Abstract: Semiconductor devices and methods are provided. A method according to the present disclosure includes receiving a substrate that includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; forming a plurality of fins over the third semiconductor layer; forming a trench between two of the plurality of fins; depositing a dummy material in the trench; forming a gate structure over channel regions of the plurality of the fins; forming source/drain features over source/drain regions of the plurality of the fins; bonding the substrate on a carrier wafer; removing the first and second semiconductor layers to expose the dummy material; removing the dummy material in the trench; depositing a conductive material in the trench; and bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate. The trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer.

Abstract: The present disclosure generally provides an apparatus and method for gas diffuser support structure for a vacuum chamber. The gas diffuser support structure comprises a backing plate having a central bore, and a gas deflector having a length and a width unequal to the length coupled to the backing plate by a plurality of outward fasteners coupled to a plurality of outward threaded holes formed in the backing plate, in which a spacer is disposed between the backing plate and the gas deflector, and in which a length to width ratio of the gas deflector is about 0.1:1 to about 10:1.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin having a first portion having a first width and a second portion having a second width substantially less than the first width. The first portion has a first surface, the second portion has a second surface, and the first and second surfaces are connected by a third surface. The third surface forms an angle with respect to the second surface, and the angle ranges from about 90 degrees to about 130 degrees. The structure further includes a gate electrode layer disposed over the semiconductor fin and source/drain epitaxial features disposed on the semiconductor fin on opposite sides of the gate electrode layer.

Abstract: A multi-bit flip-flop includes a first flip-flop and a second flip-flop. The first flip-flop has a first driving capability. The first flip-flop includes a first set pin configured to receive a first set signal. The second flip-flop has a second driving capability different from the first driving capability. The second flip-flop includes a second set pin configured to receive the first set signal, and the first set pin and the second set pin are coupled together. The first flip-flop and the second flip-flop are configured to share at least a first clock pin.

Abstract: A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.

Abstract: The present disclosure provides a private network and edge application provisioning management system and a method thereof, which provides a construction of enterprise private cloud platform and a process of management standardization, so that a dedicated cloud operating environment can be provided for enterprise customers, and special software application services can further be established and managed. A remote registration mechanism, an enterprise private network establishment mechanism, and an edge application activation mechanism be proposed in the present disclosure. In this way, edge computing capabilities in the enterprise private network environment can be provided, which can not only reduce application service latency time, but also network transmission does not need to go through the Internet, thus having the advantages of avoiding data leakage and improving security. The present disclosure also provides a computer-readable medium for executing the method of the present disclosure.

Abstract: An electronic paper display device includes a frame, a flexible substrate, a front panel, and a chip. The flexible substrate includes a first area, a second area, a bending area adjoining the first area and the second area, and a conductive glue disposing area. The first area and the conductive glue disposing area are located on the top surface of the frame. The flexible substrate has an L-shaped groove. When the bending area is bent through the L-shaped groove, the second area extends to the bottom surface of the frame. The front panel is located on the first area of the flexible substrate and has a conductive glue located in a non-display area. The conductive glue is located on the conductive glue disposing area of the flexible substrate. The chip is connected to the second area of the flexible substrate.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first fin structure over a base region of a semiconductor substrate. A first plurality of semiconductor channel structures stacked vertically with one another over the base region of the semiconductor substrate. A first width of the first fin structure is different from a second width of the first plurality of semiconductor channel structures. A gate structure extends from the first fin structure to the first plurality of semiconductor channel structures.

Abstract: According to an exemplary embodiment, a method of forming a vertical structure is provided. The method includes the following operations: providing a substrate; providing the vertical structure having a source, a channel, and a drain over the substrate; shrinking the source and the channel by oxidation; forming a metal layer over the drain of the vertical structure; and annealing the metal layer to form a silicide over the drain of the vertical structure.

Abstract: Semiconductor devices and methods are provided. A method according to the present disclosure includes receiving a substrate that includes a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer; forming a plurality of fins over the third semiconductor layer; forming a trench between two of the plurality of fins; depositing a dummy material in the trench; forming a gate structure over channel regions of the plurality of the fins; forming source/drain features over source/drain regions of the plurality of the fins; bonding the substrate on a carrier wafer; removing the first and second semiconductor layers to expose the dummy material; removing the dummy material in the trench; depositing a conductive material in the trench; and bonding the substrate to a silicon substrate such that the conductive material is in contact with the silicon substrate. The trench extends through the third semiconductor layer and has a bottom surface on the second semiconductor layer.

Abstract: Semiconductor structures and method for manufacturing the same are provided. The semiconductor structure includes a substrate and a first fin structure formed over the substrate. The semiconductor structure also includes an isolation structure formed around the first fin structure and a protection layer formed on the isolation structure. The semiconductor structure also includes first nanostructures formed over the first fin structure and a gate structure surrounding the first nanostructures. In addition, a bottom surface of the gate structure and the top surface of the isolation structure are separated by the protection layer.

Abstract: A semiconductor transistor device including a channel structure, gate structure, a first source/drain structure, a second source/drain structure, and a back-side source/drain contact. The gate structure overlies the channel structure. The first source/drain structure and the second source/drain structure are disposed on opposite endings of the channel structure. The back-side source/drain contact is disposed under the first source/drain structure. A line lies across the gate structure and the first source/drain structure. The line is parallel to an upper surface of the gate structure.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a semiconductor fin having a first portion having a first width and a second portion having a second width substantially less than the first width. The first portion has a first surface, the second portion has a second surface, and the first and second surfaces are connected by a third surface. The third surface forms an angle with respect to the second surface, and the angle ranges from about 90 degrees to about 130 degrees. The structure further includes a gate electrode layer disposed over the semiconductor fin and source/drain epitaxial features disposed on the semiconductor fin on opposite sides of the gate electrode layer.

Abstract: A method for billing of a parking fee includes the steps of: when it is determined that neither license plate identifier data nor time data is stored in a storage unit, that no target is contained in a current image, and that a license plate identifier is recognized in the current image, storing time at which the current image is captured and the license plate identifier in the storage unit to respectively serve as the time data and the license plate identifier data; and when it is determined that the license plate identifier data and the time data are stored, and that the license plate identifier is recognized, calculating a parking fee of the vehicle according to a parking rate, the time data, and the time at which the current image is captured.

Abstract: A method and an apparatus for classifying spoken content in a teleconference for a follower of the teleconference is disclosed. The method comprises: detecting a topic to which the spoken content belongs; determining a (overall) correlation degree between the follower and the spoken content at least according to a correlation degree between the follower and the topic; and classifying the spoken content according to the (overall) correlation degree between the follower and the spoken content. With the method and the apparatus, the correlation degree between the spoken content in the teleconference and the follower of the teleconference can be determined automatically, and the spoken content can be classified according to the correlation degree, so that the follower can selectively pay attention to some spoken contents during the teleconference, which reduces a burden of the follower and improves conference efficiency.

Abstract: A portable teeth rinsing machine includes a base and a spray gun. The base includes an air compression device to generate compressed air and a liquid compression device to generate a compressed liquid. The spray gun communicates with the air compression device and the liquid compression device, and includes an air directing passage to get the compressed air, a liquid directing passage to get the compressed liquid, a first depressing portion located in the air directing passage and triggered to output the compressed air, and a second depressing portion located in the liquid directing passage and triggered to output the compressed liquid.

Abstract: A computer program product is provided and includes a non-transitory tangible storage medium readable by a processing circuit and on which instructions are stored for execution by the processing circuit for performing a method. The method includes enabling retrieval of a keyboard pressed sequence of characters of a first type, permitting a re-selection of characters of a second type, which are associated with the keyboard pressed sequence of the characters of the first type and permitting modification of the keyboard pressed sequence of the characters of the first type to initiate a search for and retrieval of characters of the second type.

Abstract: A method and an apparatus for classifying spoken content in a teleconference for a follower of the teleconference is disclosed. The method comprises: detecting a topic to which the spoken content belongs; determining a (overall) correlation degree between the follower and the spoken content at least according to a correlation degree between the follower and the topic; and classifying the spoken content according to the (overall) correlation degree between the follower and the spoken content. With the method and the apparatus, the correlation degree between the spoken content in the teleconference and the follower of the teleconference can be determined automatically, and the spoken content can be classified according to the correlation degree, so that the follower can selectively pay attention to some spoken contents during the teleconference, which reduces a burden of the follower and improves conference efficiency.

Abstract: A computer program product is provided and includes a non-transitory tangible storage medium readable by a processing circuit and on which instructions are stored for execution by the processing circuit for performing a method. The method includes enabling retrieval of a keyboard pressed sequence of characters of a first type, permitting a re-selection of characters of a second type, which are associated with the keyboard pressed sequence of the characters of the first type and permitting modification of the keyboard pressed sequence of the characters of the first type to initiate a search for and retrieval of characters of the second type.