Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A 3D display system and a 3D display method are provided. The 3D display system includes a 3D display, a memory, and a processor. The processor is coupled to the 3D display and the memory and is configured to execute the following steps. As a first type application program is executed, an image content of the first type application program is captured, and a stereo format image is generated according to the image content of the first type application program. The stereo format image is delivered to a runtime complying with a specific development standard through an application program interface complying with the specific development standard. A display frame processing associated with the 3D display is performed on the stereo format image through the runtime, and a 3D display image content generated by the display frame processing is provided to the 3D display for displaying.

Abstract: Various embodiments of the present disclosure are directed towards an imaging device including a first image sensor element and a second image sensor element respectively comprising a pixel unit disposed within a semiconductor substrate. The first image sensor element is adjacent to the second image sensor element. A first micro-lens overlies the first image sensor element and is laterally shifted from a center of the pixel unit of the first image sensor element by a first lens shift amount. A second micro-lens overlies the second image sensor element and is laterally shifted from a center of the pixel unit of the second image sensor element by a second lens shift amount different from the first lens shift amount.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: A package includes a first package component including a semiconductor die, wherein the semiconductor die includes conductive pads, wherein the semiconductor die is surrounded by an encapsulant; an adaptive interconnect structure on the semiconductor die, wherein the adaptive interconnect structure includes conductive lines, wherein each conductive line physically and electrically contacts a respective conductive pad; and first bond pads, wherein each first bond pad physically and electrically contacts a respective conductive line; and a second package component including an interconnect structure, wherein the interconnect structure includes second bond pads, wherein each second bond pad is directly bonded to a respective first bond pad, wherein each second bond pad is laterally offset from a corresponding conductive pad which is electrically coupled to that second bond pad.

Abstract: The disclosure provides an image sensor integrated chip and a method for forming the same. The image sensor integrated chip includes a substrate, an isolation structure, an image sensing element, a gate structure, a first dielectric layer, and a reflective layer. The substrate includes a pixel region. The isolation structure is disposed in the substrate and is configured at opposite sides of the pixel region. The image sensing element is disposed in the pixel region of the substrate. The gate structure is disposed on the pixel region of the substrate. The first dielectric layer is disposed above the pixel region of the substrate and covers sidewalls and a portion of a top surface of the gate structure. The reflective layer is disposed on the first dielectric layer. The reflective layer overlaps with the image sensing element and the portion of the top surface of the gate structure in a first direction perpendicular to a surface of the substrate.

Abstract: A manufacturing method of an image sensor including the following steps is provided. A substrate is provided. A light sensing device is formed in the substrate. A storage node is formed in the substrate. The storage node and the light sensing device are separated from each other. A buried gate structure is formed in the substrate. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. A first light shielding layer is formed on the buried gate. The first light shielding layer is located above the storage node and electrically connected to the buried gate.

Abstract: A manufacturing method of an image sensor including the following steps is provided. A substrate is provided. A light sensing device is formed in the substrate. A storage node is formed in the substrate. The storage node and the light sensing device are separated from each other. A buried gate structure is formed in the substrate. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. A first light shielding layer is formed on the buried gate. The first light shielding layer is located above the storage node and electrically connected to the buried gate.

Abstract: An image sensor including a substrate, a light sensing device, a storage node, a buried gate structure, and a first light shielding layer is provided. The light sensing device is disposed in the substrate. The storage node is disposed in the substrate. The storage node and the light sensing device are separated from each other. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. The first light shielding layer is disposed on the buried gate and is located above the storage node. The first light shielding layer is electrically connected to the buried gate.

Abstract: An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a microlens disposed over the photodiode, a first transfer transistor, a second transfer transistor and a capacitor. The first transfer transistor and the second transfer transistor are formed on the semiconductor substrate, and a memory node is formed in the semiconductor substrate between the first transfer transistor and the second transfer transistor, wherein the first transfer transistor is coupled to the photodiode. The capacitor is formed between the first transfer transistor and the second transfer transistor, and the capacitor includes a first electrode coupled to the memory node, a second electrode on the first electrode and extending to an edge of the photodiode, and a dielectric layer between the first and the second electrodes.

Abstract: An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a microlens disposed over the photodiode, a first transfer transistor, a second transfer transistor and a capacitor. The first transfer transistor and the second transfer transistor are formed on the semiconductor substrate, and a memory node is formed in the semiconductor substrate between the first transfer transistor and the second transfer transistor, wherein the first transfer transistor is coupled to the photodiode. The capacitor is formed between the first transfer transistor and the second transfer transistor, and the capacitor includes a first electrode coupled to the memory node, a second electrode on the first electrode and extending to an edge of the photodiode, and a dielectric layer between the first and the second electrodes.

Abstract: An image sensor including a substrate, a light sensing device, a storage node, a buried gate structure, and a first light shielding layer is provided. The light sensing device is disposed in the substrate. The storage node is disposed in the substrate. The storage node and the light sensing device are separated from each other. The buried gate structure includes a buried gate and a first dielectric layer. The buried gate is disposed in the substrate and covers at least a portion of the storage node. The first dielectric layer is disposed between the buried gate and the substrate. The first light shielding layer is disposed on the buried gate and is located above the storage node. The first light shielding layer is electrically connected to the buried gate.

Abstract: An optical multilayer thin-film system (11) includes a number of high refractive index layers (13), and a number of low refractive index layers (14) alternately laminated with the high refractive index layers. Each high refractive index layer has an optical thickness larger than that of each low refractive index layer. When such a multilayer thin-film system is applied to an optical element, spectral shift with respect to variation of the incident light angle is significantly reduced.

Abstract: A reflector and method for producing the same. The reflector comprises a glass substrate, an intermediate layer, consisting essentially of aluminum oxide, disposed on the substrate, a reflective silver layer disposed on the intermediate layer, and a passivation layer disposed on the silver layer.

Abstract: An apparatus for use in forming colored segments of a color filter on a substrate includes at least one pair of first and second masking plates, and a securing device for securing together the first and second masking plates and the substrate. The substrate has an outer periphery and a first surface which is adapted to be coated with the colored segments. The first masking plate overlies the first surface, and has a first outer periphery corresponding to the outer periphery of the substrate, and at least one first cutout part to expose a portion of the first surface. The second masking plate has a second outer periphery corresponding to the first outer periphery, and at least one second cutout part corresponding to the first cutout part.

Abstract: An apparatus for use in forming colored segments of a color filter on a substrate includes at least one pair of first and second masking plates, and a securing device for securing together the first and second masking plates and the substrate. The substrate has an outer periphery and a first surface which is adapted to be coated with the colored segments. The first masking plate overlies the first surface, and has a first outer periphery corresponding to the outer periphery of the substrate, and at least one first cutout part to expose a portion of the first surface. The second masking plate has a second outer periphery corresponding to the first outer periphery, and at least one second cutout part corresponding to the first cutout part.