Abstract: An electronic device includes a display and a sensor underneath the display. The display has a full pixel density region and a reduced pixel density region. Compared to pixels in the full pixel density region, pixels in the reduced pixel density region can be controlled using overdriven power supply voltages, overdriven scan control signals, different initialization and reset voltages, and can include capacitors and transistors with different physical and electrical characteristics. Gate drivers provide scan signals to pixels in the full pixel density region, whereas overdrive buffers provide overdrive scan signals to pixels in the reduced pixel density region. The pixels in the full pixel density region and the pixels in the reduced pixel density region can be controlled using different black level or gamma settings for each color channel and can be adjusted physically to match luminance, color, as well as to mitigate differences in temperature and aging impact.

Abstract: A display may have a stretchable portion with hermetically sealed rigid pixel islands. A flexible interconnect region may be interposed between the hermetically sealed rigid pixel islands. The hermetically sealed rigid pixel islands may include organic light-emitting diode (OLED) pixels. A conductive cutting structure may have an undercut that causes a discontinuity in a conductive OLED layer to mitigate lateral leakage. The conductive cutting structure may also be electrically connected to a cathode for the OLED pixels and provide a cathode voltage to the cathode. First and second inorganic passivation layers may be formed over the OLED pixels. Multiple discrete portions of an organic inkjet printed layer may be interposed between the first and second inorganic passivation layers.

Abstract: The present application relates to a touch display panel and an electronic device. The touch display panel includes: a substrate; and a light-emitting unit layer locating on a side of the substrate comprising a cathode metal layer reused as a touch electrode layer and multiple light-emitting units arranged in an array; the light-emitting units each have a light-emitting cycle comprising a first time period and a second time period staggered from the first time period; the cathode metal layer accesses a touch drive signal when the light-emitting cycle is within the first time period, and the cathode metal layer accesses a display drive signal when the light-emitting cycle is within the second time period. The cathode metal layer according to the present application is reused as the touch electrode layer, and inputs different drive signals in different time periods, which can greatly reduce a thickness of the touch display panel.

Abstract: The present disclosure relates to a touch display panel and an electronic device. The touch display panel includes: a substrate; multiple display signal lines arranged on one side of the substrate to provide display signals; multiple touch induction electrodes arranged on one side of each of the display signal lines facing away from the substrate, stacked and arranged at intervals with the display signal lines, and the multiple touch induction electrodes and the multiple display signal lines have overlapped regions; and a shielding layer located between the touch induction electrodes and the display signal lines, at least a part located in the overlapped regions, and used to reduce signal interference between the touch induction electrodes and the display signal lines. Interference between display signals of the display signal lines and touch signals of the touch induction electrodes can be effectively prevent, and signal-to-noise ratio can be effectively increased.

Abstract: The present disclosure relates to a touch display panel and an electronic device. The touch display panel includes: a substrate; and a light-emitting unit layer located on one side of the substrate, where the light-emitting unit layer includes a cathode metal layer, the cathode metal layer forms first touch electrodes and second touch electrodes, and the first touch electrodes are insulated from the second touch electrodes to form a mutual capacitive touch electrode. The touch electrodes of the touch display panel according to the present disclosure are shared with the cathode metal layer, so that the touch display panel is more integrated and has a smaller thickness.

Abstract: The present disclosure discloses an electronic device, including backplane circuits, a plurality of conductive adhesive elements arranged on the backplane circuits at intervals, and a plurality of electronic components arranged on the plurality of conductive adhesive elements respectively. The backplane circuits are respectively electrically connected with the plurality of electronic components through the plurality of conductive adhesive elements. The present disclosure further discloses a manufacturing method used for manufacturing the above electronic device.

Abstract: The method includes providing a rigid base plate; forming an etch-stop layer on one side of the rigid base plate; forming a first flexible substrate on another side of the etch-stop layer; fabricating a plurality of stretchable circuits on the surface of the first flexible substrate facing away from the etch-stop layer; etching a first flexible substrate between two adjacent stretchable circuits to form a through hole; forming a first elastic layer that covers the plurality of stretchable circuits and fills the through hole; separating the rigid base plate and the etch-stop layer; and forming a second elastic layer opposite to the first elastic layer such that the plurality of stretchable circuits is encircled by the first and second elastic layers.

Abstract: A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber. The gas is formed into an in-situ plasma in the etch chamber. A bias of about 10 to about 100 volts is provided to accelerate helium ions to the stack and activate a surface of the stack to form an activated surface for ion-assisted etching, wherein the in-situ plasma etches the activated surface of the stack.

Abstract: A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber. The gas is formed into an in-situ plasma in the etch chamber. A bias of about 10 to about 100 volts is provided to accelerate helium ions to the stack and activate a surface of the stack to form an activated surface for ion-assisted etching, wherein the in-situ plasma etches the activated surface of the stack.