Abstract: The present invention provides a polypeptide complex on the basis of Titin-Telethonin beta-pleated sheet structure as a polypeptide or protein drug carrier, a method of using the polypeptide complex, and a fusion protein complex thereof. The polypeptide complex is capable of maintaining the activity of polypeptide or protein drugs and prolonging the half-life period simultaneously.

Abstract: The present invention provides a polypeptide complex on the basis of Titin-Telethonin beta-pleated sheet structure as a polypeptide or protein drug carrier, a method of using the polypeptide complex, and a fusion protein complex thereof. The polypeptide complex is capable of maintaining the activity of polypeptide or protein drugs and prolonging the half-life period simultaneously.

Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Abstract: Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Abstract: A method fabricates a magnetic transducer. A sacrificial leading shield is provided on an etch stop layer. A nonmagnetic layer is provided on the sacrificial leading shield. A pole trench is formed in the nonmagnetic layer and on the sacrificial leading shield. A pole is formed. The pole has a bottom and a top wider than the bottom in a pole tip region. Part of the pole in the pole tip region is in the pole trench and at the ABS location. The sacrificial leading shield and part of the nonmagnetic layer adjacent to the pole are removed. An air bridge thus resides in place of the sacrificial leading shield between the portion of the pole and the etch stop layer. As least one shield layer is provided. The at least one shield layer substantially fills the air bridge and form a monolithic shield including a leading and side shields.

Abstract: A method for fabricating a transducer on a substrate is described. The transducer includes an antiferromagnetic seed structure. The antiferromagnetic seed structure includes a first NiFe layer, a first multilayer including a first Ru layer, a second NiFe layer, and a second multilayer including a second Ru layer. The second multilayer, the second NiFe layer and part of the first Ru layer are removed using a first wet etch, which uses a first etchant combination to remove NiFe and in which Ru is insoluble. The second Ru layer is removed through lift-off due to etching of the second NiFe layer. A remainder of the first Ru layer is removed through a second wet etch, which uses a second etchant combination to remove Ru. A remaining portion of the first multilayer and the first NiFe layer are removed through a third etch, which uses a third etchant combination that removes NiFe.

Abstract: A method and system for fabricating a microelectric device are described. A write pole of an energy assisted magnetic recording head or a capacitor might be fabricated. The method includes depositing a resist film and curing the resist film at a temperature of at least 180 degrees centigrade. A cured resist film capable of supporting a line having an aspect ratio of at least ten is thus provided. A portion of the cured resist film is removed. A remaining portion of the resist film forms the line. An insulating or nonmagnetic layer is deposited after formation of the line. The line is removed to provide a trench in the insulating or nonmagnetic layer. The trench has a height and a width. The height divided by the width corresponds to the aspect ratio. At least part of the structure is provided in the trench.

Abstract: An apparatus such as a light source is disclosed which has an OLED device and an index bridging elastomer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The elastomer bridges the refractive index between the substrate and an intended target for said apparatus.

Abstract: An electroluminescent device utilizes a plurality of embodiments to minimize the variation in luminance due to changes in the voltage across the device. These include a highly conductive hole injection layer in a bi-layer device, a thick hoe transporting interlayer in a tri-layer device and the addition of an external resistor in series with the device.

Abstract: A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.

Abstract: An apparatus such as a light source is disclosed which has an OLED device and an index bridging elastomer disposed on the substrate or transparent electrode of said OLED device and on the exterior of said OLED device. The elastomer bridges the refractive index between the substrate and an intended target for said apparatus.

Abstract: An electroluminescent device utilizes a plurality of embodiments to minimize the variation in luminance due to changes in the voltage across the device. These include a highly conductive hole injection layer in a bi-layer device, a thick hoe transporting interlayer in a tri-layer device and the addition of an external resistor in series with the device.

Abstract: A fully solution-processed polymer electroluminescent device has a hole injection layer fabricated using a crosslinkable hole injection/transport material doped with conductivity dopants.

Abstract: An electroluminescent device has a hole injection layer fabricated using a conducting polymer with acid dopant in which acidic hydrogen ions are replaced with selected organic and inorganic other ions. The device has a three layer organic stack, including an emissive layer and a hole transporting interlayer which is rendered insoluble to the solvent used for fabricating the emissive layer through crosslinking or polarity adjustment.