Patents by Inventor Weng-Chung Liao

Weng-Chung Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7618574
    Abstract: A synthesis for a silated acidic polymer by a copolymerization of several monomers includes one acidic monomer and one silated monomer. The silated acidic polymer is used as a resist barrier in imprint lithography and is easily removed by an environmental basic aqua-solution during the stripping process without using RIE (reactive ion etching) process or organic solvent at the last step of resist stripping so that the throughput is enhanced and good etching resistibility together with cost-saving is obtained.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: November 17, 2009
    Assignee: National Cheng Kung University
    Inventors: Lien-Chung Hsu, Weng-Chung Liao, Min-Hsiung Hon, Chau-Nan Hong
  • Publication number: 20070205180
    Abstract: A polymer resist having a good flow is used in a nanoimprint lithography. A residual layer remained is thus thinner. Hence, a time spent for etching the residual layer is reduced. And a pattern obtained after the nanoimprint lithography will not be ruined because of a long-time etching. Nevertheless, the present invention can be applied on a hard substrate, like a silicon chip, or a soft substrate, like PET.
    Type: Application
    Filed: January 19, 2007
    Publication date: September 6, 2007
    Applicant: National Cheng Kung University
    Inventors: Weng-Chung Liao, Steve Hsu, Min-Hsiung Hon, Chau-Nan Hong
  • Publication number: 20070012652
    Abstract: The present invention processes a synthesis for a silated acidic polymer by a copolymerization of several monomers including one acidic monomer and one silated monomer. The silated acidic polymer is used as a resist barrier in imprint lithography and is easily removed by an environmental basic aqua-solution during the stripping process without using RIE (reactive ion etching) process or organic solvent at the last step of resist stripping so that the throughput is enhanced and good etching resistibility together with cost-saving is obtained.
    Type: Application
    Filed: July 14, 2005
    Publication date: January 18, 2007
    Inventors: Lien-Chung Hsu, Weng-Chung Liao, Min-Hsiung Hon, Chau-Nan Hong
  • Patent number: 7063939
    Abstract: The present invention relates a method for high aspect ratio pattern transfer, by using combination of imprint and Step and Flash techniques to transfer high aspect ratio pattern. The present invention simultaneously saves the developing time and the amount of developer used during the photo-resist pattern transfer process. The present invention is able to avoid separation and dissolution between pattern and substrate that is attacked by developer, and is able to yield high aspect ratio patterns.
    Type: Grant
    Filed: February 20, 2004
    Date of Patent: June 20, 2006
    Assignee: National Cheng Kung University
    Inventors: Weng-Chung Liao, Lien-Chung Hsu, Po-I Lee, Min-Hsiung Hon, Chau-Nan Hong
  • Publication number: 20050026090
    Abstract: The present invention relates a method for high aspect ratio pattern transfer, by using combination of imprint and Step and Flash techniques to transfer high aspect ratio pattern. The present invention simultaneously saves the developing time and the amount of developer used during the photo-resist pattern transfer process. The present invention is able to avoid separation and dissolution between pattern and substrate that is attacked by developer, and is able to yield high aspect ratio patterns.
    Type: Application
    Filed: February 20, 2004
    Publication date: February 3, 2005
    Inventors: Weng-Chung Liao, Lien-Chung Hsu, Po-I Lee, Min-Hsiung Hon, Chau-Nan Hong