Patents by Inventor Wengwu Wang

Wengwu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110227163
    Abstract: The present invention relates to a semiconductor device. Interface layers of different thickness or different materials are used in the NMOS region and the PMOS region of the semiconductor substrate, which not only effectively reduce EOT of the device, especially EOT of the PMOS device, but also increase the electron mobility of the device, especially the electron mobility of the NMOS device, thereby effectively improving the overall performance of the device.
    Type: Application
    Filed: June 23, 2010
    Publication date: September 22, 2011
    Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
    Inventors: Wengwu Wang, Shijie Chen, Kai Han, Xiaolei Wang, Dapeng Chen