Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Abstract: An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0<x?0.2, and 0?y?0.035, and when y is not 0, x=3y. The second base layer is made of a material InmGa(1-m)As, in which 0.03?m?0.2. The emitter unit is formed on the second base layer 12 opposite to the first base layer 11, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Abstract: An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Abstract: A radio frequency device includes a substrate, an epitaxial structure, a first electrode, a second electrode, a gate structure, a metal bulk, an auxiliary metal bulk, and a metal connection line. The first/second electrode includes a first/second electrode body and first/second electrode fingers. The gate structure includes a sub-gate having parallel portions and vertical portions alternately connected to one another in series to form a serpentine shape. The auxiliary metal bulk is arranged between corresponding adjacent two parallel portions and between a corresponding vertical portion and an end of a corresponding first electrode finger. The metal bulk is arranged between the auxiliary metal bulk and the vertical portion corresponding to the auxiliary metal bulk. The metal connection line connects the metal bulk to the second electrode body and is insulated from the sub-gate. A radio frequency front-end apparatus including the radio frequency device is also disclosed.

Abstract: Disclosed is a membership analyzing method, including: obtaining data information of all members of a target group; classifying members with same first type information into a data set based on predetermined keywords; obtaining the type of first type information and data sets on condition that all members have been successfully classified into a corresponding data set, otherwise, if there is any remaining member failed to be classified into any data set, inputting data information of the remaining member into a predetermined classification model, to obtain the type of first type information and a data set of each remaining member; determining a tree structure of data sets based on the type of the first type information, and producing a graph for the tree structure; setting a same identification for the nodes of the same data set, and displaying second type information of each member in a display area.

Abstract: An HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially disposed in such order; a source electrode and a drain electrode disposed oppositely on an active region, and a gate electrode including a comb structure disposed in a gate region between the source electrode and the drain electrode. The comb structure includes a comb stem portion and a plurality of comb tooth portions. The comb tooth portions are spaced apart from each other in a gate width direction. The comb stem portion is disposed on the barrier layer. Distances between the comb tooth portions in the gate width direction are unequal and irregular. The comb tooth portions penetrate into the barrier layer to equal depths, and the depths are no smaller than half of a thickness of the barrier layer. A method for making the HEMT device is also provided.

Abstract: The present disclosure provided a lateral field-effect transistor and its preparing method, relating to semiconductor technological field. A gate pad and a source pad configured by the lateral field transistor in a passive region extend from a first surface of a device functional layer to a surface of substrate respectively. The gate pad is isolated from the device functional layer and the substrate respectively. The source pad is shorted to the substrate. Therefore, through a capacitance structure formed between the gate pad and the source pad shorted to the substrate, the capacitance of a device that formed between the gate pad and source pad may be increased, thereby effectively alleviating the generated oscillation, reducing the loss of a power device, and avoiding the false turn-on of the lateral field-effect transistor.

Abstract: A GaN-based compound semiconductor device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the conductive unit are sequentially disposed on the GaN-based epitaxial structure in such order. An ohmic contact is formed between the GaN-based epitaxial structure and the annealed metal layered structure. The protective unit includes a metal oxide material having one of NiAlO, AuAlO, and a combination thereof.

Abstract: A power device includes a substrate, a drift layer disposed on the substrate, a terminal region and an active region disposed in the drift layer, an electrode layer disposed on the active region, a Schottky contact layer disposed between the electrode layer and the active region, a passivation layer disposed on the drift layer, and an isolation layer disposed between the passivation layer and the electrode layer so that the passivation layer and the electrode layer are at least partially separated from each other. The isolation layer, the electrode layer, and the passivation layer each respectively has a thermal expansion coefficient a, b, c, and a>b>c.

Abstract: Disclosed is a membership analyzing method, including: obtaining data information of all members of a target group; classifying members with same first type information into a data set based on predetermined keywords; obtaining the type of first type information and data sets on condition that all members have been successfully classified into a corresponding data set, otherwise, if there is any remaining member failed to be classified into any data set, inputting data information of the remaining member into a predetermined classification model, to obtain the type of first type information and a data set of each remaining member; determining a tree structure of data sets based on the type of the first type information, and producing a graph for the tree structure; setting a same identification for the nodes of the same data set, and displaying second type information of each member in a display area.

Abstract: A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Abstract: An optical modulator includes a light-emitting device and an upper electrode disposed on the light-emitting device. The upper electrode includes at least one first electrode portion for injecting a direct current to form a direct-current modulated segment, and a second electrode portion for injecting an alternating current to form an alternating-current modulated segment. The at least one first electrode portion and the second electrode portion are spaced apart from each other, and have a first length and a second length, respectively. The first length is greater than the second length. A method for manufacturing the optical modulator is also provided herein.

Abstract: A microelectronic device includes a substrate, at least two doped well regions, an epitaxial structure, and at least two power elements. The doped well regions are disposed in the substrate, and are spaced apart from each other. Each of the doped well regions has a doping type opposite to that of the substrate. The epitaxial structure is disposed on the substrate, and is in contact with the doped well regions. The power elements are disposed on the epitaxial structure opposite to the substrate, and are cascade connected with each other. A low potential terminal of each of the power elements is electrically connected to a respective one of the doped well regions. A method for making the microelectronic device is also provided.

Abstract: An electrostatic discharge protection structure for a nitride-based device having an active region, an electrostatic discharge protection region outside the active region for forming the electrostatic discharge protection structure, and a field plate formed in the active region is provided. The electrostatic discharge protection structure includes a channel layer, and a barrier layer, a first p-type nitride layer and a metal layer formed on the channel layer in such order. The metal layer is electrically connected to the field plate in the active region. A nitride-based device having the electrostatic discharge protection structure and a method for manufacturing a nitride-based device is also disclosed.

Abstract: An epitaxial structure includes a composite base unit and an emitter unit. The composite base unit includes a first base layer and a second base layer formed on the first base layer. The first base layer is made of a material of InxGa(1-x)As(1-y)Ny, in which 0<x?0.2, and 0?y?0.035, and when y is not 0, x=3y. The second base layer is made of a material InmGa(1-m)As, in which 0.03?m?0.2. The emitter unit is formed on the second base layer 12 opposite to the first base layer 11, and is made of an indium gallium phosphide-based material. A transistor including the epitaxial structure is also disclosed.

Abstract: A method of forming an ohmic contact for a gallium nitride-based compound semiconductor device includes the steps of: forming a metal layered structure including a diffusion barrier layer, an aluminum layer and a metallic unit which are sequentially disposed on a GaN-based epitaxial structure; subjecting the metal layered structure to an oxidation treatment in oxygen atmosphere at 350° C. to 650° C. to obtain the oxidized metal layered structure including an aluminum oxide layer; and subjecting the oxidized metal layered structure and the GaN-based epitaxial structure to an alloying treatment in nitrogen atmosphere to form the ohmic contact therebetween. A GaN-based compound semiconductor device is also disclosed.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract: A warm-white-light LED structure combines a red light wafer and a blue light wafer via a bonding layer. A reflecting layer is arranged over upper and lower surfaces of the bonding layer respectively; the lower surface of the red light wafer takes up one-third or less of the upper surface of the blue light wafer, which effectively reduces packaging structure volume and time of bondings so as to optimize process flow and save fabrication cost.