the data marking sequence set to obtain a relationship recognition result, and constructing to obtain an entity-relationship group set; and calculating a character similarity between various entities and a semantic similarity between various entity relationships in the entity-relationship group set, and clustering various entity-relationship groups in the entity-relationship group set.

Abstract: An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0<x?0.2, and 0?y?0.035, and when y is not 0, x=3y. The second base layer is made of a material InmGa(1-m)As, in which 0.03?m?0.2. The emitter unit is formed on the second base layer 12 opposite to the first base layer 11, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Abstract: An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0<x?0.2, and 0?y?0.035, and when y is not 0, x=3y. The second base layer is made of a material InmGa(1-m)As, in which 0.03?m?0.2. The emitter unit is formed on the second base layer 12 opposite to the first base layer 11, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Abstract: An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Abstract: A radio frequency device includes a substrate, an epitaxial structure, a first electrode, a second electrode, a gate structure, a metal bulk, an auxiliary metal bulk, and a metal connection line. The first/second electrode includes a first/second electrode body and first/second electrode fingers. The gate structure includes a sub-gate having parallel portions and vertical portions alternately connected to one another in series to form a serpentine shape. The auxiliary metal bulk is arranged between corresponding adjacent two parallel portions and between a corresponding vertical portion and an end of a corresponding first electrode finger. The metal bulk is arranged between the auxiliary metal bulk and the vertical portion corresponding to the auxiliary metal bulk. The metal connection line connects the metal bulk to the second electrode body and is insulated from the sub-gate. A radio frequency front-end apparatus including the radio frequency device is also disclosed.

Abstract: Disclosed is a membership analyzing method, including: obtaining data information of all members of a target group; classifying members with same first type information into a data set based on predetermined keywords; obtaining the type of first type information and data sets on condition that all members have been successfully classified into a corresponding data set, otherwise, if there is any remaining member failed to be classified into any data set, inputting data information of the remaining member into a predetermined classification model, to obtain the type of first type information and a data set of each remaining member; determining a tree structure of data sets based on the type of the first type information, and producing a graph for the tree structure; setting a same identification for the nodes of the same data set, and displaying second type information of each member in a display area.

Abstract: An HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially disposed in such order; a source electrode and a drain electrode disposed oppositely on an active region, and a gate electrode including a comb structure disposed in a gate region between the source electrode and the drain electrode. The comb structure includes a comb stem portion and a plurality of comb tooth portions. The comb tooth portions are spaced apart from each other in a gate width direction. The comb stem portion is disposed on the barrier layer. Distances between the comb tooth portions in the gate width direction are unequal and irregular. The comb tooth portions penetrate into the barrier layer to equal depths, and the depths are no smaller than half of a thickness of the barrier layer. A method for making the HEMT device is also provided.

Abstract: The present disclosure provided a lateral field-effect transistor and its preparing method, relating to semiconductor technological field. A gate pad and a source pad configured by the lateral field transistor in a passive region extend from a first surface of a device functional layer to a surface of substrate respectively. The gate pad is isolated from the device functional layer and the substrate respectively. The source pad is shorted to the substrate. Therefore, through a capacitance structure formed between the gate pad and the source pad shorted to the substrate, the capacitance of a device that formed between the gate pad and source pad may be increased, thereby effectively alleviating the generated oscillation, reducing the loss of a power device, and avoiding the false turn-on of the lateral field-effect transistor.

Abstract: A GaN-based compound semiconductor device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the conductive unit are sequentially disposed on the GaN-based epitaxial structure in such order. An ohmic contact is formed between the GaN-based epitaxial structure and the annealed metal layered structure. The protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.

Abstract: A power device includes a substrate, a drift layer disposed on the substrate, a terminal region and an active region disposed in the drift layer, an electrode layer disposed on the active region, a Schottky contact layer disposed between the electrode layer and the active region, a passivation layer disposed on the drift layer, and an isolation layer disposed between the passivation layer and the electrode layer so that the passivation layer and the electrode layer are at least partially separated from each other. The isolation layer, the electrode layer, and the passivation layer each respectively has a thermal expansion coefficient a, b, c, and a>b>c.