Abstract: The present invention relates to a system and method having the Artificial Intelligence (AI) algorithm of k-Nearest Neighbors (k-NN) as logic gates and SRAM/DRAM/non-volatile memory. One of the advantages of the system is that it utilizes a low power consumption. This is compared to few watts power consumption for existing AI platform available in the market The system of the present invention is also very efficient as it does not need CPU or GPU to do the intensive calculation, as it is fully logic design. In addition, the system of the present invention is also low in cost due to small die size as it does not require any CPU or GPU to perform the intensive computation.

Abstract: Methods and apparatus are disclosed for erasing a core memory cell using a negative gate voltage in a semiconductor memory device, wherein negative pump MOS regulation capacitors are pre-charged according to a pre-charge signal during a core cell erase operation. A negative voltage pump is then regulated using the pre-charged negative pump MOS regulation capacitors to provide the negative gate voltage. Apparatus is disclosed for pre-charging negative pump MOS regulation capacitors during a core cell erase operation in a memory device, which comprises a switch connected between a reference voltage and the negative pump MOS regulation capacitors, and a pre-charge control circuit providing a pre-charge signal to the switch to selectively connect the reference voltage to the negative pump MOS regulation capacitors for pre-charging thereof in an erase operation.

Abstract: An address sequencer is fabricated on a semiconductor substrate having flash memory cells fabricated thereon for sequencing through the flash memory cells during BIST (built-in-self-test) of the flash memory cells. The address sequencer includes an address sequencer control logic and address sequencer buffers fabricated on the semiconductor substrate. The address sequencer buffers generate a plurality of bits indicating an address of the flash memory cells. The address sequencer control logic controls the buffers to sequence through a respective sequence of bit patterns for each of a plurality of BIST modes.

Abstract: A method for erasing a flash memory. In a flash memory device having multiple sectors a plurality of sectors is selected for erase (810). a subset of sectors is selected (815) and an erase pulse is applied simultaneously to all sectors in the subset (820). After the application of an erase pulse having an initial voltage value, at least one sector of the subset is verified (825). If there is at least one unerased cell in the verified sector, the erase voltage is adjusted (830) and another erase pulse is applied to the subset of sectors (820). The adjustment of the erase voltage may be a function of the number of times that an erase pulse has been applied to the subset. This cycle is repeated on the subset until the selected sector is verified as erased. After a sector is verified, the erase/verify cycle is applied to one or more of the remaining sectors in the subset until each of the remaining sectors has been verified as erased.

Abstract: A method of implementing a reference current measurement mode within a reference array programming mode or a reference array erase mode in a semiconductor chip is disclosed. This implementation leads to significant reduction in testing time for the semiconductor chip, increasing production volume and revenues.

Abstract: In a BIST (built-in-self-test) interface, a serial shift register, fabricated on the semiconductor die having an array of core flash memory cells fabricated thereon, inputs test type data from an external test system via first IO1 and second IO2 pins, during a first state. A test type decoder, fabricated on the semiconductor die, decodes the test type data to determine whether a built-in-self-test mode is invoked by the external test system. A third portion of the serial shift register serially inputs test mode data from the external test system via the first IO1 pin, and the test mode data defines a set of desired test modes to be performed on the array of core flash memory cells. A front-end state machine, fabricated on the semiconductor die, decodes the test mode data to determine an order for performing the desired test modes.

Abstract: In a method and system for monitoring erase pulses applied on a sector of flash memory cells fabricated on a semiconductor substrate, a pulse counter and a pulse counter controller are fabricated on the semiconductor substrate. The pulse counter controller inputs a maximum number and outputs an indication of a sector fail if the flash memory cells of the sector do not pass erase verification with less than the maximum number of erase pulses applied on the sector during an erase verify BIST (Built-in-Self-Test) mode. In one example, the maximum number is a percentage of a diagonal total number of erase pulses needed to be applied on the sector until each flash memory cell at a diagonal location of the sector passes erase verification.

Abstract: A bus protocol is checked automatically during design or manufacture by connecting a bus protocol monitor to the bus and monitoring signals applied to the bus. The response to those signals is then compared with a predetermined desired response. A signal is generated to alert the protocol designer or manufacturing controller if there is an improper response that indicates that the protocol is in error. The invention is particularly useful as applied to check an LPC bus protocol.

Abstract: A wait system for a memory device is operative to provide a wait signal to delay performance of each operation relative the memory cell. The wait signal initially delays performance of at least one initial operation relative the memory cell during a given user mode by a first duration. After the initial wait signal, a subsequent wait signal is provided to delay performance of subsequent operations relative the memory cell during the given user mode by a second duration, which is less than the first duration.

Abstract: Adder circuitry is provided based on a reduced mathematical method to provide high-speed hexadecimal addition. A first adder adds the least significant binary digits of two hexadecimal numbers to provide a Digit1 and a Dot1, and a second adder adds the second least significant binary digits to provide a Digit2 plus a Dot1 as a Sum2 and a CarryA. A secondary adder adds the Dot1 and the Sum2 to provide the sum of Digit2 plus Dot2 and Dot1 as a SumA. A generator generates a Dot2 of hexadecimal “1” for certain values of the Sum2 and the CarryA, and a detector triggers an output device, which outputs a hexadecimal “0”, to output the Dot2 in response to a certain pattern of hexadcecimal numbers in the Dot1 and the Sum2. Thus, the least signifigant digit of the added hexadecimal numbers is Digit1, the second least significant digit is SumA, and the third least significant digit is the output of the output device.

Abstract: Methods and apparatus are disclosed for verifying soft programming of one or more memory cells in a memory device. The methods comprise providing a voltage source to the core cell gate, and verifying soft programming of the cell after overshoot in the regulated voltage source has settled. Also disclosed are memory devices having a logic circuit providing a regulated voltage source to the cell gate during a soft program verify operation, and a sensor to verify soft programming of the cell when a first voltage is applied to the gate from the regulated voltage source. The logic circuit provides a soft program verify signal to the sensor to verify soft programming after overshoot in the voltage source has settled.

Abstract: A wait system for a memory device is operative to provide a wait signal to delay performance of each operation relative the memory cell. The wait signal initially delays performance of at least one initial operation relative the memory cell during a given user mode by a first duration. After the initial wait signal, a subsequent wait signal is provided to delay performance of subsequent operations relative the memory cell during the given user mode by a second duration, which is less than the first duration.

Abstract: A system is provided for reducing band-to-band tunneling current during Flash memory erase operations. The system includes a memory sector divided into (N) I/O subsectors, N being an integer, and a drain pump to generate power for associated erase operations within the N I/O subsectors. An erase sequencing subsystem generates N pulses to enable the erase operations within each of the N I/O subsectors in order to reduce band-to-band tunneling current provided by the drain pump.

Abstract: A method and system are disclosed for verifying memory cell erasure, which may be employed in association with a dual bit memory cell architecture. The method includes selectively verifying proper erasure of one of a first bit of the cell and a second bit of the cell, determining that the dual bit memory cell is properly erased if the first and second bits of the cell are properly erased, and selectively erasing at least one of the first and second bits of the cell if one of the first and second bits is not properly erased. The method may also comprise selectively re-verifying proper erasure of one of the first and second bits after selectively erasing at least one of the first and second bits.