Abstract: The present disclosure provides a quantum dot light emitting diode, including: a first electrode, a second electrode, a quantum dot light emitting layer between the first electrode and the second electrode, an electron transport layer between the quantum dot light emitting layer and the first electrode, and an electron buffer layer between the electron transport layer and the quantum dot light emitting layer; wherein the electron transport layer and the electron buffer layer include a same metal oxide, and an oxygen vacancy concentration in the electron buffer layer is greater than that in the electron transport layer. The embodiment of the present disclosure also provides a manufacturing method for the quantum dot light emitting diode and a display apparatus.

Abstract: Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Abstract: A quantum dot light-emitting structure, a manufacturing method thereof and a display apparatus. The manufacturing method includes: providing quantum dot solution, the quantum dot solution including a first quantum dot which surface is modified with a first ligand and a photo-ligand remover, and the first ligand being dissolved in a rinsing solvent; coating the quantum dot solution on a base substrate to form a first quantum dot light-emitting material layer; partially exposing the first quantum dot light-emitting material layer, so that the first quantum dot light-emitting material layer includes an exposed portion and an unexposed portion, the photo-ligand remover being configured to release a ligand remover under irradiation, to remove the first ligand in the exposed portion of the first quantum dot light-emitting material layer; and developing and rinsing the exposed first quantum dot light-emitting material layer by using the rinsing solvent, to form the first quantum dot light-emitting layer.

Abstract: A display substrate, a display panel and a method for manufacturing the display substrate are provided. The display substrate comprises a backing substrate and a plurality of pixel areas formed on the backing substrate, wherein the display substrate further comprises a quantum dot layer, the quantum dot layer comprises a plurality of quantum dot units located in the plurality of pixel areas respectively, wherein the quantum dot units comprise a matrix layer and quantum dots dispersed in the matrix layer, the matrix layer comprises a central region and a peripheral region disposed around the central region, the peripheral region comprises a polymer of photocurable monomers, and the central region comprises unpolymerized photocurable monomers.

Abstract: The present application can provide a nanoparticle, a method for patterning a nanoparticle layer and a light emitting device. When the nanoparticle provided by the present application is adopted for manufacturing a light emitting layer of the light emitting device, a cross-linking reaction occurs among first ligands of adjacent nanoparticles under irradiation of ultraviolet light, and the cross-linked nanoparticles may be firmly connected to a front film layer of the light emitting layer, so that when a developing solution is adopted for developing treatment, the cross-linked nanoparticles are not insoluble in the developing solution and are retained while non-cross-linked nanoparticles are dissolved in the developing solution and are separated from the front film layer to be removed, therefore completing patterning of the nanoparticle layer.

Abstract: A light-emitting device includes: a first electrode and a second electrode that are superposed; an emitting layer (EML) located between the first electrode and the second electrode; and an electron transport layer (ETL) located between the first electrode and the EML. The ETL includes a first surface proximate to the EML and a second surface proximate to the first electrode, oxygen vacancies is formed in the ETL, and a concentration of oxygen vacancies in the ETL gradually increases from the second surface to the first surface.

Abstract: A quantum dot display substrate, a method for manufacturing a quantum dot display substrate and a display device are provided. The method includes: forming a carrier transport layer on a substrate; forming a quantum dot layer emitting light of a corresponding color in each of the pixel regions, and forming the quantum dot layer includes: forming a pattern-defining layer on the carrier transport layer, the pattern-defining layer exposes a portion of the carrier transport layer in the pixel region and covers remaining portion of the carrier transport layer, hydrophilicity and hydrophobicity of the pattern-defining layer are respectively opposite to those of the exposed portion of the carrier transport layer; coating a quantum dot solution, hydrophilicity and the hydrophobicity of the quantum dot solution are respectively the same as those of the exposed portion of the carrier transport layer; and curing the quantum dot solution.

Abstract: Disclosed are a quantum dot light emitting device, a preparation method thereof and a display apparatus. In embodiments of the present disclosure, at least one of one or more light emitting function layers is disposed to include at least two sub-function layers, each sub-function layer includes ligands, and surface energy of the ligands corresponding to the sub-function layers gradiently changes in a transmission direction of carriers in the sub-function layers, so that energy levels of the sub-function layers gradiently change. In this way, the energy levels of the sub-function layers can be matched with energy levels of the adjacent light emitting function layers.

Abstract: Disclosed are a light emitting panel, a display apparatus, and a method for manufacturing the light emitting panel. The light emitting panel includes: a substrate, at least two electrode layers arranged on one side of the substrate, a light emitting layer between the electrode layers. An interfacial modification layer is arranged on one side of at least one of the electrode layers facing the light emitting layer. The interfacial modification layer includes: a polycyclic structure, a first electriferous group connected to a side of the polycyclic structure away from the light emitting layer, a second electriferous group connected to a side of the polycyclic structure facing the light emitting layer. Charges of the first and second electriferous group are different, so that the interfacial modification layer has a dipole moment, therefore a work function of the electrode layers in contact with the interfacial modification layer is adjusted.

Abstract: The present disclosure provides a quantum dot film, a quantum dot device, and a display panel. The provided quantum dot film comprises a plurality of quantum dots and a plurality of polymer molecular chains. The polymer molecule chain comprises at least one first segment and at least one second segment, wherein the first segment has a tensile modulus greater than that of the second segment, and the second segment has a flexural modulus less than that of the first segment.

Abstract: The nanoparticle of the embodiments of the present disclosure includes nanograins, and a first ligand and a second ligand connected to a surface of each nanograin, wherein the first ligand has alkali solubility, and the second ligand undergoes a crosslinking reaction when heated.

Abstract: The present disclosure provides a polymer, a quantum dots film layer and a preparation method thereof. The polymer includes a plurality of polymerized units, and each of the polymerized units includes a hydrophobic structure and a carrier transport structure. The hydrophobic structure is linked to the carrier transport structure via a bridge bond containing a functional atom, and the hydrophobic structure is provided with a first ligand. When the polymerized unit is broken at the bridge bond, a hydrophobic monomer containing the first ligand and a carrier transport monomer containing a second ligand are generated. The second ligand includes the functional atom, and the second ligand is stronger than the first ligand in coordination activity.

Abstract: A method of patterning quantum dot layer includes: forming, on a substrate, a film layer including a photosensitive material and quantum dots with ligands on surfaces of the quantum dots; irradiating a quantum dot reserved area with light of a preset wavelength; where under irradiation with light of the preset wavelength, the photosensitive material or a product of the photosensitive material after light irradiation reacts with the ligands on the surfaces of the quantum dots, to allow the ligands to fall off from the surfaces of the quantum dots, so that solubility of the quantum dots is changed to cause the quantum dots to undergo coagulation; and removing a portion of the film layer which is not irradiated by the light of the preset wavelength, to form a patterned quantum dot portion of the quantum dot layer in the quantum dot reserved area.

Abstract: The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Abstract: A method for patterning a quantum dot layer, a method for manufacturing a display device and a transfer template are provided in embodiments of the disclosure; the method for patterning a quantum dot layer, comprising: preparing a quantum dot layer on a substrate, the quantum dot layer comprising a reserved portion and a portion to be removed; bonding the portion to be removed with a plurality of convex portions provided on a transfer template, by pressing the transfer template against the quantum dot layer; and removing the portion to be removed with a removal of the transfer template, while retaining the reserved portion on the substrate.

Abstract: Embodiments of the present disclosure provide an array substrate and a manufacturing method therefor, and a display panel. The array substrate includes: a substrate and a pixel defining layer provided on the substrate, the pixel defining layer including a plurality of opening areas, and the plurality of opening areas being provided with a plurality of quantum dot light-emitting devices in a one-to-one correspondence manner; each of the quantum dot light-emitting devices includes a quantum dot light-emitting layer, and the quantum dot light-emitting layer is made of a quantum dot material. At least one of the pixel defining layer and the quantum dot material is magnetic.

Abstract: A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.

Abstract: Disclosed are a quantum dot display panel, a manufacturing method thereof and a display device. The manufacturing method includes: forming a first functional layer on a substrate; processing the first functional layer so that the first functional layer includes a processed region and the processed region includes ions having a first polarity; forming a quantum dot layer having a second polarity in the processed region. The second polarity and the first polarity are opposite electrical polarities.

Abstract: This disclosure provides a method for quantum dots ligand exchanges and an apparatus of the same. The method includes providing a first ligand modified quantum dot, a second ligand and a first polymer. The method includes mixing the first ligand modified quantum dot, the second ligand and the first polymer in a solvent to perform the first ligand exchange, so as to obtain a second modified quantum dot. The first polymer contains a first functional group, which can have a first reaction with the first ligand, but do not react with the second ligand under the same conditions.

Abstract: A ligand includes a molecular skeleton, a first coordinating group connected to the molecular skeleton, at least one initial group connected to the molecular skeleton, and a protecting group connected to an end of each initial group away from the molecular skeleton. Each initial group is capable of forming a second coordinating group after deprotection.