Patents by Inventor Wenbo Shao
Wenbo Shao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11965089Abstract: A microspheric ionomer having a cross-linked structure, a preparation method therefor, applications thereof, and a preparation system thereof. The ionomer comprises structure units A represented by formula (1), structure units B represented by formula (2), and a cross-linking structure provided by a cross-linking agent, M being separately selected from H, a metal cation, and a straight chain, a saturated alkyl of branched or ring-shaped C1-C20, R being H or a methyl; and metal cations are introduced to part of structure units A in the ionomer. The ionomer shows an outstanding effect on nucleation of PET, serves as a nucleating agent for PET modification, so as to obtain a corresponding PET composition.Type: GrantFiled: October 25, 2018Date of Patent: April 23, 2024Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, BEIJING RESEARCH INSTITUTE OF CHEMICAL INDUSTRY, CHINA PETROLEUM & CHEMICAL CORPORATIONInventors: Wenbo Song, Hao Yuan, Zhenjie Liu, Jinliang Qiao, Shijun Zhang, Hua Yin, Huijie Hu, Qing Shao, Jie Zhang, Xiaomeng Zhang, Dezhan Li, Fuyong Bi
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Publication number: 20230407467Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: ApplicationFiled: September 6, 2023Publication date: December 21, 2023Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Patent number: 11846018Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: GrantFiled: February 7, 2022Date of Patent: December 19, 2023Assignee: MacDermid Enthone Inc.Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Publication number: 20220259724Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.Type: ApplicationFiled: February 7, 2022Publication date: August 18, 2022Inventors: Richard W. Hurtubise, Eric Yakobson, Shaopeng Sun, Taylor L. Wilkins, Elie H. Najjar, Wenbo Shao
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Publication number: 20220064811Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.Type: ApplicationFiled: January 31, 2020Publication date: March 3, 2022Inventors: Eric Yakobson, Shaopeng Sun, Elie Najjar, Thomas Richardson, Vincent Paneccasio, Jr., Wenbo Shao, Kyle Whitten
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Patent number: 10541140Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.Type: GrantFiled: January 26, 2012Date of Patent: January 21, 2020Assignee: MACDERMID ENTHONE INC.Inventors: Thomas B. Richardson, Joseph A. Abys, Wenbo Shao, Chen Wang, Vincent Paneccasio, Jr., Cai Wang, Xuan Lin, Theodore Antonellis
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Patent number: 10221496Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.Type: GrantFiled: May 24, 2011Date of Patent: March 5, 2019Assignee: MacDermid Enthone Inc.Inventors: Thomas B. Richardson, Wenbo Shao, Xuan Lin, Cai Wang, Vincent Paneccasio, Jr., Joseph A. Abys, Yun Zhang, Richard Hurtubise, Chen Wang
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Publication number: 20190003068Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.Type: ApplicationFiled: May 24, 2011Publication date: January 3, 2019Applicant: ENTHONE INC.Inventors: Thomas B. Richardson, Wenbo Shao, Xuan Lin, Cai Wang, Vincent Paneccasio, JR., Joseph A. Abys, Yun Zhang, Richard Hurtubise, Chen Wang
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Patent number: 10103029Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.Type: GrantFiled: May 6, 2016Date of Patent: October 16, 2018Assignee: MacDermid Enthone Inc.Inventors: Thomas B. Richardson, Joseph A. Abys, Wenbo Shao, Chen Wang, Vincent Paneccasio, Cai Wang, Sean Xuan Lin, Theodore Antonellis
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Publication number: 20160254156Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.Type: ApplicationFiled: May 6, 2016Publication date: September 1, 2016Inventors: Thomas B. Richardson, Joseph A. Abys, Wenbo Shao, Chen Wang, Vincent Paneccasio, Cai Wang, Xuan Lin, Theodore Antonellis
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Publication number: 20140120722Abstract: A process for metalizing a through silicon via feature in a semiconductor integrated circuit device, the process including, during the filling cycle, reversing the polarity of circuit for an interval to generate an anodic potential at said metalizing substrate and desorb leveler from the copper surface within the via, followed by resuming copper deposition by re-establishing the surface of the copper within the via as the cathode in the circuit, thereby yielding a copper filled via feature.Type: ApplicationFiled: January 26, 2012Publication date: May 1, 2014Applicant: ENTHONE INC.Inventors: Thomas B. Richardson, Joseph A. Abys, Wenbo Shao, Chen Wang, Vincent Paneccasio, JR., Cai Wang, Xuan Lin, Theodore Antonellis
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Publication number: 20130199935Abstract: A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate. The method comprises immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition, wherein the through silicon via feature has an entry dimension between 1 micrometers and 100 micrometers, a depth dimension between 20 micrometers and 750 micrometers, and an aspect ratio greater than about 2:1; and supplying electrical current to the electrolytic deposition composition to deposit copper metal onto the bottom and sidewall for bottom-up filling to thereby yield a copper filled via feature.Type: ApplicationFiled: May 24, 2011Publication date: August 8, 2013Applicant: ENTHONE INC.Inventors: Thomas B. Richardson, Wenbo Shao, Xuan Lin, Cai Wang, Vincent Paneccasio, JR., Joseph A. Abys, Yun Zhang, Richard Hurtubise, Chen Wang