Patents by Inventor Wendy G. Ahearn
Wendy G. Ahearn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9449824Abstract: A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.Type: GrantFiled: April 24, 2014Date of Patent: September 20, 2016Assignee: Natcore Technology, Inc.Inventors: David H. Levy, Daniele Margadonna, Dennis Flood, Wendy G. Ahearn, Richard W. Topel, Jr., Theodore Zubil
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Patent number: 9324899Abstract: In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.Type: GrantFiled: June 9, 2015Date of Patent: April 26, 2016Assignee: Natcore Technology, Inc.Inventors: Wendy G. Ahearn, David Howard Levy, Richard W. Topel, Jr., Theodore Zubil
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Patent number: 9306094Abstract: Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device.Type: GrantFiled: August 25, 2014Date of Patent: April 5, 2016Assignee: Natcore Technology, Inc.Inventors: David Howard Levy, Theodore Zubil, Richard W. Topel, Jr., Wendy G. Ahearn
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Patent number: 9236509Abstract: Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.Type: GrantFiled: April 24, 2014Date of Patent: January 12, 2016Assignee: Natcore Technology, Inc.Inventors: David H. Levy, Daniele Margadonna, Dennis Flood, Wendy G. Ahearn, Richard W. Topel, Jr., Theodore Zubil
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Publication number: 20150357506Abstract: In some cases, it is desirable to perform doping when manufacturing a solar cell to improve efficiency. Dopant diffusion may include the steps of: (a) an initial temperature ramp, (b) dopant vapor flow, (c) drive-in, and (d) cool down. However, doping may result in excessive doping, such as in regions where the solar cell has been nanoscale textured to provide black silicon, thereby creating a dead zone with excessive recombination of charge carriers. In the systems and method discussed herein, dopant vapor flow and drive-in steps may be performed at two different temperature set points to minimize or eliminate the formation of dead zones. In some embodiments, the dopant vapor flow may be performed at a lower temperature set point than the drive-in.Type: ApplicationFiled: June 9, 2015Publication date: December 10, 2015Applicant: Natcore Technology, Inc.Inventors: Wendy G. Ahearn, David Howard Levy, Richard W. Topel, JR., Theodore Zubil
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Publication number: 20150056818Abstract: Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device.Type: ApplicationFiled: August 25, 2014Publication date: February 26, 2015Applicant: Natcore Technology, Inc.Inventors: David Howard Levy, Theodore Zubil, Richard W. Topel, JR., Wendy G. Ahearn
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Publication number: 20140322906Abstract: A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.Type: ApplicationFiled: April 24, 2014Publication date: October 30, 2014Applicant: Natcore Technology, Inc.Inventors: David H. Levy, Daniele Margadonna, Dennis Flood, Wendy G. Ahearn, Richard W. Topel, JR., Theodore Zubil
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Publication number: 20140322858Abstract: Systems and methods for producing nanoscale textured low reflectivity surfaces may be utilized to fabricate solar cells. A substrate may be patterned with a resist prior to an etching process that produces a nanoscale texture on the surface of the substrate. Additionally, the substrate may be subjected to a dopant diffusion process. Prior to dopant diffusion, the substrate may be optionally subjected to liquid phase deposition to deposit a material that allows for patterned doping. The order of the nanoscale texture etching and dopant diffusion may be modified as desired to produce post-nano emitters or pre-nano emitters.Type: ApplicationFiled: April 24, 2014Publication date: October 30, 2014Applicant: Natcore Technology, Inc.Inventors: David H. Levy, Daniele Margadonna, Dennis Flood, Wendy G. Ahearn, Richard W. Topel, JR., Theodore Zubil
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Patent number: 8692238Abstract: An organic film-forming polymer has a Tg of at least 70° C. and comprises a backbone comprising recurring units of Structure (A) shown in this application. These organic film-forming polymers can be used as dielectric materials in various devices with improved properties such as improved mobility.Type: GrantFiled: April 25, 2012Date of Patent: April 8, 2014Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Douglas R. Robello, Mark R. Mis, Wendy G. Ahearn, Dianne M. Meyer
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Publication number: 20130285061Abstract: An organic film-forming polymer has a Tg of at least 70° C. and comprises a backbone comprising recurring units of Structure (A) shown in this application. These organic film-forming polymers can be used as dielectric materials in various devices with improved properties such as improved mobility.Type: ApplicationFiled: April 25, 2012Publication date: October 31, 2013Inventors: Deepak Shukla, Douqlas R. Robello, Mark R. Mis, Wendy G. Ahearn, Dianne M. Meyer
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Patent number: 8530270Abstract: An amic acid or amic ester precursor can be applied to a substrate and thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated precursor compound.Type: GrantFiled: April 30, 2010Date of Patent: September 10, 2013Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Patent number: 8450726Abstract: An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices.Type: GrantFiled: May 27, 2010Date of Patent: May 28, 2013Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Patent number: 8431433Abstract: A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.Type: GrantFiled: May 27, 2010Date of Patent: April 30, 2013Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Patent number: 8411489Abstract: An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.Type: GrantFiled: April 30, 2010Date of Patent: April 2, 2013Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Patent number: 8404892Abstract: Aromatic non-polymeric amic acid salts are designed to be thermally converted into corresponding arylene diimides. These aromatic, non-polymeric amic acid salts can be used to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the amic acid salt acts as an internal catalyst.Type: GrantFiled: May 27, 2010Date of Patent: March 26, 2013Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Patent number: 8314265Abstract: Novel amic acids and amic esters can be thermally converted into corresponding arylene diimides. These amic acids and amic ester can be used as precursors to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimides need not be coated out of solvent in which they may be insoluble, but they can be generated in situ from a solvent-soluble, easily coated amic acid or amic ester.Type: GrantFiled: April 30, 2010Date of Patent: November 20, 2012Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Publication number: 20120122664Abstract: A photoinitiator composition comprises at least one N-oxyazinium salt photoinitiator, a photosensitizer for the N-oxyazinium salt photoinitiator, and an N-oxyazinium salt efficiency amplifier, such as a phosphite. This composition can be used to photocure or polymerize acrylates or other polymerizable compounds.Type: ApplicationFiled: November 15, 2010Publication date: May 17, 2012Inventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Publication number: 20110291076Abstract: An article includes a flexible or rigid substrate and dry layer comprising an aromatic, non-polymeric amic acid salt that can be thermally converted to a corresponding arylene diimide. Upon conversion of the aromatic, non-polymeric amic acid salt, the dry layer has semiconductive properties and can be used in various devices including thin-film transistor devices.Type: ApplicationFiled: May 27, 2010Publication date: December 1, 2011Inventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Publication number: 20110295010Abstract: Aromatic non-polymeric amic acid salts are designed to be thermally converted into corresponding arylene diimides. These aromatic, non-polymeric amic acid salts can be used to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the amic acid salt acts as an internal catalyst.Type: ApplicationFiled: May 27, 2010Publication date: December 1, 2011Inventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn
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Publication number: 20110294257Abstract: A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.Type: ApplicationFiled: May 27, 2010Publication date: December 1, 2011Inventors: Deepak Shukla, Dianne M. Meyer, Wendy G. Ahearn