Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.

Abstract: A camera structure, including a lens holder, a lens frame and a plurality of balls. The lens holder has a holder body, one end of which has a first rolling groove. The first groove wall part and the second groove wall part are disposed on two sides of the first rolling groove, and the groove bottom is disposed between the first groove wall part and the second groove wall part. The lens frame is mounted on an outer side of the holder body. The plurality of balls are located inside the first rolling groove, wherein the first groove wall part and the second groove wall part support the plurality of balls, there is a gap between each of the plurality of balls and the groove bottom, and the plurality of balls lay between the lens holder and the lens frame.

Abstract: A semiconductor device includes a device layer, a first passivation layer, an aluminum pad, a second passivation layer, an under-ball metallurgy (UBM) pad and a connector. The device layer is disposed over a substrate, wherein the device layer includes a top metal feature. The first passivation layer is disposed over the device layer. The aluminum pad penetrates through the first passivation layer and is electrically connected to the top metal feature. The second passivation layer is disposed over the aluminum pad. The UBM pad penetrates through the second passivation layer and is electrically connected to the aluminum pad. The connector is disposed over the UBM pad. In some embodiments, a first included angle between a sidewall and a bottom of the aluminum pad is greater than a second included angle between a sidewall and a bottom of the UBM pad.

Abstract: A metal grid within a trench isolation structure on the back side of an image sensor is coupled to a contact pad so that a voltage on the metal grid is continuously variable with a voltage on the contact pad. One or more conductive structures directly couple the metal grid to a contact pad. The conductive structures may bypass a front side of the image sensor. A bias voltage on the metal grid may be varied through the contact pad whereby a trade-off between reducing cross-talk and increasing quantum efficiency may be adjusted dynamically in accordance with the application of the image sensor, its environment of use, or its mode of operation.

Abstract: A pressure controlled valve for controlling the actions of a piston within a cylinder including a base, the ends thereof having their outer edges protruding outwardly to form respective seal portions which press tightly against the inner walls of an housing of the cylinder and an open end of the cylinder respectively, a T-shaped shaft with a waist portion capable of displacing axially within the base, the ends of the base further having their inner edges extending inwardly to form respective annular seal portions for pressing tightly against the shaft. The base may consist of a base body and a sleeve accommodated within the base, both of which may have their respective ends extending outwardly or inwardly to form seal portions. The waist portion of the shaft always aligns with a radial hole of the base.