Patents by Inventor Wendy Nguyen

Wendy Nguyen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for bilayer resist plasma etch
    Patent number: 7141505
    Abstract: A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched.
    Type: Grant
    Filed: June 30, 2004
    Date of Patent: November 28, 2006
    Assignee: Lam Research Corporation
    Inventors: Wendy Nguyen, Chris Lee
  • Method and compositions for hardening photoresist in etching processes
    Publication number: 20050230352
    Abstract: A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
    Type: Application
    Filed: June 20, 2005
    Publication date: October 20, 2005
    Inventors: Yousun Taylor, Wendy Nguyen, Chris Lee
  • Method and compositions for hardening photoresist in etching processes
    Patent number: 6923920
    Abstract: A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: August 2, 2005
    Assignee: Lam Research Corporation
    Inventors: Yousun Kim Taylor, Wendy Nguyen, Chris G. N. Lee
  • Method for bilayer resist plasma etch
    Publication number: 20050023242
    Abstract: A method for etching a bilayer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the bilayer resist into the etch chamber. Then SiCl4 gas flows into the etch chamber. Next, a plasma is struck in the etch chamber while flowing the SiCl4 gas. Then the bilayer resist is etched.
    Type: Application
    Filed: June 30, 2004
    Publication date: February 3, 2005
    Inventors: Wendy Nguyen, Chris Lee
  • Method and compositions for hardening photoresist in etching processes
    Publication number: 20040079727
    Abstract: A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
    Type: Application
    Filed: August 14, 2002
    Publication date: April 29, 2004
    Applicant: Lam Research Corporation
    Inventors: Yousun Kim Taylor, Wendy Nguyen, Chris G.N. Lee